High-Q distributed-Bragg-grating laser cavities

Applying Bragg gratings in Al2O3 channel waveguides, we demonstrate distributed Bragg reflectors with Q-factors of 1.02x10e6. An integrated Al2O3:Yb3+ waveguide laser with 67% slope efficiency and 47 mW output power is achieved with such cavities

Single-Frequency, Narrow-Linewidth Distributed Feedback Waveguide Laser in Al2O3:Er3+ on Silicon

A distributed feedback channel waveguide laser in erbium-doped aluminum oxide on a silicon substrate is reported. The optically pumped laser has a threshold pump power of 15 mW and emits 3 mW in single-frequency operation at 1545.2 nm wavelength with a slope efficiency of 6.2% and linewidth of 15 kHz

Grated waveguide cavity for label-free protein and mechano-optical gas sensing

We demonstrate the versatility of a silicon nitride grated waveguide optical cavity as compact integrated optical sensors for (bulk) concentration detection, label-free protein sensing, and – with an integrated cantilever suspended above it – gas sensing

Optimized Deep UV Curing Process for Metal-Free Dry-Etching of Critical Integrated Optical Devices

In this paper we present results of Deep UV-curing of resist followed by thermal treatment at temperatures up to 280°C. The curing process was optimized for positive resist profiles of Fujifilm with thicknesses from 0.3 to 3.0 µm. The procedure was for the first time employed to etch critical optical structures in silicon oxynitride. Furthermore, the effect of this resist treatment on the geometry and quality of the etched profiles in silicon, silicon oxide, silicon nitride, and silicon oxynitride, having dimensions as typically applied in integrated optical devices, was studied. Channel waveguides with steep and smooth sidewalls were realized, without usage of a metal hard mask which would reduce the optical performance, at high etch selectivity (up to 6) for the materials under investigation. The reliable fabrication of various integrated optical structures with critical dimensions, like sub-micron gaps between adjacent waveguide channels, was demonstrated

Laser interferometric nanolithography using a new positive chemical amplified resist

The authors report on the progress of laser interference lithography at 266 nm laser wavelength with a chemical amplified resist containing a polyvinyl derivate dissolved in propylene glycol monoethyl ether ester. A continuous-wave deep-UV source combined with a Lloyd mirror is a simple and useful tool for the fabrication of nanoscale periodic structures generally called nanoarrays. Aiming for a robust pattern transfer technique to fabricate nanoarrays into magnetic materials, the authors investigated the utility of a chemical amplification positive tone resist, despite the relatively high theoretical resolution limit of 133 nm (λ2) pattern period for the laser source used. Taking advantage of this new type of resist, the authors demonstrated for the first time the fabrication of an 18 Gbit in.2 dot pattern on a platinum thin film. © 2007 American Vacuum Society.\ud \u