Nuclear Spin Dynamics of Ionized Phosphorus Donors in Silicon

We demonstrate the coherent control and electrical readout of the nuclear spins of ionized phosphorus donors in natural silicon. By combining pulsed illumination with coherent electron spin manipulation, we selectively ionize the donor depending on its nuclear spin state, exploiting a spin-dependent recombination process via a spin pair at the Si/SiO2 interface. The nuclear-spin coherence time of the ionized donor is 18 ms, two orders of magnitude longer than in the neutral donor state, rendering the ionized donor a potential resource as a quantum memory. The presented experimental techniques allow for spectroscopy of ionized-donor nuclear spins, increase the sensitivity of electrically detected electron nuclear double resonance by more than two orders of magnitude, and give experimental access to the lifetime of parallel electron spin pairs.Comment: 6 pages, 4 figure

Biotechnological aspects of sulfate reduction with methane as electron donor

Biological sulfate reduction can be used for the removal and recovery of oxidized sulfur compounds and metals from waste streams. However, the costs of conventional electron donors, like hydrogen and ethanol, limit the application possibilities. Methane from natural gas or biogas would be a more attractive electron donor. Sulfate reduction with methane as electron donor prevails in marine sediments. Recently, several authors succeeded in cultivating the responsible microorganisms in vitro. In addition, the process has been studied in bioreactors. These studies have opened up the possibility to use methane as electron donor for sulfate reduction in wastewater and gas treatment. However, the obtained growth rates of the responsible microorganisms are extremely low, which would be a major limitation for applications. Therefore, further research should focus on novel cultivation technique

Magnetic field-assisted manipulation and entanglement of Si spin qubits

Architectures of donor-electron based qubits in silicon near an oxide interface are considered theoretically. We find that the precondition for reliable logic and read-out operations, namely the individual identification of each donor-bound electron near the interface, may be accomplished by fine-tuning electric and magnetic fields, both applied perpendicularly to the interface. We argue that such magnetic fields may also be valuable in controlling two-qubit entanglement via donor electron pairs near the interface.Comment: 4 pages, 4 figures. 1 ref and 1 footnote adde

Spin-orbit coupling induced two-electron relaxation in silicon donor pairs

We unravel theoretically a key intrinsic relaxation mechanism among the low-lying singlet and triplet donor-pair states in silicon, an important element in the fast-developing field of spintronics and quantum computation. Despite the perceived weak spin-orbit coupling (SOC) in Si, we find that our discovered relaxation mechanism, combined with the electron-phonon and inter-donor interactions, dominantly drives the transitions in the two-electron states over a large range of donor coupling regime. The scaling of the relaxation rate with inter-donor exchange interaction $J$ goes from $J^5$ to $J^4$ at the low to high temperature limits. Our analytical study draws on the symmetry analysis over combined band, donor envelope and valley configurations. It uncovers naturally the dependence on the donor-alignment direction and triplet spin orientation, and especially on the dominant SOC source from donor impurities. While a magnetic field is not necessary for this relaxation, unlike in the single-donor spin relaxation, we discuss the crossover behavior with increasing Zeeman energy in order to facilitate comparison with experiments.Comment: 15 pages, 1 figure. After-publication updat

Electrical photosemiconducting and paramagnetic properties of polypyromellitimides

Semiconducting properties with dark and photoconductivity, type r, were observed in polypyromellitimides (PPMI) and explained by a donor-acceptor interreaction in the PPMI between electron acceptor promellitimide fragments and electron donor diamide in adjacent macromolecules

Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO_2 interface

We analyze the valley composition of one electron bound to a shallow donor close to a Si/barrier interface as a function of an applied electric field. A full six-valley effective mass model Hamiltonian is adopted. For low fields, the electron ground state is essentially confined at the donor. At high fields the ground state is such that the electron is drawn to the interface, leaving the donor practically ionized. Valley splitting at the interface occurs due to the valley-orbit coupling, V_vo^I = |V_vo^I| e^{i theta}. At intermediate electric fields, close to a characteristic shuttling field, the electron states may constitute hybridized states with valley compositions different from the donor and the interface ground states. The full spectrum of energy levels shows crossings and anti-crossings as the field varies. The degree of level repulsion, thus the width of the anti-crossing gap, depends on the relative valley compositions, which vary with |V_vo^I|, theta and the interface-donor distance. We focus on the valley configurations of the states involved in the donor-interface tunneling process, given by the anti-crossing of the three lowest eigenstates. A sequence of two anti-crossings takes place and the complex phase theta affects the symmetries of the eigenstates and level anti-crossing gaps. We discuss the implications of our results on the practical manipulation of donor electrons in Si nanostructures.Comment: 8 pages, including 5 figures. v2: Minor clarifying changes in the text and figures. Change of title. As published in PR

2013 REU Poster: Purification and Characterization of a Ferredoxin from Mycobacterium tuberculosis

Poster presentation at REU Summer's End Research Symposium, 2013, by REU participant Jonas A, de Oliveira, MassBay Community College - Sean Elliott group, Evan Judd lab mentorM. tuberculosis possesses a sulfite reductase (MtsirA) that is over-expressed when the bacteria is in its dormant stage of infection. MtSirA catalyzes the six-electron reduction of sulfite to sulfide. Previous kinetic studies of MtsirA have used methyl viologen (MV), a chemical reductant, as an electron donor. The goal of this work is to purify and characterize a ferredoxin from M. tuberculosis (MtFd) and determine if MtFd can act as an electron donor to mtSirA, with the ultimate goal of using it as a more physiologically relevant electron donor in kinetic studies of mtSirA. We have found that that MtFd purifies without a cluster and must be chemically reconstituted. MtFd likely contains a [4Fe-4S] cluster, and may be able to donate electrons to mtSirA.NSF-RE

Exchange in silicon-based quantum computer architecture

The silicon-based quantum computer proposal has been one of the intensely pursued ideas during the past three years. Here we calculate the donor electron exchange in silicon and germanium, and demonstrate an atomic-scale challenge for quantum computing in Si (and Ge), as the six (four) conduction band minima in Si (Ge) lead to inter-valley electronic interferences, generating strong oscillations in the exchange splitting of two-donor two-electron states. Donor positioning with atomic scale precision within the unit cell thus becomes a decisive factor in determining the strength of the exchange coupling--a fundamental ingredient for two-qubit operations in a silicon-based quantum computer.Comment: 5 pages, 2 figure