2,124 research outputs found

    A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots

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    We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.Comment: Related papers at http://pettagroup.princeton.ed

    Scalable gate architecture for densely packed semiconductor spin qubits

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    We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array and 3 single quantum dot charge sensors. We show reproducible single quantum dot charging and orbital energies, with standard deviations less than 20% relative to the mean across the 9 dot array. The single quantum dot charge sensors have a charge sensitivity of 8.2 x 10^{-4} e/root(Hz) and allow the investigation of real-time charge dynamics. As a demonstration of the versatility of this device, we use single-shot readout to measure a spin relaxation time T1 = 170 ms at a magnetic field B = 1 T. By reconfiguring the device, we form two capacitively coupled double quantum dots and extract a mutual charging energy of 200 microeV, which indicates that 50 GHz two-qubit gate operation speeds are feasible

    A Coherent Spin-Photon Interface in Silicon

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    Electron spins in silicon quantum dots are attractive systems for quantum computing due to their long coherence times and the promise of rapid scaling using semiconductor fabrication techniques. While nearest neighbor exchange coupling of two spins has been demonstrated, the interaction of spins via microwave frequency photons could enable long distance spin-spin coupling and "all-to-all" qubit connectivity. Here we demonstrate strong-coupling between a single spin in silicon and a microwave frequency photon with spin-photon coupling rates g_s/(2\pi) > 10 MHz. The mechanism enabling coherent spin-photon interactions is based on spin-charge hybridization in the presence of a magnetic field gradient. In addition to spin-photon coupling, we demonstrate coherent control of a single spin in the device and quantum non-demolition spin state readout using cavity photons. These results open a direct path toward entangling single spins using microwave frequency photons

    Investigation of Mobility Limiting Mechanisms in Undoped Si/SiGe Heterostructures

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    We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms in this increasingly important materials system. By analyzing data from 26 wafers with different heterostructure growth profiles we observe a strong correlation between the background oxygen concentration in the Si quantum well and the maximum mobility. The highest quality wafer supports a 2DEG with a mobility of 160,000 cm^2/Vs at a density 2.17 x 10^11/cm^2 and exhibits a metal-to-insulator transition at a critical density 0.46 x 10^11/cm^2. We extract a valley splitting of approximately 150 microeV at a magnetic field of 1.8 T. These results provide evidence that undoped Si/SiGe heterostructures are suitable for the fabrication of few-electron quantum dots.Comment: Related papers at http://pettagroup.princeton.ed

    Screening nuclear field fluctuations in quantum dots for indistinguishable photon generation

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    A semiconductor quantum dot can generate highly coherent and indistinguishable single photons. However, intrinsic semiconductor dephasing mechanisms can reduce the visibility of two-photon interference. For an electron in a quantum dot, a fundamental dephasing process is the hyperfine interaction with the nuclear spin bath. Here we directly probe the consequence of the fluctuating nuclear spins on the elastic and inelastic scattered photon spectra from a resident electron in a single dot. We find the nuclear spin fluctuations lead to detuned Raman scattered photons which are distinguishable from both the elastic and incoherent components of the resonance fluorescence. This significantly reduces two-photon interference visibility. However, we demonstrate successful screening of the nuclear spin noise which enables the generation of coherent single photons that exhibit high visibility two-photon interference.Comment: 5 pages, 4 figures + Supplementary Informatio

    Time Evolution of the Radial Perturbations and Linear Stability of Solitons and Black Holes in a Generalized Skyrme Model

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    We study the time evolution of the radial perturbation for self-gravitating soliton and black-hole solutions in a generalized Skyrme model in which a dilaton is present. The background solutions were obtained recently by some of the authors. For both the solitons and the black holes two branches of solutions exist which merge at some critical value of the corresponding parameter. The results show that, similar to the case without a scalar field, one of the branches is stable against radial perturbations and the other is unstable. The conclusions for the linear stability of the black holes in the generalized Skyrme model are also in agreement with the results from the thermodynamical stability analysis based on the turning point method.Comment: 18 pages, 12 figures; v2: typos corrected, comments adde
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