Innovative methods for Burn-In related Stress Metrics Computation

Burn-In equipment provide both external and internal stress to the device under test. External stress, such as thermal stress, is provided by a climatic chamber or by socket-level local temperature forcing tools, and aims at aging the circuit material, while internal stress, such as electrical stress, consists in driving the circuit nodes to produce a high internal activity. To support internal stress, Burn-In test equipment is usually characterized by large memory capabilities required to store precomputed patterns that are then sequenced to the circuit inputs. Because of the increasing complexity and density of the new generations of SoCs, evaluating the effectiveness of the patterns applied to a Device under Test (DUT) through a simulation phase requires long periods of time. Moreover, topology-related considerations are becoming more and more important in modern high-density designs, so a way to include this information into the evaluation has to be devised. In this paper we show a feasible solution to this problem: the idea is to load in the DUT a pattern not by shifting inside of it a bit at a time but loading the entire pattern at once inside of it; this kind of procedure allows for conservative stress measures, thus it fits for stress analysis purposes. Moreover, a method to take the topology of the DUT into account when calculating the activity metrics is proposed, so to obtain stress metrics which can better represent the activity a circuit is subject to. An automotive chip accounting for about 20 million of gates is considered as a case of study. Resorting to it we show both the feasibility and the effectiveness of the proposed methodology

An Optimized Burn-In Stress Flow targeting Interconnections logic to Embedded Memories in Automotive Systems-on-Chip

The complexity of automotive Systems-on-a-Chip (SoCs) has enormously grown in the last decades. Today’s automotive SoCs are compelling due to technology improvements, different integration technologies, increased heterogeneity, and many available embedded memories. On balance, despite testing techniques that have been refined through years, traditional structural test methods, like scan and BIST, can cover a vast but not complete spectrum of all the possible defects. It appears that the divide-and-conquer approach founded on structural techniques may not be enough to reach every single element or to effectively stimulate the faulty behaviors that may show up during the lifetime of the device. Burn-In is widely used to reduce Infant Mortality, accelerating the evolution of weak points into defects via externally or internally induced stress.In this work, we focus on internal stress and present a generation strategy intended to automatically produce functional stress procedures for the Burn-In phase that exacerbate possible weak points which are likely to escape activation by structural tests, such that they more easily outbreak during the successive final test procedures. The proposed generation strategy primarily addresses the interconnections to embedded memories, which look challenging to stress by structural methods, including Logic and Memory BIST, and critical due to the integration of different technologies (i.e., logic gates and memory layout). In the considered test case, the proposed approach increases the average toggle activity by orders of magnitude with respect to Memory BIST. Furthermore, it provides a uniform distributed toggling activity.Results collected on an automotive SoC show how the stress provided by functional programs compares with the stress level provided by structural test methods measured in terms of toggling activity. The SpeedUp produced by the proposed procedure is 3.14X wrt to the MBIST executing the March C-algorithm