Effect of Composition on the Spontaneous Emission Probabilities, simulated Emission Cross Sections and Local Environment of Tm+3, in Teo2-Wo3 Glass'

Cataloged from PDF version of article.Effect of composition on the structure, spontaneous and stimulated emission probabilities of various 1.0 mol% Tm2O3 doped (1 - x)TeO2 + (x)WO3 glasses were investigated using Raman spectroscopy, ultraviolet-visible-near-infrared (UV/VIS/NIR) absorption and luminescence measurements. Absorption measurements in the UV/VIS/NIR region were used to determine spontaneous emission probabilities for the 4f-4f transitions of Tm3+ ions. Six absorption bands corresponding to the absorption of the (1)G(4), F-3(2), F-3(3) and F-3(4), H-3(5) and H-3(4) levels from the H-3(6) ground level were observed. Integrated absorption cross-section of each band except that of H-3(5) level was found to vary with the glass composition. Luminescence spectra of the samples were measured upon 457.9 nm excitation. Three emission bands centered at 476 nm ((1)G(4) --> H-3(6) transition), 651 nm ((1)G(4) --> H-3(4) transition) and 800 nm ((1)G(4) --> H-3(5) transition) were observed. Spontaneous emission cross-sections together with the luminescence spectra measured upon 457.9 nm excitation were used to determine the stimulated emission cross-sections of these emissions. The effect of glass composition on the Judd-Ofelt parameters and therefore on the spontaneous and the stimulated emission cross-sections for the metastable levels of Tm3+ ions were discussed in detail. The effect of temperature on the stimulated emission cross-sections for the emissions observed upon 457.9 nm excitation was also discussed. (C) 2002 Elsevier Science B.V. All rights reserved

Growth of Ge Nanoparticles on SiO2/Si interfaces during Annealing of Plasma Enhanced Chemical Vapor Deposited Thin Films

Cataloged from PDF version of article.Multilayer germanosilicate (Ge:SiO2) films have been grown by plasma enhanced chemical vapor deposition. Each Ge:SiO2 layer is separated by a pure SiO2 layer. The samples were heat treated at 900 degrees C for 15 and 45 min. Transmission electron microscopy investigations show precipitation of particles in the layers of highest Ge concentration. Furthermore there is evidence of diffusion between the layers. This paper focuses mainly on observed growth of Ge particles close to the interface, caused by Ge diffusion from the Ge:SiO2 layer closest to the interface through a pure SiO2 layer and to the interface. The particles grow as spheres in a direction away from the interface. Particles observed after 15 min anneal time are 4 nm in size and are amorphous, while after 45 min anneal time they are 7 nm in size and have a crystalline diamond type Ge structure. (C) 2006 Elsevier B.V. All rights reserved

Femtosecond laser crystallization of amorphous Ge

Cataloged from PDF version of article.Ultrafast crystallization of amorphous germanium (a-Ge) in ambient has been studied. Plasma enhanced chemical vapor deposition grown a-Ge was irradiated with single femtosecond laser pulses of various durations with a range of fluences from below melting to above ablation threshold. Extensive use of Raman scattering has been employed to determine post solidification features aided by scanning electron microscopy and atomic force microscopy measurements. Linewidth of the Ge optic phonon at 300 cm(-1) as a function of laser fluence provides a signature for the crystallization of a-Ge. Various crystallization regimes including nanostructures in the form of nanospheres have been identified. (C) 2011 American Institute of Physics. [doi:10.1063/1.3601356

Crystallization of Ge in SiO2 matrix by femtosecond laser processing

Cataloged from PDF version of article.Germanium nanocrystals embedded in a siliconoxide matrix has been fabricated by single femtosecond laser pulse irradiation of germanium doped SiO2 thin films deposited with plasma enhanced chemical vapor deposition. SEM and AFM are used to analyze surface modification induced by laser irradiation. Crystallization of Ge in the oxide matrix is monitored with the optic phonon at 300 cm(-1) as a function of laser fluence. Both the position the linewidth of the phonon provides clear signature for crystallization of Ge. In PL experiments, strong luminescence around 600 nm has been observed. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3677829

