Doppler-free high resolution continuous wave optical UV-spectroscopy on the \mathrm{A}\,^2\Sigma^+ \leftarrow \mathrm{X}\,^2\Pi_{3/2} transition in nitric oxide

We report on Doppler-free continuous-wave optical UV-spectroscopy resolving the hyperfine structure of the \mathrm{A}\,^2\Sigma^+ \leftarrow \mathrm{X}\,^2\Pi_{3/2} transition in nitric oxide for total angular momenta $J_X=1.5-19.5$ on the $\mathrm{oP_{12ee}}$ branch. The resulting line splittings are compared to calculated splittings and fitted determining new values for the molecular constants $b, c, eQq_0$ and $b_F$ for the \mathrm{A}\,^2\Sigma^+ state. The constants are in good agreement with values previously determined by quantum beat spectroscopy.Comment: 8 Pages, 4 figure

Collisional shift and broadening of Rydberg states in nitric oxide at room temperature

We report on the collisional shift and line broadening of Rydberg states in nitric oxide (NO) with increasing density of a background gas at room temperature. As a background gas we either use NO itself or nitrogen (N$_{2}$). The precision spectroscopy is performed by a sub-Doppler three-photon excitation scheme with a subsequent readout of the Rydberg states realized by the amplification of a current generated by free charges due to collisions. The shift shows a dependence on the rotational quantum state of the ionic core and no dependence on the principle quantum number of the orbiting Rydberg electron. The experiment was performed in the context of developing a trace-gas sensor for breath-gas analysis in a medical application

Ultraviolet photodetectors and readout based on a‐IGZO semiconductor technology

In this work, real-time ultraviolet photodetectors are realized through metal–semiconductor–metal (MSM) structures. Amorphous indium gallium zinc oxide (a-IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an all-enhancement a-IGZO thin-film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R, a low response time tRES, and a good noise equivalent power value NEP.Deutsche ForschungsgemeinschaftProjekt DEA