DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2 epitaxial films

DC superconducting quantum interference devices (dc-SQUIDs) were fabricated in Co-doped BaFe2As2 epitaxial films on (La, Sr)(Al, Ta)O3 bicrystal substrates with 30deg misorientation angles. The 18 x 8 micro-meter^2 SQUID loop with an estimated inductance of 13 pH contained two 3 micro-meter wide grain boundary junctions. The voltage-flux characteristics clearly exhibited periodic modulations with deltaV = 1.4 micro-volt at 14 K, while the intrinsic flux noise of dc-SQUIDs was 7.8 x 10^-5 fai0/Hz^1/2 above 20 Hz. The rather high flux noise is mainly attributed to the small voltage modulation depth which results from the superconductor-normal metal-superconductor junction nature of the bicrystal grain boundary

Advantageous grain boundaries in iron pnictide superconductors

High critical temperature superconductors have zero power consumption and could be used to produce ideal electric power lines. The principal obstacle in fabricating superconducting wires and tapes is grain boundaries-the misalignment of crystalline orientations at grain boundaries, which is unavoidable for polycrystals, largely deteriorates critical current density. Here, we report that High critical temperature iron pnictide superconductors have advantages over cuprates with respect to these grain boundary issues. The transport properties through well-defined bicrystal grain boundary junctions with various misorientation angles (thetaGB) were systematically investigated for cobalt-doped BaFe2As2 (BaFe2As2:Co) epitaxial films fabricated on bicrystal substrates. The critical current density through bicrystal grain boundary (JcBGB) remained high (> 1 MA/cm2) and nearly constant up to a critical angle thetac of ~9o, which is substantially larger than the thetac of ~5o for YBCO. Even at thetaGB > thetac, the decay of JcBGB was much smaller than that of YBCO.Comment: to appear in Nature Communication

TEM investigation of YBa2Cu3O7 thin films on SrTiO3 bicrystals

YBa2Cu3O7 films in c-axis orientation on bicrystalline SrTiO3 substrates are investigated by TEM. The films and the substrates are examined in cross-section and in plane view. The grain boundary of the bicrystal substrate contains (110) faceted voids, but is otherwise straight on a nanometer scale. Contrary to this, the film grain boundary is not straight grain boundary can be up to 100 nm for a 100 nm thick film. The deviation from the intended position of the YBCO grain boundary can already occur at the film/substrate interface where it can be as much as ±50 nm

Magnetotransport Properties and Subband Structure of the Two-Dimensional Electron Gas in the Inversion Layer of Hg1-xCdxTe Bicrystals

The electronic and magnetotransport properties of conduction electrons in the grain boundary interface of p-type Hg1-xCdxTe bicrystals are investigated. The results clearly demonstrate the existence of a two-dimensional degenerate n-type inversion layer in the vicinity of the grain boundary. The observed quantum oscillations of the magnetoresistivity result from a superposition of the Shubnikov-de Haas effect in several occupied electric subbands. The occupation of higher subbands is presumable depending on the total carrier density ns of the inversion layer. Electron densities, subband energies, and effective masses of these electric subbands in samples with different total densities are determined. The effective masses of lower subbands are markedly different from the band edge values of the bulk material, their values decrease with decreasing electron density and converging to the bulk values at lower densities. This agrees with predictions of the triangular potential well model and a pronounced nonparabolicity of the energy bands in Hg1-xCdxTe. At high magnetic fields (B > 10 T) it is experimentally verified that the Hall resistivity xy is quantized into integer multiplies of h/e2

Current dependence of grain boundary magnetoresistance in La_0.67Ca_0.33MnO_3 films

We prepared epitaxial ferromagnetic manganite films on bicrystal substrates by pulsed laser ablation. Their low- and high-field magnetoresistance (MR) was measured as a function of magnetic field, temperature and current. At low temperatures hysteretic changes in resistivity up to 70% due to switching of magnetic domains at the coercitive field are observed. The strongly non-ohmic behavior of the current-voltage leads to a complete suppression of the MR effect at high bias currents with the identical current dependence at low and high magnetic fields. We discuss the data in view of tunneling and mesoscale magnetic transport models and propose an explicit dependence of the spin polarization on the applied current in the grain boundary region.Comment: 5 pages, to appear in J. Appl. Phy

Left-right loading dependence of shock response of (111)//(112) Cu bicrystals: Deformation and spallation

We investigate with molecular dynamics the dynamic response of Cu bicrystals with a special asymmetric grain boundary (GB), (111)//(112)〈110〉, and its dependence on the loading directions. Shock loading is applied along the GB normal either from the left or right to the GB. Due to the structure asymmetry, the bicrystals demonstrate overall strong left-right loading dependence of its shock response, including compression wave features, compression and tensile plasticity, damage characteristics (e.g., spall strength), effective wave speeds and structure changes, except that spallation remains dominated by the GB damage regardless of the loading directions. The presence or absence of transient microtwinning also depends on the loading directions

TEM and SEM (EBIC) investigations of silicon bicrystals

The electrical and structural properties of low and medium angle tilt grain boundaries in silicon bicrystals were studied in order to obtain insight into the mechanisms determining the recombination activity. The electrical behavior of these grain boundaries was studied with the EBIC technique. Schottky barriers rather than p-n junctions were used to avoid annealing induced changes of the structure and impurity content of the as-grown crystals. Transmission electron spectroscopy reveals that the 20 deg boundary is straight, homogeneous, and free of extrinsic dislocations. It is concluded that, in the samples studied, the electrical effect of grain boundaries appears to be independent of the boundary misorientation. The dominant influence appears to be impurity segregation effects to the boundary. Cleaner bicrystals are required to study intrinsic differences in the electrical activity of the two boundaries

Deformation and spallation of shocked Cu bicrystals with Σ3 coherent and symmetric incoherent twin boundaries

We perform molecular dynamics simulations of Cu bicrystals with two important grain boundaries (GBs), Σ3 coherent twin boundaries (CTB), and symmetric incoherent twin boundaries (SITB) under planar shock wave loading. It is revealed that the shock response (deformation and spallation) of the Cu bicrystals strongly depends on the GB characteristics. At the shock compression stage, elastic shock wave can readily trigger GB plasticity at SITB but not at CTB. The SITB can induce considerable wave attenuation such as the elastic precursor decay via activating GB dislocations. For example, our simulations of a Cu multilayer structure with 53 SITBs (∼1.5-μm thick) demonstrate a ∼80% elastic shock decay. At the tension stage, spallation tends to occur at CTB but not at SITB due to the high mobility of SITB. The SITB region transforms into a threefold twin via a sequential partial dislocation slip mechanism, while CTB preserves its integrity before spallation. In addition, deformation twinning is a mechanism for inducing surface step during shock tension stage. The drastically different shock response of CTB and SITB could in principle be exploited for, or benefit, interface engineering and materials design