Cytoprotection as an available means in the therapy of occupational diseases (literature review)

In this article presents a literature review of the use of cytoprotective drugs in the treatment of occupational pathology. The possibilities and prospects of using cytoprotectors in the complex therapy of occupational diseases are considered. The most frequent cases of the use of drugs of this group in occupational pathology are presented, their main effects are highlighted, hypotheses are formulated about the further prospects of using drugs of this group in the treatment of occupational diseases.В статье представлен литературный обзор применения цитопротективных препаратов при лечении профпатологии. Рассмотрены возможности и перспективы применения цитопротекторов в составе комплексной терапии профессиональных заболеваний. Приведены наиболее частые случаи применения препаратов данной группы в профпатологии, выделены их основные эффекты, сформулированы гипотезы о дальнейших перспективах использования препаратов данной группы в терапии профессиональных заболевани

Determination of the resistance of external parameters to the degradation of the parameters of silicon photocells with input nickel atoms

Currently, there is a growing need for high-performance photocells with increased stability of parameters to external influences, such as thermal and radiation resistance. This work is devoted to the study of photocells available in the volume of an ordered micro- and nanostructure based on silicon doped with impurity nickel atoms. The study of the formation of micro- and nanoclusters of impurity atoms in silicon photocells that were subjected to additional high-temperature processing makes it possible to determine the degradation of nickel clusters, which strongly affect the electrical parameters of photocells. It is shown that impurity nickel atoms will increase the stability of the electrophysical parameters of photocells under the influence of both high temperature and radiation. The results obtained in the study showed that the introduction of nickel impurity atoms into the volume of silicon-based photocells leads to temperature and radiation resistance, and also increases efficiency

Evidence for three Kππ K\pi \pi resonant states below 1.4 GeV in K+p K^{+} p reactions at 5 GeV/c

The study of K+p reactions at an incident momentum of 4.97 GeV/c suggests that the wide enhancement in the (Kππ)+ mass spectrum may be split into several resonant states. In particular, examination of the K*(892)π decay mode indicates the existence of the states K*(1230), K*(1280) and K*(1320), in addition to the well known K*(1420). The K*(1230) and K*(1320) have the properties expected from 1+ states produced by 0+ exchange. © 1967.SCOPUS: ar.jinfo:eu-repo/semantics/publishe