Gratings in polymeric waveguides

Laser-induced formation of polymer Bragg grating filters for Dense Wavelength Division Multiplexing (DWDM) applications is discussed. Acrylate monomers halogenated with both fluorine and chlorine, which possess absorption losses less than 0.25 dB/cm and wide choice of refractive indices (from 1.3 to 1.5) in the 1.5 um telecom wavelength region were used. The monomers are highly intermixable thus permitting to adjust the refractive index of the composition within ±0.0001. Moreover they are photocurable under UV exposure and exhibit high contrast in polymerization. These properties make halogenated acrylates very promising for fabricating polymeric waveguides and photonic circuits. Single-mode polymer waveguides were fabricated on silicon wafers using resistless contact lithography. Submicron index gratings have been written in polymer waveguides using holographic exposure with He-Cd laser beam (325 nm) through a phase mask. Both uniform and apodized gratings have been fabricated. The gratings are stable and are not erased by uniform UV exposure. The waveguide gratings possess narrowband reflection spectra in the 1.5 μm wavelength region of 0.4 nm width, nearly rectangular shape of the stopband and reflectivity R > 99%. The fabricated Bragg grating filters can be used for multiplexing/demultiplexing optical signals in high-speed DWDM optical fiber networks

Nanosecond Optical Transmission Studies Of Laser Annealing In Ion-implanted Silicon-on-sapphire

Time-resolved optical transmission has been studied using 633 and 514 nm CW probes on ion-implantation-amorphized silicon-on-sapphire during annealing by a 10 nsec, ⊥ J/cm2 pulse at either 532 nm or 485 nm. As recrystallization sets in the transmitted signal at 514 nm rises by ⊥ 103 in ⊥ 60 nsec and provides a measure of regrowth velocity. Beyond 200 nsec the much slower transmission rise is used to provide an estimate of the Si cooling rate. The difference in transmission observed between initially crystalline and initially amorphous Si provide an estimate of the latent heat of recrystallization of the amorphous phase. © 1983

Optical transitions of Tm3+ ions for amplifiers: How the local structure works in (1 - Ex)TeO2 + (x)M (where M = LiCl, CdCl2, WO3) glass

Optical transitions of Tm3+ ions for amplifiers was presented. Stimulated emission cross-section at the peak wavelength of the emission bands was determined. It was concluded that Tm3+ doped binary tellurite glasses are promising materials for the infrared amplifiers

The role of the interface in germanium quantum dots: when not only size matters for quantum confinement effects

Quantum confinement (QC) typically assumes a sharp interface between a nanostructure and its environment, leading to an abrupt change in the potential for confined electrons and holes. When the interface is not ideally sharp and clean, significant deviations from the QC rule appear and other parameters beyond the nanostructure size play a considerable role. In this work we elucidate the role of the interface on QC in Ge quantum dots (QDs) synthesized by rf-magnetron sputtering or plasma enhanced chemical vapor deposition (PECVD). Through a detailed electron energy loss spectroscopy (EELS) analysis we investigated the structural and chemical properties of QD interfaces. PECVD QDs exhibit a sharper interface compared to sputter ones, which also evidences a larger contribution of mixed Ge-oxide states. Such a difference strongly modifies the QC strength, as experimentally verified by light absorption spectroscopy. A large size-tuning of the optical bandgap and an increase in the oscillator strength occur when the interface is sharp. A spatially dependent effective mass (SPDEM) model is employed to account for the interface difference between Ge QDs, pointing out a larger reduction in the exciton effective mass in the sharper interface case. These results add new insights into the role of interfaces on confined systems, and open the route for reliable exploitation of QC effects. © The Royal Society of Chemistry

Light harvesting with Ge quantum dots embedded in SiO2or Si3N4

Germanium quantum dots (QDs) embedded in SiO2or in Si3N4have been studied for light harvesting purposes. SiGeO or SiGeN thin films, produced by plasma enhanced chemical vapor deposition, have been annealed up to 850°C to induce Ge QD precipitation in Si based matrices. By varying the Ge content, the QD diameter can be tuned in the 3-9 nm range in the SiO2matrix, or in the 1-2 nm range in the Si3N4matrix, as measured by transmission electron microscopy. Thus, Si3N4matrix hosts Ge QDs at higher density and more closely spaced than SiO2matrix. Raman spectroscopy revealed a higher threshold for amorphous-to-crystalline transition for Ge QDs embedded in Si3N4matrix in comparison with those in the SiO2host. Light absorption by Ge QDs is shown to be more effective in Si3N4matrix, due to the optical bandgap (0.9-1.6 eV) being lower than in SiO2matrix (1.2-2.2 eV). Significant photoresponse with a large measured internal quantum efficiency has been observed for Ge QDs in Si3N4matrix when they are used as a sensitive layer in a photodetector device. These data will be presented and discussed, opening new routes for application of Ge QDs in light harvesting devices. © 2014 AIP Publishing LLC