STM Observation of Bi line structures on the Si(100) surface with Ag deposition

We report the dynamic process of Bi line structure (BLS) formation and the reactiondynamics of the BLS with foreign atoms on Si(100) surfaces by scanning tunnelingmicroscopy (STM). The BLS consisting of Bi dimers is formed on the Si(100) surfaceafter bismuth deposition at 400~500oC. From the consecutive STM images taken after Bideposition on the surface, we found that BLSs are formed by expelling atoms that composethe Si terrace at the front of the BLS growth. When Ag atoms were deposited on theSi(100) surface with the BLSs, we found that Ag atoms are preferentially adsorbed on the Siterraces compared with BLSs

AN STM OBSERVATION OF ADSORPTION OF CuPc ON THE Si(100) SURFACE WITH Bi-LINE STRUCTURES

We report the reaction dynamics of the Bi-line structure (BLS) with copper-phthalocyanine (CuPc)molecules as well as hydrogen and Ag atoms on Si(100) surfaces observed by scanning tunnelingmicroscopy. Co-adsorption of hydrogen and Ag on the Si(100) surface with BLSs brought aboutagglomeration of Ag atoms on the Si terrace. When CuPc molecules were deposited on the Si(100)surface with BLSs at room temperature, domains with c(4×4) periodicity appeared in the terracesnear the BLS. When the surface was annealed at 200—400◦C, the area of the c(4×4) domain wasincreased. The CuPc molecules, adsorbed on BLS, were possibly dissociated by catalytic reaction ofBi atoms

AN STM OBSERVATION OF ADSORPTION OF CuPc ON THE Si(100) SURFACE WITH Bi-LINE STRUCTURES

We report the reaction dynamics of the Bi-line structure (BLS) with copper-phthalocyanine (CuPc)molecules as well as hydrogen and Ag atoms on Si(100) surfaces observed by scanning tunneling microscopy. Co-adsorption of hydrogen and Ag on the Si(100) surface with BLSs brought about agglomeration of Ag atoms on the Si terrace. When CuPc molecules were deposited on the Si(100) surface with BLSs at room temperature, domains with c(4 × 4) periodicity appeared in the terraces near the BLS. When the surface was annealed at 200°C–400°C, the area of the c(4 × 4) domain was increased. The CuPc molecules, adsorbed on BLS, were possibly dissociated by catalytic reaction of Bi atoms.Bismuth, hydrogen, phthalocyanine, Si(100) surface, silver, STM

STM observation of Bi line structures on the Si(1 0 0) surface with Ag deposition

We report the dynamic process of Bi line structure (BLS) formation and the reactiondynamics of the BLS with foreign atoms on Si(100) surfaces by scanning tunnelingmicroscopy (STM). The BLS consisting of Bi dimers is formed on the Si(100) surfaceafter bismuth deposition at 400~500oC. From the consecutive STM images taken after Bideposition on the surface, we found that BLSs are formed by expelling atoms that composethe Si terrace at the front of the BLS growth. When Ag atoms were deposited on theSi(100) surface with the BLSs, we found that Ag atoms are preferentially adsorbed on the Siterraces compared with BLSs