Optical sensing with Anderson-localised light

We show that fabrication imperfections in silicon nitride photonic crystal waveguides can be used as a resource to efficiently confine light in the Anderson-localised regime and add functionalities to photonic devices. Our results prove that disorder-induced localisation of light can be utilised to realise an alternative class of high-quality optical sensors operating at room temperature. We measure wavelength shifts of optical resonances as large as 15.2 nm, more than 100 times the spectral linewidth of 0.15\,nm, for a refractive index change of about 0.38. By studying the temperature dependence of the optical properties of the system, we report wavelength shifts of up to about 2 nm and increases of more than a factor 2 in the quality factor of the cavity resonances, when going from room to cryogenic temperatures. Such a device can allow simultaneous sensing of both local contaminants and temperature variations, monitored by tens of optical resonances spontaneously appearing along a single photonic crystal waveguide. Our findings demonstrate the potential of Anderson-localised light in photonic crystals for scalable and efficient optical sensors operating in the visible and near-infrared range of wavelengths.Comment: 10 pages, 3 figure

Metallic nanorings for broadband, enhanced extraction of light from solid-state emitters

We report on the increased extraction of light emitted by solid-state sources embedded within high refractive index materials. This is achieved by making use of a local lensing effect by sub-micron metallic rings deposited on the sample surface and centered around single emitters. We show enhancements in the intensity of the light emitted by InAs/GaAs single quantum dot lines into free space as high as a factor 20. Such a device is intrinsically broadband and therefore compatible with any kind of solid-state light source. We foresee the fabrication of metallic rings via scalable techniques, like nano-imprint, and their implementation to improve the emission of classical and quantum light from solid-state sources. Furthermore, while increasing the brightness of the devices, the metallic rings can also act as top contacts for the local application of electric fields for carrier injection or wavelength tuning.Comment: 10 pages, 3 figure

Quantum communication networks with defects in silicon carbide

Quantum communication promises unprecedented communication capabilities enabled by the transmission of quantum states of light. However, current implementations face severe limitations in communication distance due to photon loss. Silicon carbide (SiC) defects have emerged as a promising quantum device platform, offering strong optical transitions, long spin coherence lifetimes and the opportunity for integration with semiconductor devices. Some defects with optical transitions in the telecom range have been identified, allowing to interface with fiber networks without the need for wavelength conversion. These unique properties make SiC an attractive platform for the implementation of quantum nodes for quantum communication networks. We provide an overview of the most prominent defects in SiC and their implementation in spin-photon interfaces. Furthermore, we model a memory-enhanced quantum communication protocol in order to extract the parameters required to surpass a direct point-to-point link performance. Based on these insights, we summarize the key steps required towards the deployment of SiC devices in large-scale quantum communication networks.Comment: 20 pages, 8 figure