Gate Oxide Reliability and Deuterated CMOS Processing

In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. It appears as if this controversy finds its origin in the different stages (e.g. oxidation or post metal anneal) deuterium is introduced in the CMOS process. This paper investigates this in detail. The obtained results show that the hot carrier degradation only benefits from an isotope effect when deuterium is introduced in the post metal anneal. At the same time, charge to breakdown for high quality oxides does not benefit from an isotope effect, regardless of the processing stage deuterium is introduced, or the gate oxide thickness used. This is verified on two different sets of wafers fabricated in two different laboratories

The Impact of Deuterated CMOS processing on Gate Oxide Reliability

In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. In particular, the influence of deuterium incorporation on the bulk oxide quality is not clear. In this letter, deuterium or hydrogen is introduced during either the gate oxidation, postoxidation anneal, and/or the postmetal anneal (PMA). The oxide bulk degradation was evaluated using charge-to-breakdown and stress-induced leakage current; and the oxide interface degradation using hot-carrier degradation and low-frequency noise. The obtained results show that the oxide bulk does not benefit from the presence of deuterium, regardless of the stage of deuterium introduction, or the gate oxide thickness. The oxide interface is more stable only when deuterium is introduced in the PMA

Design of feedback insensitive InP ring laser

The optical isolators used to protect semiconductor lasers against optical feedback cannot be integrated. Therefore we propose to fabricate a laser that has a strongly reduced sensitivity to feedback. Simulations show that such a device can be realized by employing a ring laser in which the clockwise and counterclockwise modes are not coupled. To achieve unidirectional lasing, this work proposes to use an intra cavity weak optical isolator based on two phase modulators that are driven 90 degrees out of phase. Simulations show up to 3% of intensity feedback can be tolerated without any distinguishable effect on the laser light