A Novel Statistical Timing and Leakage Power Characterization of Partially-Depleted

This paper presents a novel statistical characterization for accurate timing and a new probabilistic based analysis for leakage power estimation of Partially-Depleted Silicon-On-Insulator (PD-SOI) circuits in BSIMSOI3.2 100nm technology. The proposed timing and leakage power estimation algorithms are implemented in Matlab, Hspice, and C. The proposed methodology is applied to ISCAS85 benchmarks, and the results show that the error is within 5 % compared with Monte Carlo simulation results