Generation of spin currents and spin densities in systems with reduced symmetry

We show that the spin-current response of a semiconductor crystal to an external electric field is considerably more complex than previously assumed. While in systems of high symmetry only the spin-Hall components are allowed, in systems of lower symmetry other non-spin-Hall components may be present. We argue that, when spin-orbit interactions are present only in the band structure, the distinction between intrinsic and extrinsic contributions to the spin current is not useful. We show that the generation of spin currents and that of spin densities in an electric field are closely related, and that our general theory provides a systematic way to distinguish between them in experiment. We discuss also the meaning of vertex corrections in systems with spin-orbit interactions.Comment: 4 page

Spin orientation of a two-dimensional electron gas by a high-frequency electric field

Coupling of spin states and space motion of conduction electrons due to spin-orbit interaction opens up possibilities for manipulation of the electron spins by electrical means. It is shown here that spin orientation of a two-dimensional electron gas can be achieved by excitation of the carriers with a linearly polarized high-frequency electric field. In (001)-grown quantum well structures excitation with in-plane ac electric field induces orientation of the electron spins along the quantum well normal, with the spin sign and the magnitude depending on the field polarization.Comment: 5 pages, 1 figur

Surface Analysis of OFE-Copper X-Band Accelerating Structures and Possible Correlation to RF Breakdown Events

X-band accelerator structures meeting the Next Linear Collider (NLC) design requirements have been found to suffer vacuum surface damage caused by radio frequency (RF) breakdown, when processed to high electric-field gradients. Improved understanding of these breakdown events is desirable for the development of structure designs, fabrication procedures, and processing techniques that minimize structure damage. RF reflected wave analysis and acoustic sensor pickup have provided breakdowns localization in RF structures. Particle contaminations found following clean autopsy of four RF-processed travelling wave structures, have been catalogued and analyzed. Their influence on RF breakdown, as well as that of several other material-based properties, will be discussed.Comment: 21 pages, 8 figures, 4 tables, Submitted to JVST A as a proceeding of the 50th AVS conference (Baltimore, MD, 2-7 Nov 2003

On the nature of steady states of spin distributions in the presence of spin-orbit interactions

In the presence of spin-orbit interactions, the steady state established for spin distributions in an electric field is qualitatively different from the steady state for charge distributions. This is primarily because the steady state established for spin distributions involves spin precession due to spin-orbit coupling. We demonstrate in this work that the spin density matrix in an external electric field acquires two corrections with different dependencies on the characteristic momentum scattering time. One part is associated with conserved spins, diverges in the clean limit and is responsible for the establishment of a steady-state spin density in electric fields. Another part is associated with precessing spins, is finite in the clean limit and is responsible for the establishment of spin currents in electric fields. Scattering between these distributions has important consequences for spin dynamics and spin-related effects in general, and explains some recent puzzling observations, which are captured by our unified theory.Comment: 10 pages, 1 figur

Origin of magnetoelectric behavior in BiFeO3_3

The magnetoelectric behavior of BiFeO$_3$ has been explored on the basis of accurate density functional calculations. The structural, electronic, magnetic, and ferroelectric properties of BiFeO$_3$ are predicted correctly without including strong correlation effect in the calculation. Moreover, the experimentally-observed elongation of cubic perovskite-like lattice along the [111] direction is correctly reproduced. At high pressure we predicted a pressure-induced structural transition and the total energy calculations at expanded lattice show two lower energy ferroelectric phases, closer in energy to the ground state phase. Band-structure calculations show that BiFeO$_3$ will be an insulator in A- and G-type antiferromagnetic phases and a metal in other magnetic configurations. Chemical bonding in BiFeO$_3$ has been analyzed using various tools and electron localization function analysis shows that stereochemically active lone-pair electrons at the Bi sites are responsible for displacements of the Bi atoms from the centro-symmetric to the noncentrosymmetric structure and hence the ferroelectricity. A large ferroelectric polarization (88.7 $\mu$C/cm$^{2}$) is predicted in accordance with recent experimental findings. The net polarization is found to mainly ($>$ 98%) originate from Bi atoms. Moreover the large scatter in experimentally reported polarization values is due to the large anisotropy in the spontaneous polarization.Comment: 19 pages, 12 figures, 4 table

