Improvement of corrosion resistance and mechanical properties of chrome plating by diamond-like carbon coating with different silicon-based interlayers

In this study, the silicon-based interlayers for hydrogenated amorphous carbon (a-C:H) coating on a chromium-plated substrate are presented. The a-Si, a-Si:N, a-Si:H and a-Si _x C _y :H interlayers with a thickness of about 306 nm were deposited by direct current magnetron sputtering technique. The a-C:H films with a thickness of about 317 nm was prepared as a top layer by radio frequency-plasma chemical vapor deposition. The a-C:H films with silicon-based interlayers were characterized by x-ray photoelectron spectroscopy, Raman spectroscopy, field emission-secondary electron microscopy, nanoindentation, micro-scratching, and electrochemical corrosion measurements in terms of their structure, morphology, mechanical and adhesive properties, and corrosion resistance. The a-C:H films with an a-Si:H interlayer exhibit the lowest corrosion current density, which is about 36 times lower than that of the uncoated chromium-plated substrate. In addition, the hardness increases from 8.48 GPa for the uncoated substrate to 20.98 GPa for the a-C:H/a-Si:H sample. The mixing with hydrogen gas could reduce the residual oxygen during the deposition process, which could reduce the Si–O bonding and improve the adhesion strength between the a-C:H film and the a-Si:H interlayer and the a-Si:H interlayer and the substrate. Therefore, it can be concluded that the protective a-C:H coating with an a-Si:H interlayer has excellent potential to significantly improve the durability and extend the service life of materials used in abrasive and corrosive environments

Electrical Conduction Properties of Hydrogenated Amorphous Carbon Films with Different Structures

Hydrogenated amorphous carbon (a-C:H) films have optical and electrical properties that vary widely depending on deposition conditions; however, the electrical conduction mechanism, which is dependent on the film structure, has not yet been fully revealed. To understand the relationship between the film structure and electrical conduction mechanism, three types of a-C:H films were prepared and their film structures and electrical properties were evaluated. The sp2/(sp2 + sp3) ratios were measured by a near-edge X-ray absorption fine structure technique. From the conductivity–temperature relationship, variable-range hopping (VRH) conduction was shown to be the dominant conduction mechanism at low temperatures, and the electrical conduction mechanism changed at a transition temperature from VRH conduction to thermally activated band conduction. On the basis of structural analyses, a model of the microstructure of a-C:H that consists of sp2 and sp3-bonded carbon clusters, hydrogen atoms and dangling bonds was built. Furthermore, it is explained how several electrical conduction parameters are affected by the carrier transportation path among the clusters