Initial states and decoherence of histories

We study decoherence properties of arbitrarily long histories constructed from a fixed projective partition of a finite dimensional Hilbert space. We show that decoherence of such histories for all initial states that are naturally induced by the projective partition implies decoherence for arbitrary initial states. In addition we generalize the simple necessary decoherence condition [Scherer et al., Phys. Lett. A (2004)] for such histories to the case of arbitrary coarse-graining.Comment: 10 page

Decoherence in a system of many two--level atoms

I show that the decoherence in a system of $N$ degenerate two--level atoms interacting with a bosonic heat bath is for any number of atoms $N$ governed by a generalized Hamming distance (called ``decoherence metric'') between the superposed quantum states, with a time--dependent metric tensor that is specific for the heat bath.The decoherence metric allows for the complete characterization of the decoherence of all possible superpositions of many-particle states, and can be applied to minimize the over-all decoherence in a quantum memory. For qubits which are far apart, the decoherence is given by a function describing single-qubit decoherence times the standard Hamming distance. I apply the theory to cold atoms in an optical lattice interacting with black body radiation.Comment: replaced with published versio

Completely-Positive Non-Markovian Decoherence

We propose an effective Hamiltonian approach to investigate decoherence of a quantum system in a non-Markovian reservoir, naturally imposing the complete positivity on the reduced dynamics of the system. The formalism is based on the notion of an effective reservoir, i.e., certain collective degrees of freedom in the reservoir that are responsible for the decoherence. As examples for completely positive decoherence, we present three typical decoherence processes for a qubit such as dephasing, depolarizing, and amplitude-damping. The effects of the non-Markovian decoherence are compared to the Markovian decoherence.Comment: 8 pages, 1 figur

Decoherence of Flux Qubits Coupled to Electronic Circuits

On the way to solid-state quantum computing, overcoming decoherence is the central issue. In this contribution, we discuss the modeling of decoherence of a superonducting flux qubit coupled to dissipative electronic circuitry. We discuss its impact on single qubit decoherence rates and on the performance of two-qubit gates. These results can be used for designing decoherence-optimal setups.Comment: 16 pages, 5 figures, to appear in Advances in Solid State Physics, Vol. 43 (2003

Limitations of practical multi-photon decoherence-free states

It is shown in this paper that decoherence-free subspace (DFS) of practical multi-photon polarization can not avoid the exponential decoherence even in the same extra-environment if the photons are frequency-anticorrelated. The reason lies in that the condition of collective decoherence is not satisfied in this case. As an example, the evolution of biphoton's decoherence-free state is given. Possible solution for feasible multi-photon's DFS state is also given.Comment: 6 pages, no figur

All (qubit) decoherences: Complete characterization and physical implementation

We investigate decoherence channels that are modelled as a sequence of collisions of a quantum system (e.g., a qubit) with particles (e.g., qubits) of the environment. We show that collisions induce decoherence when a bi-partite interaction between the system qubit and an environment (reservoir) qubit is described by the controlled-U unitary transformation (gate). We characterize decoherence channels and in the case of a qubit we specify the most general decoherence channel and derive a corresponding master equation. Finally, we analyze entanglement that is generated during the process of decoherence between the system and its environment.Comment: 10 pages, 3 figure

Asymmetric Electron-Hole Decoherence in Ion-Gated Epitaxial Graphene

We report on asymmetric electron-hole decoherence in epitaxial graphene gated by an ionic liquid. The observed negative magnetoresistance near zero magnetic field for different gate voltages, analyzed in the framework of weak localization, gives rise to distinct electron-hole decoherence. The hole decoherence rate increases prominently with decreasing negative gate voltage while the electron decoherence rate does not exhibit any substantial gate dependence. Quantitatively, the hole decoherence rate is as large as the electron decoherence rate by a factor of two. We discuss possible microscopic origins including spin-exchange scattering consistent with our experimental observations