Evolution of proton-induced defects in a cryogenically irradiated p-channel CCD

P-channel CCDs have been shown to display improved tolerance to radiation-induced charge transfer inefficiency (CTI) when compared to n-channel CCDs. This is attributed to the properties of the dominant charge-trapping defect species in p-channel silicon relative to the operating conditions of the CCD. However, precise knowledge of defect parameters is required in order to correct for any induced CTI. The method of single trap-pumping allows us to analyse the defect parameters to a degree of accuracy that cannot be achieved with other common defect analysis techniques such as deep-level transient spectroscopy (DLTS). We have analysed using this method the defect distribution in an e2v p-channel CCD204 irradiated with protons at cryogenic temperature (153K). The dominant charge trapping defects at these conditions have been identified as the donor level of the silicon divacancy and the carbon interstitial defect. The defect parameters are analysed both immediately post irradiation and following several subsequent room-temperature anneal phases. The evolution of the defect distribution over time and through each anneal phase provides insight into defect interactions and mobility post-irradiation. The results demonstrate the importance of cryogenic irradiation and annealing studies, with large variations seen in the defect distribution when compared to a device irradiated at room-temperature, which is the current standard procedure for radiation testing

Defect grating modes as superimposed grating states

For a symmetric grating structure with a defect, we show that a fully transmitted defect mode in the band gap can be obtained as a superposition of two steady states: an amplified and an attenuated defect state. Without scanning the whole band gap by transmission calculations, this simplifies the direct calculation of the defect wavelength as the eigenvalue in a non-standard eigenvalue problem

A local defect resonance for linear and nonlinear ultrasonic thermography

An efficient wave-defect interaction is the key to a high thermal response of flaws in ultrasonic thermography. To selectively enhance defect vibrations a concept of local defect resonance is developed and applied to ultrasonic activation of defects. The frequency match between the defect resonance frequency and the probing ultrasonic wave results in a substantial rise of a local defect temperature. The defect resonance is accompanied by depletion of the excitation frequency vibration due to nonlinear frequency conversion to higher harmonics. The local generation of higher frequency components provides a high thermal defect response in such an acoustically nonlinear thermography mode

Quantum transport properties of ultrathin silver nanowires

The quantum transport properties of the ultrathin silver nanowires are investigated. For a perfect crystalline nanowire with four atoms per unit cell, three conduction channels are found, corresponding to three $s$ bands crossing the Fermi level. One conductance channel is disrupted by a single-atom defect, either adding or removing one atom. Quantum interference effect leads to oscillation of conductance versus the inter-defect distance. In the presence of multiple-atom defect, one conduction channel remains robust at Fermi level regardless the details of defect configuration. The histogram of conductance calculated for a finite nanowire (seven atoms per cross section) with a large number of random defect configurations agrees well with recent experiment.Comment: 4 pages, 6 figure