166 research outputs found

    Fourier phase and pitch-class sum

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    Music theorists have proposed two very different geometric models of musical objects, one based on voice leading and the other based on the Fourier transform. On the surface these models are completely different, but they converge in special cases, including many geometries that are of particular analytical interest.Accepted manuscrip

    Monolithic integration of an injection laser and a metal semiconductor field effect transistor

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    A new laser structure, the "T-laser", has been monolithically integrated with a MESFET on a semi-insulating GaAs substrate. Integration is achieved by means of a compatible structure in which the optically active layer of the laser also serves as the electrically active layer of the MESFET. Direct modulation of the laser by means of the transistor is demonstrated

    Be-implanted (GaAl)As stripe geometry lasers

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    GaAl)As double-heterostructure stripe geometry lasers have been fabricated using Be ion implantation. Pulsed threshold currents as low as 21 mA have been found. The light-vs-current characteristics were kink-free up to 10 mW output power and the measured differential quantum efficiency was 45%

    A monolithically integrated optical repeater

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    A monolithically integrated optical repeater has been fabricated on a single-crystal semi-insulating GaAs substrate. The repeater consists of an optical detector, an electronic amplifier, and a double heterostructure crowding effect laser. The repeater makes use of three metal semiconductor field effect transistors, one of which is used as the optical detector. With light from an external GaAlAs laser incident on the detector, an overall optical power gain of 10 dB from both laser facets was obtained

    Low threshold Be implanted (GaAl)As laser on semi-insulating substrate

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    Be implanted stripe geometry double heterostructure lasers have been fabricated on a semi-insulating GaAs substrate, with threshold currents as low as 15 mA for a cavity length of 100 μm. The laser has been monolithically integrated with a metal-semiconductor field-effect transistor

    Low threshold Be implanted (GaAl)As laser on semi-insulating substrate

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