Electric-field switchable magnetization via the Dzyaloshinskii-Moriya interaction: FeTiO_3 versus BiFeO_3

In this article we review and discuss a mechanism for coupling between electric polarization and magnetization that can ultimately lead to electric-field switchable magnetization. The basic idea is that a ferroelectric distortion in an antiferromagnetic material can "switch on" the Dzyaloshinskii-Moriya interaction which leads to a canting of the antiferromagnetic sublattice magnetizations, and thus to a net magnetization. This magnetization M is coupled to the polarization P via a trilinear free energy contribution of the form P(M x L), where L is the antiferromagnetic order parameter. In particular, we discuss why such an invariant is present in R3c FeTiO_3 but not in the isostructural multiferroic BiFeO_3. Finally, we construct symmetry groups that in general allow for this kind of ferroelectrically-induced weak ferromagnetism.Comment: 15 pages, 3 images, to appear in J. Phys: Condens. Matter Focus Issue on Multiferroic

Principals of the theory of light reflection and absorption by low-dimensional semiconductor objects in quantizing magnetic fields at monochromatic and pulse excitations

The bases of the theory of light reflection and absorption by low-dimensional semiconductor objects (quantum wells, wires and dots) at both monochromatic and pulse irradiations and at any form of light pulses are developed. The semiconductor object may be placed in a stationary quantizing magnetic field. As an example the case of normal light incidence on a quantum well surface is considered. The width of the quantum well may be comparable to the light wave length and number of energy levels of electronic excitations is arbitrary. For Fourier-components of electric fields the integral equation (similar to the Dyson-equation) and solutions of this equation for some individual cases are obtained.Comment: 14 page

Influence of Anomalous Dispersion on Optical Characteristics of Quantum Wells

Frequency dependencies of optical characteristics (reflection, transmission and absorption of light) of a quantum well are investigated in a vicinity of interband resonant transitions in a case of two closely located excited energy levels. A wide quantum well in a quantizing magnetic field directed normally to the quantum-well plane, and monochromatic stimulating light are considered. Distinctions between refraction coefficients of barriers and quantum well, and a spatial dispersion of the light wave are taken into account. It is shown that at large radiative lifetimes of excited states in comparison with nonradiative lifetimes, the frequency dependence of the light reflection coefficient in the vicinity of resonant interband transitions is defined basically by a curve, similar to the curve of the anomalous dispersion of the refraction coefficient. The contribution of this curve weakens at alignment of radiative and nonradiative times, it is practically imperceptible at opposite ratio of lifetimes . It is shown also that the frequency dependencies similar to the anomalous dispersion do not arise in transmission and absorption coefficients.Comment: 10 pages, 6 figure

Rolled-Up Nanotech: Illumination-Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers

<p>Abstract</p> <p>The effect of illumination on the hydrofluoric acid etching of AlAs sacrificial layers with systematically varied thicknesses in order to release and roll up InGaAs/GaAs bilayers was studied. For thicknesses of AlAs below 10 nm, there were two etching regimes for the area under illumination: one at low illumination intensities, in which the etching and releasing proceeds as expected and one at higher intensities in which the etching and any releasing are completely suppressed. The &#8220;etch suppression&#8221; area is well defined by the illumination spot, a feature that can be used to create heterogeneously etched regions with a high degree of control, shown here on patterned samples. Together with the studied self-limitation effect, the technique offers a way to determine the position of rolled-up micro- and nanotubes independently from the predefined lithographic pattern.</p

Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

We report on the observation and experimental studies of impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field. The terahertz electroluminescence is observed in a wide range of doping levels (at noncompensated donor density from 4.5×10[sup 16] to 3.4×10[sup 18] cm[sup −3]). Spectra of terahertz luminescence and photoconductivity are studied by means of Fourier transform spectrometry. Distinctive features of the spectra can be assigned to intracenter electron transitions between excited and ground states of silicon and oxygen donors and to hot electron transitions to the donor states.Peer reviewe