Table 1. Typical performance RF performance at Tcase = 25 �C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp �D ACPR885k ACPR1980k

[1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8- 13). PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz. [2] Measured within 30 kHz bandwidth. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefit

Table 1. Typical performance

50 W LDMOS power transistor for base station applications at frequencies fro

Table 1. Typical performance

100 W LDMOS power transistor for base station applications at frequencies fro

Table 1. Typical performance Typical RF performance at Tcase =25°C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ηD ACPR885k ACPR1980k ACPR5M ACPR10M

1-carrier W-CDMA [1] 2500to2700 28 14 17 23-- −41 −60 1-carrier N-CDMA [2] 2500to2700 28 14 17 23 −50 [3] −65 [3]--[1] Signal is a one carrier, TM1 W-CDMA signal with 64 DPCH and 100 % clipping. PAR is 9.65 dB at 0.01 % probability on CCDF. [2] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. [3] Measured within 30 kHz bandwidth. 1.2 Features and benefits Typical 1-carrier W-CDMA performance (single carrier W-CDMA TM1 with 64 DPCH and 100 % clipping; PAR = 9.65 dB at 0.01 % probability on the CCDF; channe