Narrow-Linewidth Homogeneous Optical Emitters in Diamond Nanostructures via Silicon Ion Implantation

The negatively-charged silicon-vacancy (SiV−) center in diamond is a bright source of indistinguishable single photons and a useful resource in quantum information protocols. Until now, SiV− centers with narrow optical linewidths and small inhomogeneous distributions of SiV− transition frequencies have only been reported in samples doped with silicon during diamond growth. We present a technique for producing implanted SiV− centers with nearly lifetime-limited optical linewidths and a small inhomogeneous distribution. These properties persist after nanofabrication, paving the way for incorporation of high-quality SiV− centers into nanophotonic devices.Physic

Electrical Manipulation of Telecom Color Centers in Silicon

Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon color centers by fabricating lateral electrical diodes with an integrated G center ensemble in a commercial silicon on insulator wafer. The ensemble optical response is characterized under application of a reverse-biased DC electric field, observing both 100% modulation of fluorescence signal, and wavelength redshift of approximately 1.4 GHz/V above a threshold voltage. Finally, we use G center fluorescence to directly image the electric field distribution within the devices, obtaining insight into the spatial and voltage-dependent variation of the junction depletion region and the associated mediating effects on the ensemble. Strong correlation between emitter-field coupling and generated photocurrent is observed. Our demonstration enables electrical control and stabilization of semiconductor quantum emitters

Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures

The controlled creation of defect center---nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here, we demonstrate direct, maskless creation of atom-like single silicon-vacancy (SiV) centers in diamond nanostructures via focused ion beam implantation with $\sim 32$ nm lateral precision and $< 50$ nm positioning accuracy relative to a nanocavity. Moreover, we determine the Si+ ion to SiV center conversion yield to $\sim 2.5\%$ and observe a 10-fold conversion yield increase by additional electron irradiation. We extract inhomogeneously broadened ensemble emission linewidths of $\sim 51$ GHz, and close to lifetime-limited single-emitter transition linewidths down to $126 \pm13$ MHz corresponding to $\sim 1.4$-times the natural linewidth. This demonstration of deterministic creation of optically coherent solid-state single quantum systems is an important step towards development of scalable quantum optical devices

Quantum interference of electromechanically stabilized emitters in nanophotonic devices

Photon-mediated coupling between distant matter qubits may enable secure communication over long distances, the implementation of distributed quantum computing schemes, and the exploration of new regimes of many-body quantum dynamics. Nanophotonic devices coupled to solid-state quantum emitters represent a promising approach towards realization of these goals, as they combine strong light-matter interaction and high photon collection efficiencies. However, the scalability of these approaches is limited by the frequency mismatch between solid-state emitters and the instability of their optical transitions. Here we present a nano-electromechanical platform for stabilization and tuning of optical transitions of silicon-vacancy (SiV) color centers in diamond nanophotonic devices by dynamically controlling their strain environments. This strain-based tuning scheme has sufficient range and bandwidth to alleviate the spectral mismatch between individual SiV centers. Using strain, we ensure overlap between color center optical transitions and observe an entangled superradiant state by measuring correlations of photons collected from the diamond waveguide. This platform for tuning spectrally stable color centers in nanophotonic waveguides and resonators constitutes an important step towards a scalable quantum network

Development of a Boston-area 50-km fiber quantum network testbed

Distributing quantum information between remote systems will necessitate the integration of emerging quantum components with existing communication infrastructure. This requires understanding the channel-induced degradations of the transmitted quantum signals, beyond the typical characterization methods for classical communication systems. Here we report on a comprehensive characterization of a Boston-Area Quantum Network (BARQNET) telecom fiber testbed, measuring the time-of-flight, polarization, and phase noise imparted on transmitted signals. We further design and demonstrate a compensation system that is both resilient to these noise sources and compatible with integration of emerging quantum memory components on the deployed link. These results have utility for future work on the BARQNET as well as other quantum network testbeds in development, enabling near-term quantum networking demonstrations and informing what areas of technology development will be most impactful in advancing future system capabilities.Comment: 9 pages, 5 figures + Supplemental Material

All-optical nanoscale thermometry with silicon-vacancy centers in diamond

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