Electron irradiation effects in electrostrictive P(VDF-TrFE) copolymers

2000-2001 > Academic research: refereed > Refereed conference paperVersion of RecordPublishe

Magneto-optical characteristics of magnetic nanowire arrays in anodic aluminium oxide templates

Nanocomposite films consisting of regularly ordered iron nanowires embedded in anodic aluminum oxide templates have been fabricated and their magneto-optical properties studied by determining the four Stokes parameters of the transmitted laser beam (λ=670 nm), originally linearly polarized and at normal incidence to the film surfaces. The results of the nanowire arrays are found to be considerably different from that of bulk iron. While an increase in diameter of the nanowire leads to a substantial increase in the values of the Faraday rotation angles per unit length at a fixed value of the magnetic fields, they are substantially less than that of bulk iron, indicating that the effective media theory may not be directly applicable

Electrical conduction in annealed semi-insulating InP

Variable-temperature current-voltage has been used to study the conduction properties of Fe-doped semi-insulating (SI) InP in the as-grown and annealed states. It is found that the trap-filling (TF) process disappears gradually with lengthening of annealing time. This phenomenon is explained by the decrease of the concentration of the empty Fe deep level (Fe 3+) that is caused by the thermally induced donor defect formation. The TF process cannot be observed in annealed undoped and long-time annealed Fe-doped SI InP material. The breakdown field of annealed undoped and Fe-doped SI InP is much lower than that of as-grown Fe-doped InP material. The breakdown field decreases with decreasing of temperature indicating an impact ionization process. This breakdown behavior is also in agreement with the fact that the concentration of the empty deep level in annealed InP is lowered. © 2000 American Institute of Physics.published_or_final_versio

Effect of atomic ordering on hydrogen dissociation on Ni₃Fe surfaces

2008-2009 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Effects of annealing on the electrical properties of Fe-doped InP

The electrical properties of Fe-doped semi-insulating (SI) InP were investigated before and after annealing. The annealing conditions were controlled by changing either the temperature or duration. Correlation between the change of electrical parameters with the change of defect concentration at different annealing stage was observed. The defects and the change of the concentrations in Fe-doped SI InP were detected by room-temperature photocurrent spectroscopy.published_or_final_versio

MicroRNA 744-3p promotes MMP-9-mediated metastasis by simultaneously suppressing PDCD4 and PTEN in laryngeal squamous cell carcinoma

MicroRNA controls cancer invasion by governing the expression of gene regulating migration and invasion. Here, we reported a novel regulatory pathway controlled by miR-744-3p, which enhanced expression of matrix metallopeptidase 9 (MMP-9) in laryngeal squamous cell carcinoma (LSCC). We profiled the differential micoRNA expression pattern in LSCC cell lines and normal epithelial cultures derived from the head and neck mucosa using microRNA microarray. MiR-7-1-3p, miR-196a/b and miR-744-3p were expressed differentially in the LSCC cell lines. Subsequent validation using real-time PCR revealed that high miR-744-3p level was positively correlated with regional lymph node metastasis of LSCC. Real-time cellular kinetic analysis showed that suppressing miR-744-3p could inhibit migration and invasion of LSCC cell lines and reduce the number of lung metastatic nodules in nude mice modules. In silico analysis revealed that miR-744-3p targeted 2 distinct signaling cascades which eventually upregulated MMP-9 expression in LSCC. First, miR-744-3p could suppress programmed cell death 4 (PDCD4), a direct suppressor of NF-κB (p65). PDCD4 could also prevent AKT activation and suppress MMP-9 expression. Further, suppressing miR-744-3p expression could restore phosphatase and tensin homolog (PTEN) expression. PTEN could inhibit AKT activation and inhibit MMP-9 expression in LSCC cells. The results revealed that suppressing miR-744-3p was effective to inhibit LSCC metastasis by inactivating AKT/mTOR and NF-κB (p65) signaling cascade. Targeting miR-744-3p could be a valuable therapeutic intervention to suppress the aggressiveness of LSCC.published_or_final_versio

Positron-lifetime study of compensation defects in undoped semi-insulating InP

Positron-lifetime and infrared-absorption spectroscopies have been used to investigate the compensation defects that render undoped n-type liquid encapsulated Czochralski-grown InP semi-insulating under high-temperature annealing. The positron measurements, carried out over the temperature range of 25-300 K, reveal in the as-grown material a positron lifetime of 282±5 ps which we associate with either the isolated indium vacancy V 3- In or related hydrogen complexes. The shallow donor complex V InH 4, responsible for much of the n-type conductivity and the strong infrared absorption signal at 4320 nm, is ruled out as a significant trapping site on the grounds that its neutral state is present at too low a concentration. After annealing at 950°C, in conjunction with the disappearance of the V InH 4 infrared-absorption signal, trapping into V In-related centers is observed to increase slightly, and an additional positron trapping defect having a lifetime of 330 ps appears at a concentration of ∼10 16 cm -3, indicating divacancy trapping. These results support the recent suggestion that the V InH 4 complex present in as-grown InP dissociates during annealing, forming V InH (3-n)- n (0≤n≤3) complexes and that the recombination of V In with a phosphorus atom results in the formation of EL2-like deep donor P In antisite defect, which compensates the material. It is suggested that the divacancy formed on annealing is V InV P, and that this defect is probably a by-product of the P In antisite formation.published_or_final_versio

Creation and suppression of point defects through a kick-out substitution process of Fe in InP

Indium antisite defect In P-related photoluminescence has been observed in Fe-diffused semi-insulating (SI) InP. Compared to annealed undoped or Fe-predoped SI InP, there are fewer defects in SI InP obtained by long-duration, high-temperature Fe diffusion. The suppression of the formation of point defects in Fe-diffused SI InP can be explained in terms of the complete occupation by Fe at indium vacancy. The In P defect is enhanced by the indium interstitial that is caused by the kick out of In and the substitution at the indium site of Fe in the diffusion process. Through these Fe-diffusion results, the nature of the defects in annealed undoped SI InP is better understood. © 2002 American Institute of Physics.published_or_final_versio

Electrical and FT-IR measurements of undoped N-type INP materials grown from various stoichiometric melts

P-rich, In-rich and Stoichiometric undoped InP melts have been synthesed by phosphorus in-situ injection method. InP crystal ingots have been grown from these melts by Liquid Encapsulated Czochralski (LEC). Samples from these ingots grown from various Stoichiometric melts have been characterized by Hall Effect and Fourier Transform Infrared (FT-IR) spectroscopy measurements respectively. The Hall Effect measurement results indicate that the net carrier concentration of P-inch undoped InP is higher than that of In-rich and Stoichiometric undoped InP materials. FT-IR spectroscopy measurements reveal that there are intensive absorption peaks which have been proved to be hydrogen related indium vacancy complex V InH 4. By comparing FT-IR spectra, it is found that P-rich InP material has the most intensive absorption peak of V InH 4, while In-rich InP material has the weakest absorption peak.published_or_final_versio

Thermally induced conduction type conversion in n-type InP

n-type semiconducting InP is changed into p-type semiconducting by short time annealing at 700 °C. Further annealing for a longer time leads to a second conduction-type conversion changing the material back to n type again but with a much higher resistivity. These conduction conversions indicate the formation of both acceptor and donor defects and the progressive variation of their relative concentrations during annealing. © 1999 American Institute of Physics.published_or_final_versio