C. W. Marshall and G. Kovacs (eds), No Laughing Matter: Studies in Athenian Comedy (London: Bloomsbury Academic, 2012)

No abstract available

Searching for the IRA 'disappeared': ground-penetrating radar investigation of a churchyard burial site, Northern Ireland

A search for the body of a victim of terrorist abduction and murder was made in a graveyard on the periphery of a major conurbation in Northern Ireland. The area is politically sensitive and the case of high profile. This required non-invasive, completely non-destructive and rapid assessment of the scene. A MALA RAMAC ground-penetrating radar system was used to achieve these objectives. Unprocessed and processed 400 MHz data show the presence of a collapse feature above and around a known 1970s burial with no similar collapse above the suspect location. In the saturated, clay-rich sediments of the site, 200 MHz data offered no advantage over 400 MHz data. Unprocessed 100 MHz data shows a series of multiples in the known burial with no similar features in the suspect location. Processed 100 MHz lines defined the shape of the collapse around the known burial to 2 m depth, together with the geometry of the platform (1 m depth) the gravedigger used in the 1970s to construct the site. In addition, processed 100 MHz data showed both the dielectric contrast in and internal reflection geometry of the soil imported above the known grave. Thus the sequence, geometry, difference in infill and infill direction of the grave was reconstructed 30 years after burial. The suspect site showed no evidence of shallow or deep inhumation. Subsequently, the missing person's body was found some distance from this site, vindicating the results and interpretation from ground-penetrating radar. The acquisition, processing, collapse feature and sequence stratigraphic interpretation of the known burial and empty (suspect) burial site may be useful proxies for other, similar investigations. GPR was used to evaluate this site within 3 h of the survey commencing, using unprocessed data. An additional day of processing established that the suspect body did not reside here, which was counter to police and community intelligence.<br/

Identification of nanoindentation-induced phase changes in silicon by in situ electrical characterization

In situ electrical measurements during nanoindentation of Czochralski grown p-type crystalline silicon (100) have been performed using a conducting diamond Berkovich indenter tip. Through-tip current monitoring with a sensitivity of ∼10pA and extraction of current-voltage curves at various points on the complete load-unload cycle have been used to track the phase transformations of silicon during the loading and unloading cycle. Postindent current-voltage curves prove to be extremely sensitive to phase changes during indentation, as well as to the final phase composition within the indented volume. For example, differences in the final structure are detected by current-voltage measurements even in an unloading regime in which only amorphous silicon is expected to form. The electrical measurements are interpreted with the aid of previously reported transmission electron microscopy and Raman microspectroscopy measurements.This work was funded by the Australian Research Council and WRiota Pty Ltd

Presentation on Peer Mentorship

According to Statistics Canada, over 2.1 million students enrolled in Canadian public universities and colleges for the 2017/2018 academic year (Stat Can, 2020). From a global perspective, this number is astronomical. Reports indicate that during this same time period, Canada was the most educated country in the world, with over 56-percent of adults aged 25-64 having been educated at the post-secondary level (CNBC, 2018). This, of course, is a great achievement for Canada, however one unfortunate biproduct of having such a large population of enrolled students is that the number of students who do not reach graduation is also relatively high. In 2018, Maclean’s ranked the top 49 universities in Canada by degree completion rates (Maclean’s, 2018). The magazine found that only six out of the 49 universities studied had degree completion rates of 80-percent or greater. Worse yet, the average completion rate for all 49 universities listed was only 71.3-percent. That remaining 28.7-percent represents hundreds of thousands of students annually who will experience the financial and psychosocial repercussions associated with ‘dropping out’. This is not only disadvantageous for these individuals, but for Canada’s workforce as well, due to the loss of many specialized workers. Peer mentorship programs have been presented as a cost-effective solution to this problem, however more research is required in terms of design, implementation, and evaluation of outcomes. Our study will seek to help close these gaps

Stop making sense: the politics of Aristophanic madness

This paper discusses the use of madness in Aristophanic Comedy, and in particular how it is used as a means of evaluating and interrogating political interventions. The well-known theme of madness in Aristophanes's Wasps provides the frame. Interpreting Philocleon's madness has proved problematic because the complexity of comic madness has been under-estimated. Against negative models of madness that dominate in tragedy and in political discourse, madness in comedy can be not only a means of interrogating ideological and political norms, but also a constructive and even heroic form of behavior, which draws on epic and religious associations. Bdelycleon's attempt to cure his father removes the positive substance and political value that anchors his father's insanity, which leads to the aporetic finale

Phase transformations induced by spherical indentation in ion-implanted amorphous silicon

The deformation behavior of ion-implanted (unrelaxed) and annealed ion-implanted (relaxed) amorphous silicon(a-Si) under spherical indentation at room temperature has been investigated. It has been found that the mode of deformation depends critically on both the preparation of the amorphous film and the scale of the mechanical deformation.Ex situmeasurements, such as Raman microspectroscopy and cross-sectional transmission electron microscopy, as well as in situ electrical measurements reveal the occurrence of phase transformations in all relaxed a-Si films. The preferred deformation mode of unrelaxed a-Si is plastic flow, only under certain high load conditions can this state of a-Si be forced to transform. In situ electrical measurements have revealed more detail of the transformation process during both loading and unloading. We have used ELASTICA simulations to obtain estimates of the depth of the metallic phase as a function of load, and good agreement is found with the experiment. On unloading, a clear change in electrical conductivity is observed to correlate with a “pop-out” event on load versus penetration curves

Effect of oxygen concentration on nanoindentation-induced phase transformations in ion-implanted amorphous silicon

The effect of the local oxygen concentration in ion-implanted amorphous Si (a-Si) on nanoindentation-inducedphase transformations has been investigated. Implantation of oxygen into the a-Sifilms has been used to controllably introduce an approximately constant concentration of oxygen, ranging from ∼10¹⁸ to ∼10²¹ cm⁻³, over the depth range of the phase transformed zones. Nanoindentation was performed under conditions that ensure a phase transformed zone composed completely of Si-III/XII in the nominally oxygen-free a-Si. The effect of the local oxygen concentration has been investigated by analysis of the unloading curves, Raman microspectroscopy, and cross-sectional transmission electron microscopy (XTEM). The formation of Si-III/XII is suppressed with increasing oxygen concentration, favoring a greater volume of a-Si within the zones. The Raman microspectroscopy and XTEM verify that the volume of Si-III/XII decreases with increasing O concentration. With the smaller volumes of Si-III/XII, the pop-out normally observed on load versus penetration depth curves during unloading decreases in magnitude, becoming more kinklike and is barely discernable at high concentrations of oxygen. The probability of forming any high pressure phases is reduced from 1 to ∼0.1 for a concentration of 10²¹ cm⁻³. We suggest that the bonding of O with Si reduces the formation of Si-III/XII during unloading through a similar mechanism to that of oxygen-retarded solid phase crystallization of a-Si.This project is funded by the Australian Research Council and WRiota Pty Ltd