Development of Standards for Characterization of Cathodoluminescence Efficiency

Cathodolurninescence (CL) characterization in a demountable vacuum chamber is an important benchmarking tool for flat-panel display phosphors and screens. The proper way to perform these measurements is to minimize the effects of secondary electrons, excite the phosphor/screen with a uniform beam profile, and maintain a clean vacuum environment. CL measurements are important for preliminary evaluation and lifetesting of phosphor powders and screens prior to incorporation into the FPD. A survey of many CL characterization systems currently in use revealed the myriad of spectroradiometers, colorimeters, electron guns, vacuum pumps, mass spectrometers, etc. that introduce many avenues for error that are often difficult to isolate. A preliminary round-robin experiment was coordinated by Sandia and invoIved five other research groups. The purpose of this experiment was to obtain an indication of equipment capabilities and instrument variations, as well as reliability and consistency of results. Each group was asked to measure the luminence (cd/m{sup 2}) and chromaticity coordinates of a Y{sub 3}Al{sub 2}Ga{sub 3}O{sub 12}: Tb pellet and calculate the luminous efficiency. Pellets were chosen in order to reduce errors associated with processing and handling of powders or screens. Some of the data reported in this experiment were in good agreement while others differed significantly. Determining sources of error in CL measurements is an ongoing effort. By performing this experiment, we were able to identify some of the causes of error and develop a characterization protocol for display phosphors

Novel thin film field emission electron source laboratory directed research and development final report

The objective of this project was to demonstrate proof of concept of a thin film field emission electron source based on electron tunneling between discrete metal islands on an insulating substrate. An electron source of this type should be more easily fabricated permitting the use of a wider range of materials, and be less prone to damage and erratic behavior than the patterned field emitter arrays currently under development for flat panel displays and other vacuum microelectronic applications. This report describes the results of the studies of electron and light emission from such structures, and the subsequent discovery of a source of light emission from conductive paths across thin insulating gaps of the semiconductor-insulator-semiconductor (SIS) and metal-insulator-semiconductor (MIS) structures. The substrates consisted of silicon nitride and silicon dioxide on silicon wafers, Kapton{reg_sign}, quartz, and cut slabs of silica aerogels. The conductive film samples were prepared by chemical vapor deposition (CVD) and sputtering, while the MIS and SIS samples were prepared by CVD followed by cleaving, grinding, mechanical indentation, erosion by a sputter Auger beam, electrical arcing and chemical etching. Electron emission measurements were conducted in high and ultra high vacuum systems at SNL, NM as well as at SNL, CA. Optical emission measurements were made in air under an optical microscope as well as in the above vacuum environments. Sample morphology was investigated using both scanning electron microscopy (SEM) and transmission electron microscopy (TEM)

Antiferromagnetic Domains and Superconductivity in UPt3

We explore the response of an unconventional superconductor to spatially inhomogeneous antiferromagnetism (SIAFM). Symmetry allows the superconducting order parameter in the E-representation models for UPt3 to couple directly to the AFM order parameter. The Ginzburg-Landau equations for coupled superconductivity and SIAFM are solved numerically for two possible SIAFM configurations: (I) abutting antiferromagnetic domains of uniform size, and (II) quenched random disorder of `nanodomains' in a uniform AFM background. We discuss the contributions to the free energy, specific heat, and order parameter for these models. Neither model provides a satisfactory account of experiment, but results from the two models differ significantly. Our results demonstrate that the response of an E_{2u} superconductor to SIAFM is strongly dependent on the spatial dependence of AFM order; no conclusion can be drawn regarding the compatibility of E_{2u} superconductivity with UPt3 that is independent of assumptions on the spatial dependence of AFMComment: 12 pages, 13 figures, to appear in Phys. Rev.

Emissive flat panel displays: A challenge to the AMLCD

According to some sources, flat panel displays (FPDS) for computers will represent a $20-40B industry by the end of the decade and could leverage up to$100-200B in computer sales. Control of the flat panel display industry could be a significant factor in the global economy if FPDs manage to tap into the enormous audio/visual consumer market. Japan presently leads the world in active matrix liquid crystal display (AMLCD) manufacturing, the current leading FPD technology. The AMLCD is basically a light shutter which does not emit light on its own, but modulates the intensity of a separate backlight. However, other technologies, based on light emitting phosphors, could eventually challenge the @CD`s lead position. These light-emissive technologies do not have the size, temperature and viewing angle limitations of AMLCDS. In addition, they could also be less expensive to manufacture, and require a smaller capital outlay for a manufacturing plant. An overview of these alternative technologies is presented

LPCVD tungsten deposition on Si-Ge alloy

The Radioisotope Thermoelectric Generator (RTG) consists of a heat source, an 80/20 Si-Ge thermopile, MIN-K insulation, and a stainless steel container. The dc diode sputtered tungsten bridges interconnect alternate wafers in the thermopile. The diffusion of silicon into the tungsten interconnects appears to be the cause of a sudden increase in contact resistance after a period of time. The low pressure chemical vapor deposition (LPCVD) technique is compared with sputtering for this reason. LPCVD is found to be simpler than sputtering, self-cleaning, and not prone to damage the surface as does sputtering. Aging profiles are found to tend toward the high end of the acceptance window. (LEW

Garnet phosphors prepared via hydrothermal synthesis

This project studied hydrothermal synthesis as a route to producing green-emitting cathodoluminescent phosphorus isostructural with yttrium aluminum garnet (Y{sub 3}Al{sub 5}O{sub 12}, or YAG). Aqueous precipitation of Y, Gd, Al, Ga, and Tb salts produced amorphous gels, which were heated with water at 600 C and 3,200 bar to produce crystalline YAG:Tb, Y{sub 3}Ga{sub 5}O{sub 12}:Tb, Y{sub 3}Al{sub 3}Ga{sub 2}O{sub 12}:Tb, and Gd{sub 3}Ga{sub 5}O{sub 12}:Tb powders. Process parameters were identified that yielded submicron YAG:Tb and Y{sub 3}Ga{sub 5}O{sub 12}:Tb powders without grinding. Cathodoluminescent efficiencies were measured as functions of power density at 600 V, using both the hydrothermal garnets and identical phosphor compositions synthesized at high temperatures. Saturation behavior was independent of synthetic technique, however, the hydrothermal phosphorus were less susceptible to damage (irreversible efficiency loss) at very high power densities (up to 0.1 W/cm{sup 2}). The fine grain sizes available with hydrothermal synthesis make it an attractive method for preparing garnet phosphorus for field emission, projection, and head-up displays

Phosphors for flat panel emissive displays

An overview of emissive display technologies is presented. Display types briefly described include: cathode ray tubes (CRTs), field emission displays (FEDs), electroluminescent displays (ELDs), and plasma display panels (PDPs). The critical role of phosphors in further development of the latter three flat panel emissive display technologies is outlined. The need for stable, efficient red, green, and blue phosphors for RGB fall color displays is emphasized

Low-pressure ion source

A low pressure ion source for a neutron source comprises a filament cathode and an anode ring. Approximately 150V is applied between the cathode and the anode. Other electrodes, including a heat shield, a reflector and an aperture plate with a focus electrode, are placed at intermediate potentials. Electrons from the filament drawn out by the plasma and eventually removed by the anode are contained in a magnetic field created by a magnet ring. Ions are formed by electron impact with deuterium or tritium and are extracted at the aperture in the focus electrode. The ion source will typically generate a 200 mA beam through a 1.25 cm/sup 2/ aperture for an arc current of 10A. For deuterium gas, the ion beam is over 50 percent D/sup +/ with less than 1% impurity. The current density profile across the aperture will typically be uniform to within 20%

D-T neutron generator development for cancer therapy. 1980 annual progress report

This report summarizes the work completed during the first year of a two-year grant by NCI/HEW to investigate the feasibility of developing a D-T neutron generator for use in cancer therapy. Experiments have continued on the Target Test Facility (TTF) developed during a previous grant to investigate high-temperature metal hydrides for use as target materials. The high voltage reliability of the TTF has been improved so that 200 kV, 200 mA operation is now routine. In recent target tests, the D-D neutron production rate was measured to be > 1 x 10/sup 11//s, a rate that corresponds to a D-T neutron production rate of > 1 x 10/sup 13//s - the desired rate for use in cancer therapy. Deuterium concentration depth profiles in the target, measured during intense ion beam bombardment, show that deuterium is depleted near the surface of the target due to impurities implanted by the ion beam. Recent modifications of the duopigatron ion source to reduce secondary electron damage to the electrodes also improved the ion source efficiency by about 40%. An ultra high vacuum version of the TTF is now being constructed to determine if improved vacuum conditions will reduce ion source impurities to a sufficiently low level that the deuterium near the surface of the target is not depleted. Testing will begin in June 1980