Characterization of a planar microcoil for implantable microsystems

This paper discusses the modelling, design and characterization of planar microcoils to be used in telemetry systems that supply energy to miniaturized implants. Parasitic electrical effects that may become important at a.c. frequencies of several megahertz are evaluated. The fabrication process and electrical characterization of planar receiver microcoils will be described, and it will be shown that a power of a few milliwatts is feasible.\u

Electrical Characterization of PbZr0.4Ti0.6O3 Capacitors

We have conducted a careful study of current-voltage (I-V) characteristics in fully integrated commercial PbZr0.4Ti0.6O3 thin film capacitors with Pt bottom and Ir/IrO2 top electrodes. Highly reproducible steady state I-V were obtained at various temperatures over two decades in voltage from current-time data and analyzed in terms of several common transport models including space charge limited conduction, Schottky thermionic emission under full and partial depletion and Poole-Frenkel conduction, showing that the later is the most plausible leakage mechanism in these high quality films. In addition, ferroelectric hysteresis loops and capacitance-voltage data were obtained over a large range of temperatures and discussed in terms of a modified Landau-Ginzburg-Devonshire theory accounting for space charge effects.Comment: 17 pages, 7 figure

A hybrid double-dot in silicon

We report electrical measurements of a single arsenic dopant atom in the tunnel-barrier of a silicon SET. As well as performing electrical characterization of the individual dopant, we study series electrical transport through the dopant and SET. We measure the triple points of this hybrid double dot, using simulations to support our results, and show that we can tune the electrostatic coupling between the two sub-systems.Comment: 11 pages, 6 figure

Space processing of crystalline materials: A study of known methods of electrical characterization of semiconductors: Bibliography

A selective bibliography is given on electrical characterization techniques for semiconductors. Emphasis is placed on noncontacting techniques for the standard electrical parameters for monitoring crystal growth in space, preferably in real time with high resolution

Electrical characterization Of SiGe thin films

An apparatus for measuring electrical resistivity and Hall coefficient on both thin films and bulk material over a temperature range of 300K to 1300K has been built. A unique alumina fixture, with four molybdenum probes, allows arbitrarily shaped samples, up to 2.5 cm diameter, to be measured using van der Pauw's method. The system is fully automated and is constructed with commercially available components. Measurements of the electrical properties of doped and undoped Si-Ge thin films, grown by liquid phase epitaxy reported here, are to illustrate the capabilities of the apparatus

Impact of sidewalls on electrical characterization

In this article the impact of sidewalls, formed during reactive ion etching, on the electrical behavior of thin film structures is presented. The presence of sidewalls was experimentally characterized by sheet resistance measurements on Van der Pauw structures. The effect of these sidewalls on the extraction of specific contact resistance from Cross Bridge Kelvin Resistance (CBKR) structures is discussed

Four point probe structures with buried electrodes for the electrical characterization of ultrathin conducting films

Test structures for the electrical characterization of ultrathin conductive (ALD) films are presented based on buried electrodes on which the ultrathin film is deposited.\ud This work includes test structure design and fabrication, and the electrical characterization of ALD TiN films down to 4 nm. It is shown that these structures can be used successfully to characterize sub 10 nm films.\u

Stress studies in EFG

Electrical characterization of defects induced in FZ and CZ silicon stress in four-point bending above 1200 C was started. Techniques to study electrical activity that will permit correlation of defect activity with diffusion length and with room and low temperature EBIC are being developed. Preliminary characterization of defects in ribbon grown at very low speeds of less than 1 cm/min shows that the dislocation density is very low over significant regions of cross section, while regions of high dislocation density (approx. 5 x 10(6)/cm(2)) occur in bands in a number of places. Addition measurements of stress distributions in EFG material were obtained at the University of Illinois using shadow-Moire interferometry

JAN transistor and diode characterization test program

A statistical summary of electrical characterization was performed on JAN diodes and transistors. Parameters are presented with test conditions, mean, standard deviation, lowest reading, 10% point, 90% point and highest reading