East Bay Coalition for the Homeless Project: Final Report

The report suggests strategies that can be incorporated into the current work flow and builds upon the current work of the EBCH. The report also presents ways in which to create a more efficient platform for completing marketing tasks, creating opportunities for awareness and knowledge of the EBCH, and increasing consideration of the EBCH as a potential donation focus

Performance of a spin-based insulated gate field effect transistor

Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin transistors use static spin-selective barriers and gate control of spin relaxation. The different origins of transistor action lead to distinct size dependences of the power dissipation in these transistors and permit sufficiently small spin-based transistors to surpass the performance of charge-based transistors at room temperature or above. This includes lower threshold voltages, smaller gate capacitances, reduced gate switching energies and smaller source-drain leakage currents.Comment: 4 pages including 3 figures, APL in pres