Микроэлектронный преобразователь заряда

Fine knowledge of semiconductors physical properties and ability purposeful possess them make a conditions to fabrication semiconductor devices good quality. Materials surface properties are attributable to this properties. Various methods are used for analysis and control materials surface properties. Recently tunnel and atomic force microscopes with spatial resolution of 0.1 nm or less are aplied for analysis and control of surface properties. In practice such spatial resolution is not necessary always. Sometimes it is sufficient 0.1 µm resolution and capacitic Kelvin method is possible to apply for this intention. Analysis of capacitic converter’s spatial resolution is presented in the paper. The tip diameter of vibrating electrode must be reduced to 0.1 µm or less for such spatial resolution and the distance between tip and studying surface will be smaller by several times. The configuration of produced microelectrode always is conic that’s the tip angle must be reduced to 10°–15°. Small microelectrode vibration amplitude limits converter’s voltage sensitivity. It is possible to improve converter’s voltage sensitivity by factor of 3 using partial compensation of parasitic capacity. Ill. 4, bibl. 7 (in Lithuanian; summaries in Lithuanian, English and Russian)

RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders

The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration