13 research outputs found
Narrow-Linewidth Homogeneous Optical Emitters in Diamond Nanostructures via Silicon Ion Implantation
The negatively-charged silicon-vacancy (SiVâ) center in diamond is a bright source of indistinguishable single photons and a useful resource in quantum information protocols. Until now, SiVâ centers with narrow optical linewidths and small inhomogeneous distributions of SiVâ transition frequencies have only been reported in samples doped with silicon during diamond growth. We present a technique for producing implanted SiVâ centers with nearly lifetime-limited optical linewidths and a small inhomogeneous distribution. These properties persist after nanofabrication, paving the way for incorporation of high-quality SiVâ centers into nanophotonic devices.Physic
Electrical Manipulation of Telecom Color Centers in Silicon
Silicon color centers have recently emerged as promising candidates for
commercial quantum technology, yet their interaction with electric fields has
yet to be investigated. In this paper, we demonstrate electrical manipulation
of telecom silicon color centers by fabricating lateral electrical diodes with
an integrated G center ensemble in a commercial silicon on insulator wafer. The
ensemble optical response is characterized under application of a
reverse-biased DC electric field, observing both 100% modulation of
fluorescence signal, and wavelength redshift of approximately 1.4 GHz/V above a
threshold voltage. Finally, we use G center fluorescence to directly image the
electric field distribution within the devices, obtaining insight into the
spatial and voltage-dependent variation of the junction depletion region and
the associated mediating effects on the ensemble. Strong correlation between
emitter-field coupling and generated photocurrent is observed. Our
demonstration enables electrical control and stabilization of semiconductor
quantum emitters
Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures
The controlled creation of defect center---nanocavity systems is one of the
outstanding challenges for efficiently interfacing spin quantum memories with
photons for photon-based entanglement operations in a quantum network. Here, we
demonstrate direct, maskless creation of atom-like single silicon-vacancy (SiV)
centers in diamond nanostructures via focused ion beam implantation with nm lateral precision and nm positioning accuracy relative to a
nanocavity. Moreover, we determine the Si+ ion to SiV center conversion yield
to and observe a 10-fold conversion yield increase by additional
electron irradiation. We extract inhomogeneously broadened ensemble emission
linewidths of GHz, and close to lifetime-limited single-emitter
transition linewidths down to MHz corresponding to -times
the natural linewidth. This demonstration of deterministic creation of
optically coherent solid-state single quantum systems is an important step
towards development of scalable quantum optical devices
Quantum interference of electromechanically stabilized emitters in nanophotonic devices
Photon-mediated coupling between distant matter qubits may enable secure
communication over long distances, the implementation of distributed quantum
computing schemes, and the exploration of new regimes of many-body quantum
dynamics. Nanophotonic devices coupled to solid-state quantum emitters
represent a promising approach towards realization of these goals, as they
combine strong light-matter interaction and high photon collection
efficiencies. However, the scalability of these approaches is limited by the
frequency mismatch between solid-state emitters and the instability of their
optical transitions. Here we present a nano-electromechanical platform for
stabilization and tuning of optical transitions of silicon-vacancy (SiV) color
centers in diamond nanophotonic devices by dynamically controlling their strain
environments. This strain-based tuning scheme has sufficient range and
bandwidth to alleviate the spectral mismatch between individual SiV centers.
Using strain, we ensure overlap between color center optical transitions and
observe an entangled superradiant state by measuring correlations of photons
collected from the diamond waveguide. This platform for tuning spectrally
stable color centers in nanophotonic waveguides and resonators constitutes an
important step towards a scalable quantum network
Development of a Boston-area 50-km fiber quantum network testbed
Distributing quantum information between remote systems will necessitate the
integration of emerging quantum components with existing communication
infrastructure. This requires understanding the channel-induced degradations of
the transmitted quantum signals, beyond the typical characterization methods
for classical communication systems. Here we report on a comprehensive
characterization of a Boston-Area Quantum Network (BARQNET) telecom fiber
testbed, measuring the time-of-flight, polarization, and phase noise imparted
on transmitted signals. We further design and demonstrate a compensation system
that is both resilient to these noise sources and compatible with integration
of emerging quantum memory components on the deployed link. These results have
utility for future work on the BARQNET as well as other quantum network
testbeds in development, enabling near-term quantum networking demonstrations
and informing what areas of technology development will be most impactful in
advancing future system capabilities.Comment: 9 pages, 5 figures + Supplemental Material
All-optical nanoscale thermometry with silicon-vacancy centers in diamond
International audienc