Magnetic Field Induced Spin Polarization of AlAs Two-dimensional Electrons

Two-dimensional (2D) electrons in an in-plane magnetic field become fully spin polarized above a field B_P, which we can determine from the in-plane magnetoresistance. We perform such measurements in modulation-doped AlAs electron systems, and find that the field B_P increases approximately linearly with 2D electron density. These results imply that the product |g*|m*, where g* is the effective g-factor and m* the effective mass, is a constant essentially independent of density. While the deduced |g*|m* is enhanced relative to its band value by a factor of ~ 4, we see no indication of its divergence as 2D density approaches zero. These observations are at odds with results obtained in Si-MOSFETs, but qualitatively confirm spin polarization studies of 2D GaAs carriers.Comment: 4 pages, 5 figure

Anomalous Rashba spin splitting in two-dimensional hole systems

It has long been assumed that the inversion asymmetry-induced Rashba spin splitting in two-dimensional (2D) systems at zero magnetic field is proportional to the electric field that characterizes the inversion asymmetry of the confining potential. Here we demonstrate, both theoretically and experimentally, that 2D heavy hole systems in accumulation layer-like single heterostructures show the opposite behavior, i.e., a decreasing, but nonzero electric field results in an increasing Rashba coefficient.Comment: 4 pages, 3 figure

Spin polarization of strongly interacting 2D electrons: the role of disorder

In high-mobility silicon MOSFET's, the $g^*m^*$ inferred indirectly from magnetoconductance and magnetoresistance measurements with the assumption that $g^*\mu_BH_s=2E_F$ are in surprisingly good agreement with $g^*m^*$ obtained by direct measurement of Shubnikov-de Haas oscillations. The enhanced susceptibility $\chi^* \propto (g^*m^*)$ exhibits critical behavior of the form $\chi^* \propto (n - n_0)^{-\alpha}$. We examine the significance of the field scale $H_s$ derived from transport measurements, and show that this field signals the onset of full spin polarization only in the absence of disorder. Our results suggest that disorder becomes increasingly important as the electron density is reduced toward the transition.Comment: 4 pages, 3 figure

Destruction of diagonal and off-diagonal long range order by disorder in two-dimensional hard core boson systems

We use quantum Monte Carlo simulations to study the effect of disorder, in the form of a disordered chemical potential, on the phase diagram of the hard core bosonic Hubbard model in two dimensions. We find numerical evidence that in two dimensions, no matter how weak the disorder, it will always destroy the long range density wave order (checkerboard solid) present at half filling and strong nearest neighbor repulsion and replace it with a bose glass phase. We study the properties of this glassy phase including the superfluid density, energy gaps and the full Green's function. We also study the possibility of other localized phases at weak nearest neighbor repulsion, i.e. Anderson localization. We find that such a phase does not truly exist: The disorder must exceed a threshold before the bosons (at weak nn repulsion) are localized. The phase diagram for hard core bosons with disorder cannot be obtained easily from the soft core phase diagram discussed in the literature.Comment: 7 pages, 10 eps figures include

Metallicity and its low temperature behavior in dilute 2D carrier systems

We theoretically consider the temperature and density dependent transport properties of semiconductor-based 2D carrier systems within the RPA-Boltzmann transport theory, taking into account realistic screened charged impurity scattering in the semiconductor. We derive a leading behavior in the transport property, which is exact in the strict 2D approximation and provides a zeroth order explanation for the strength of metallicity in various 2D carrier systems. By carefully comparing the calculated full nonlinear temperature dependence of electronic resistivity at low temperatures with the corresponding asymptotic analytic form obtained in the $T/T_F \to 0$ limit, both within the RPA screened charged impurity scattering theory, we critically discuss the applicability of the linear temperature dependent correction to the low temperature resistivity in 2D semiconductor structures. We find quite generally that for charged ionized impurity scattering screened by the electronic dielectric function (within RPA or its suitable generalizations including local field corrections), the resistivity obeys the asymptotic linear form only in the extreme low temperature limit of $T/T_F \le 0.05$. We point out the experimental implications of our findings and discuss in the context of the screening theory the relative strengths of metallicity in different 2D systems.Comment: We have substantially revised this paper by adding new materials and figures including a detailed comparison to a recent experimen

Double-Layer Systems at Zero Magnetic Field

We investigate theoretically the effects of intralayer and interlayer exchange in biased double-layer electron and hole systems, in the absence of a magnetic field. We use a variational Hartree-Fock-like approximation to analyze the effects of layer separation, layer density, tunneling, and applied gate voltages on the layer densities and on interlayer phase coherence. In agreement with earlier work, we find that for very small layer separations and low layer densities, an interlayer-correlated ground state possessing spontaneous interlayer coherence (SILC) is obtained, even in the absence of interlayer tunneling. In contrast to earlier work, we find that as a function of total density, there exist four, rather than three, distinct noncrystalline phases for balanced double-layer systems without interlayer tunneling. The newly identified phase exists for a narrow range of densities and has three components and slightly unequal layer densities, with one layer being spin polarized, and the other unpolarized. An additional two-component phase is also possible in the presence of sufficiently strong bias or tunneling. The lowest-density SILC phase is the fully spin- and pseudospin-polarized ``one-component'' phase discussed by Zheng {\it et al.} [Phys. Rev. B {\bf 55}, 4506 (1997)]. We argue that this phase will produce a finite interlayer Coulomb drag at zero temperature due to the SILC. We calculate the particle densities in each layer as a function of the gate voltage and total particle density, and find that interlayer exchange can reduce or prevent abrupt transfers of charge between the two layers. We also calculate the effect of interlayer exchange on the interlayer capacitance.Comment: 35 pages, 19 figures included. To appear in PR