Localized - delocalized electron quantum phase transitions

Metal--insulator transitions and transitions between different quantum Hall liquids are used to describe the physical ideas forming the basis of quantum phase transitions and the methods of application of theoretical results in processing experimental data. The following two theoretical schemes are discussed and compared: the general theory of quantum phase transitions, which has been developed according to the theory of thermodynamic phase transitions and relies on the concept of a partition function, and a theory which is based on a scaling hypothesis and the renormalization-group concept borrowed from quantum electrodynamics, with the results formulated in terms of flow diagrams.Comment: 27 pages, 20 figure

Comment on: Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si Inversion Layers

Comment on: Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si Inversion LayersComment: 1 page, submitted to PR

Quantum phase transitions in two-dimensional systems

Experimental data on quantum phase transitions in two-dimensional systems (superconductor-insulator, metal-insulator, and transitions under conditions of integer quantum Hall effect) are critically analyzed.Comment: 13 pages, 16 figure

Direct measurements of the spin and the cyclotron gaps in a 2D electron system in silicon

Using magnetocapacitance data in tilted magnetic fields, we directly determine the chemical potential jump in a strongly correlated two-dimensional electron system in silicon when the filling factor traverses the spin and the cyclotron gaps. The data yield an effective g-factor that is close to its value in bulk silicon and does not depend on filling factor. The cyclotron splitting corresponds to the effective mass that is strongly enhanced at low electron densities