Increase tolerance polarization convertors

An optical polarization converter device includes a first polarization converter section [1100] and a second polarization converter section [1102], which have mirror image cross-sections of each other and which are made of a common material and have orientation (i.e., tilt) errors equal in magnitude and opposite in sign. Preferably, one section has half, the other one and a half times the length of an original (single section, non-tolerant) polarization converter, i.e., the lengths of the two sections have a ratio of 1:3. Other embodiments include length ratios of 3:5 and 5:7. In addition to correcting fabrication errors, the polarization converter also corrects errors due to temperature and wavelength, improving the tolerance with respect to operational conditions

New concept for a co-directional polarization insensitive SOA-based wavelength converter

VPI-simulation of a new all-optical wavelength converter is presented. It is based on interferometric effects in two Mach-Zehnder interferometers (MZI), parallel connected by polarization components (PCs). The PCs provide filtering between probe and signal wavelengths, and polarization-insensitive operation. Different efficiency values for PCs are supposed. Simulation shows wide operational range (10 dB) for the input power. Results obtained are also suitable for cascading these devices in optical networks (extinction ratio >10 dB, isolation >20 dB)

Design of a POLIS multi-wavelength laser

POLIS (POLarization based Integration Scheme) is a new idea for combining passive and active components on a chip. It requires only one type of material, and obtains different functions (passive or active) by using polarization depended absorption in strained quantum wells. The simulation of a first integrated POLIS-circuiton InP is presented: a multi-wavelength laser. This circuit contains gain blocks, polarization converters and a phased array demultiplexer. The simulations demonstrate a multi-wavelength laser with 2 compressively strained quantum wells. The simulated threshold current is 90 mA. Predicted output power is above 40 mW, for each of four wavelength channels, at 200 mA current

Integrated 2x2 polarization splitter/converter on InP/InGaAsP

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Increasing tolerance in passive integrated optical polarization converters

Integration of optical functions promises to be an important new technology, with applications in telecommunications, datacommunications, and sensing. Controlling the polarization in integrated circuits is needed to fully benefit from the use of light. Integrated polarization converters are required for this, but devices proposed so far have suffered from tight fabrication tolerances. It is shown here what the root of this intolerance is and how critical fabrication errors can be compensated in a two-section polarization converter. The new device leads to doubling of the fabrication tolerances and wavelength range and promises conversion efficiencies above 99% over a wide range of fabrication and operation parameters

Past, present, and future of InP-based photonic integration

\u3cp\u3eThe application market for Photonic Integrated Circuits (PICs) is rapidly growing. Photonic integration is the dominant technology in high bandwidth communications and is set to become dominant in many fields of photonics, just like microelectronics in the field of electronics. PICs offer compelling performance advances in terms of precision, bandwidth, and energy efficiency. To enable uptake in new sectors, the availability of highly standardized (generic) photonic integration platform technologies is of key importance as this separates design from technology, reducing barriers for new entrants. The major platform technologies today are Indium Phosphide (InP)-based monolithic integration and Silicon Photonics. In this perspective paper, we will describe the current status and future developments of InP-based generic integration platforms.\u3c/p\u3

1.3 Integration of photonics and electronics

\u3cp\u3eThe market for photonic integrated circuits (PICs) is rapidly growing. Photonic integration which is now the dominant technology in high-bandwidth and long-distance telecommunications is increasingly applied to shorter distances within data centers. Now, it is set to become also dominant in many other fields: PICs offer compelling performance advances in terms of precision, bandwidth, and energy efficiency. To enable uptake in new sectors, the availability of highly standardized (generic) photonic-integration-platform technologies is of key importance, as this separates design from technology, reducing barriers for new entrants. Another major challenge is low-cost energy-efficient integration of photonics with the electronic circuitry that is used for driving and controlling the photonic IC and processing its information. Today, the major platform technologies are indium phosphide (InP)-based monolithic integration and silicon (Si)-based photonics. InP technology offers integration of the full suite of photonic components, including lasers, optical amplifiers, and high-performance modulators. While Si photonics offers better compatibility with CMOS process facilities, it lacks the most important photonic building blocks: lasers and optical amplifiers. In this paper, we describe the current status and directions for future developments of InP-based generic integration, and we compare the potential of InP photonics and Si photonics for integration with controlling electronics. In what follows, we will focus in Section 1 on similarities and differences between InP and Si photonics. In Section 2, we will give a concise overview of the present status of this technology and how it compares with Silicon photonics. In sections 3 and 4 we will discuss membrane-based technologies which support efficient integration with electronics.\u3c/p\u3

Design and simulation of a high bandwith optical modulator for IMOS technology based on slot-waveguide with electro optical polymer

Electro-optical modulato,cc are considered to be a key devices for optical interconnects. In order to implement this device in the new InP membrane On Silicon platform (IMOS), a slot—waveguide configuration with a high nonlinear polymer is studied. Simulations and electrical calculations show good peiformance and fabrication tolerance using n-doped InP as the slot-waveguide material. The small dimensions of the structure and the high electro-optical coefficient of the polymer allow devices with a smnallfootprint (hundreds ofp2), high bandwidth (> 100GHz) and low Va x L value (~-~ 0.7Vmmn). This solution is suitable or integration with passive devices already developedfor this platform, and with active devices that are under development