2 research outputs found
Hybrid Phototransistors Based on Bulk Heterojunction Films of Poly(3-hexylthiophene) and Zinc Oxide Nanoparticle
Hybrid phototransistors (HPTRs) were fabricated on glass
substrates using organic/inorganic hybrid bulk heterojunction films
of p-type poly(3-hexylthiophene) (P3HT) and n-type zinc oxide nanoparticles
(ZnO<sub><i>NP</i></sub>). The content of ZnO<sub><i>NP</i></sub> was varied up to 50 wt % in order to understand
the composition effect of ZnO<sub><i>NP</i></sub> on the
performance of HPTRs. The morphology and nanostructure of the P3HT:ZnO<sub><i>NP</i></sub> films was examined by employing high resolution
electron microscopes and synchrotron radiation grazing angle X-ray
diffraction system. The incident light intensity (<i>P</i><sub>IN</sub>) was varied up to 43.6 μW/cm<sup>2</sup>, whereas
three major wavelengths (525 nm, 555 nm, 605 nm) corresponded to the
optical absorption of P3HT were applied. Results showed that the present
HPTRs showed typical p-type transistor performance even though the
n-type ZnO<sub><i>NP</i></sub> content increased up to 50
wt %. The highest transistor performance was obtained at 50 wt %,
whereas the lowest performance was measured at 23 wt % because of
the immature bulk heterojunction morphology. The drain current (<i>I</i><sub>D</sub>) was proportionally increased with <i>P</i><sub>IN</sub> due to the photocurrent generation in addition
to the field-effect current. The highest apparent and corrected responsivities
(<i>R</i><sub>A</sub> = 4.7 A/W and <i>R</i><sub>C</sub> = 2.07 A/W) were achieved for the HPTR with the P3HT:ZnO<sub><i>NP</i></sub> film (50 wt % ZnO<sub><i>NP</i></sub>) at <i>P</i><sub>IN</sub> = 0.27 μW/cm<sup>2</sup> (555 nm)
Light-Induced Open Circuit Voltage Increase in Polymer Solar Cells with Ternary Bulk Heterojunction Nanolayers
We
report a light-induced open circuit voltage (<i>V</i><sub>OC</sub>) increase in polymer solar cells with ternary bulk
heterojunction (BHJ) layers that are composed of poly(3-hexylthiophene)
(P3HT), poly[(4,8-bis(2-ethylhexyloxy)-benzo[1,2-b:4,5-b′]dithiophene)-2,6-diyl-<i>alt</i>-(N-2-ethylhexylthieno[3,4-<i>c</i>]pyrrole-4,6-dione)-2,6-diyl]]
(PBDTTPD), and [6,6]-phenyl-C<sub>61</sub>-butyric acid methyl ester
(PC<sub>61</sub>BM). The ternary BHJ layers were prepared by varying
the composition of donor polymers at a fixed ratio (1:1 by weight)
of donor (P3HT + PBDTTPD) to acceptor (PC<sub>61</sub>BM). Results
showed that <i>V</i><sub>OC</sub> was gradually increased
under continuous illumination of solar light (100 mW/cm<sup>2</sup>) for ternary solar cells, whereas no <i>V</i><sub>OC</sub> increase was measured for binary solar cells without PBDTTPD. As
a consequence, the power conversion efficiency (PCE) of ternary solar
cells (except the highest PBDTTPD content) was rather higher after
solar light illumination for 10 h, even though the binary solar cell
exhibited significantly lowered PCE after 10 h illumination. The <i>V</i><sub>OC</sub> increase has been attributed to the lateral
phase segregation between P3HT and PBDTTPD domains in the ternary
BHJ layers under continuous illumination of solar light, as evidenced
from the analysis result by Raman spectroscopy, atomic force microscopy,
transmission electron microscopy, and synchrotron radiation grazing-incidence angle X-ray diffraction measurements