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    2 research outputs found

    Impact of Mechanical Stress on Total-Dose Effects in Bipolar Transistors

    Author
    Publication venue
    HAL CCSD
    Publication date
    Field of study
    No full text
    International audienc
    HAL Descartes

    Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices

    Author
    Publication venue
    'Institute of Electrical and Electronics Engineers (IEEE)'
    Publication date
    Field of study
    No full text
    Hal - Université Grenoble Alpes
    HAL Université de Savoie
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