Dissipative Interaction and Anomalous Surface Absorption of Bulk Phonons at a Two-Dimensional Defect in a Solid

We predict an extreme sensitivity to the dissipative losses of the resonant interaction of bulk phonons with a 2D defect in a solid. We show that the total resonant reflection of the transverse phonon at the 2D defect, described earlier without an account for dissipation, occurs only in the limit of extremely weak dissipation and is changed into almost total transmission by relatively weak bulk absorption. Anomalous surface absorption of the transverse phonon, when one half of the incident acoustic energy is absorbed at the 2D defect, is predicted for the case of "intermediate" bulk dissipation.Comment: 11 preprint pages, no figure

Avoiding power broadening in optically detected magnetic resonance of single NV defects for enhanced DC-magnetic field sensitivity

We report a systematic study of the magnetic field sensitivity of a magnetic sensor based on a single Nitrogen-Vacancy (NV) defect in diamond, by using continuous optically detected electron spin resonance (ESR) spectroscopy. We first investigate the behavior of the ESR contrast and linewidth as a function of the microwave and optical pumping power. The experimental results are in good agreement with a simplified model of the NV defect spin dynamics, yielding to an optimized sensitivity around 2 \mu T/\sqrt{\rm Hz}. We then demonstrate an enhancement of the magnetic sensitivity by one order of magnitude by using a simple pulsed-ESR scheme. This technique is based on repetitive excitation of the NV defect with a resonant microwave \pi-pulse followed by an optimized read-out laser pulse, allowing to fully eliminate power broadening of the ESR linewidth. The achieved sensitivity is similar to the one obtained by using Ramsey-type sequences, which is the optimal magnetic field sensitivity for the detection of DC magnetic fields

Sensing electric fields using single diamond spins

The ability to sensitively detect charges under ambient conditions would be a fascinating new tool benefitting a wide range of researchers across disciplines. However, most current techniques are limited to low-temperature methods like single-electron transistors (SET), single-electron electrostatic force microscopy and scanning tunnelling microscopy. Here we open up a new quantum metrology technique demonstrating precision electric field measurement using a single nitrogen-vacancy defect centre(NV) spin in diamond. An AC electric field sensitivity reaching ~ 140V/cm/\surd Hz has been achieved. This corresponds to the electric field produced by a single elementary charge located at a distance of ~ 150 nm from our spin sensor with averaging for one second. By careful analysis of the electronic structure of the defect centre, we show how an applied magnetic field influences the electric field sensing properties. By this we demonstrate that diamond defect centre spins can be switched between electric and magnetic field sensing modes and identify suitable parameter ranges for both detector schemes. By combining magnetic and electric field sensitivity, nanoscale detection and ambient operation our study opens up new frontiers in imaging and sensing applications ranging from material science to bioimaging

THz QCL - Based active imaging applied to composite materials diagnostic

This paper presents a CW raster-scanning THz imaging setup, used to perform Non-Destructive Testing of Kevlar and carbon fibre samples. The setup uses a 2.5 THz Quantum Cascade Laser as a source. Delamination defect in a Kevlar sample was detected showing a sensitivity to laser polarization orientation. Detection of a break in a carbon/epoxy sample was also performed

Clinical survey of neurosensory side-effects of mandibular parasymphyseal bone harvesting

The aim of the present survey was to assess neurosensory disturbances and/or tooth-pulp sensitivity losses after mandibular parasymphyseal bone-harvesting procedures. Twenty-eight harvesting areas in 16 patients were surveyed. Mucosal and skin sensitivity of the chin/lower lip, divided into four regions, were determined via Pointed-Blunt and Two-Point-Discrimination Tests. Pulp sensitivity of the mandibular teeth from the left second bicuspid to the right second bicuspid was tested by cold vitality preoperatively and 12 months postoperatively. Teeth were grouped according to sensitivity alterations and distance from the harvesting defects, as measured on CT scans, and statistically significant differences sought. At 12 months, 29% of preoperatively vital cuspids overlying the harvesting defects revealed pulp-sensitivity losses; no patient reported anaesthesia or analgesia; hypoaesthesia was present in 4% (8 sites; 2 patients), hypoalgesia was present in 3% (5 sites; 2 patients) and Two-Point-Discrimination Tests yielded pathologic responses in 5% of tested areas (10 sites; 4 patients). Teeth with and without pulp sensitivity changes were statistically indistinguishable regarding distances between root apices or mental foramen and the harvesting defect. The loss of pulp sensitivity in any tooth cannot be predicted simply on the basis of the distance between its apex and the harvesting osteotomy line

Characterization of deep impurities in semiconductors by terahertz tunneling ionization

Tunneling ionization in high frequency fields as well as in static fields is suggested as a method for the characterization of deep impurities in semiconductors. It is shown that an analysis of the field and temperature dependences of the ionization probability allows to obtain defect parameters like the charge of the impurity, tunneling times, the Huang–Rhys parameter, the difference between optical and thermal binding energy, and the basic structure of the defect adiabatic potentials. Compared to static fields, high frequency electric fields in the terahertz-range offer various advantages, as they can be applied contactlessly and homogeneously even to bulk samples using the intense radiation of a high power pulsed far-infrared laser. Furthermore, impurity ionization with terahertz radiation can be detected as photoconductive signal with a very high sensitivity in a wide range of electric field strengths

Influence of compositionally induced defects on the vibrational properties of device grade Cu2ZnSnSe4 absorbers for kesterite based solar cells

This work presents a detailed analysis of the impact of compositionally induced defects on the vibrational properties of Cu2ZnSnSe4 absorbers for kesterite based solar cells. Systematic changes in the intensity of the E and B modes located around the 170, 220, and 250 cm-1 frequency regions, which involve mostly cation vibrations, were observed and analyzed in relation to the occurrence of different kinds of defect clusters involving VCu, ZnCu, ZnSn, CuZn, and SnZn point defects. Additional changes are also interpreted in terms of the appearance of SnSe, ZnSe, and CuSe-like contributions at the 185 and 250 cm-1 spectral regions, respectively. The sensitivity of the Raman measurements to the presence of these kinds of defects corroborates the potential of Raman scattering for point defect assessment in these systems. © 2015 AIP Publishing LLCPeer ReviewedPostprint (published version