Growth Of InSb On GaAs Using InAISb Buffer Layers

Abstract We report the growth of InSb on GaAs using InAISb buffers of high interest for magnetic field sensors. We have grown samples by met&organic chemical vapor deposition consisting of -0,55pm thick InSb layers with resistive InAISb buffers on GaAs substrates with measured electron nobilities of -40,000 cm2/V.s. We have investigated the Inl.XAIXSbbuffers for compositions x<O.22 and have found that the best results are obtained near x=O.12 due to the tradeoff of buffer layer bandgap and lattice mismatch

Growth of InSb on GaAs Substrates Using InAlSb Buffers for Magnetic Field Sensor Applications

We report the growth of InSb on GaAs using InAlSb buffers of high interest for magnetic field sensors. We have grown samples by metal-organic chemical vapor deposition consisting of {approx}0.55{micro}m thick InSb layers with resistive InAlSb buffers on GaAs substrates with measured electron mobilities of {approx}40,000 cm{sup 2}/V.s. We have investigated the In{sub 1-x}Al{sub x}Sb buffers for compositions x {le} 0.22 and have found that the best results are obtained near x = 0.12 due to the tradeoff of buffer layer bandgap and lattice mismatch

Growth of InSb on GaAs Using InAlSb Buffer Layers

We report the growth of InSb on GaAs using InAlSb buffers of high interest for magnetic field sensors. We have grown samples by metal-organic chemical vapor deposition consisting of {approximately} 0.55 {micro}m thick InSb layers with resistive InAlSb buffers on GaAs substrates with measured electron nobilities of {approximately}40,000 cm{sup 2}/V.s. We have investigated the In{sub 1{minus}x}Al{sub x}Sb buffers for compositions x{le}0.22 and have found that the best results are obtained near x=0.12 due to the tradeoff of buffer layer bandgap and lattice mismatch

Growth of InSb on GaAs Substrates Using InAlSb Buffers for Magnetic Field Sensor Applications

We report the growth of InSb on GaAs using InAlSb buffers of high interest for magnetic field sensors. We have grown samples by metal-organic chemical vapor deposition consisting of {approx}0.55{micro}m thick InSb layers with resistive InAlSb buffers on GaAs substrates with measured electron mobilities of {approx}40,000 cm{sup 2}/V.s. We have investigated the In{sub 1-x}Al{sub x}Sb buffers for compositions x {le} 0.22 and have found that the best results are obtained near x = 0.12 due to the tradeoff of buffer layer bandgap and lattice mismatch

The Growth of InAsSb/InAs/InPSb/InAs Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition

We report on the metal-organic chemical vapor deposition (MOCVD) of strained layer superlattices (SLSs) of InAsSb/InAs/InPSb/InAs as well as mid-infrared optically pumped lasers grown using a high speed rotating disk react,or (RDR). The devices contain AIAsSb cladding layers and strained, type I, InAsSb/InAs/InPSb/InAs strained layer superlattice (SLS) active regions. By changing the layer thickness and composition of the SLS, we have prepared structures with low temperature (<20K) photoluminescence wavelengths ranging from 3.4 to 4.8 pm. The optical properties of the InAsSb/InPSb superlattices revealed an anomalous low energy transition that can be assigned to an antimony-rich, interfacial layer in the superlattice. This low energy transition can be eliminated by introducing a 1.0 nm InAs layer between the InAsSb and InPSb layers in the superlattice. An InAsSb/InAs/lnPSbflnAs SLS laser was grown on an InAs substrate with AlAs{sub 0.16}Sb{sub 0.84} cladding layers. A lasing threshold and spectrally narrowed laser emission were seen from 80 through 250 K, the maximum temperature where lasing occurred. The temperature dependence of the SLS laser threshold is described by a characteristic temperature, T{sub 0} = 39 K, from 80 to 200 K

Growth and Characterization of Quantum Dots and Quantum Dots Devices

Quantum dot nanostructures were investigated experimentally and theoretically for potential applications for optoelectronic devices. We have developed the foundation to produce state-of-the-art compound semiconductor nanostructures in a variety of materials: In(AsSb) on GaAs, GaSb on GaAs, and In(AsSb) on GaSb. These materials cover a range of energies from 1.2 to 0.7 eV. We have observed a surfactant effect in InAsSb nanostructure growth. Our theoretical efforts have developed techniques to look at the optical effects induced by many-body Coulombic interactions of carriers in active regions composed of quantum dot nanostructures. Significant deviations of the optical properties from those predicted by the ''atom-like'' quantum dot picture were discovered. Some of these deviations, in particular, those relating to the real part of the optical susceptibility, have since been observed in experiments