KNbO3 single crystal growth by the radio frequency heating Czochralski method

A radio frequency heating Czochralski technique to obtain single crystal KNbO3 is first presented. The technological parameters of KNbO3 crystal growth by the Czochralski technique and its pulling conditions were studied in detail. The experiments on second harmonic generation using 1.06 micrometer Nd:YAG laser in KNbO3 have been conducted. The second harmonic efficiency for upconversion of KNbO3 is found to be as high as that of NaBa2Nb5O15. An automatic scanning measurement for the optical homogeneity of KNbO crystal is also described. KNbO3 is revealed to be a potentially useful nonlinear material for optical device applications

Subthreshold rho contribution in J/psi decay to omega pion pion and Kaon anti-Kaon pion

We carry out a theoretical and Monte Carlo study on the $J/\psi$ decays into $\omega\pi\pi$ and $K\bar{K}\pi$ through intermediate subthreshold $\rho$ meson by using SU(3)-symmetric Lagrangian approach. It is found that the subthreshold $\rho$ contribution is not negligible and may have significant influence on partial wave analysis of resonances in these channels, especially near the $\omega \pi$ and $K \bar{K}$ thresholds.Comment: 12 pages, 5 figure

Ergodicity for the GI/G/1GI/G/1-type Markov Chain

Ergodicity is a fundamental issue for a stochastic process. In this paper, we refine results on ergodicity for a general type of Markov chain to a specific type or the $GI/G/1$-type Markov chain, which has many interesting and important applications in various areas. It is of interest to obtain conditions in terms of system parameters or the given information about the process, under which the chain has various ergodic properties. Specifically, we provide necessary and sufficient conditions for geometric, strong and polynomial ergodicity, respectively.Comment: 16 page

Understanding I=2 pi-pi Interaction

A correct understanding and description of the I=2 pi-pi S-wave interaction is important for the extraction of the I=0 pi-pi S-wave interaction from experimental data and for understanding the I=0 pi-pi S-wave interaction theoretically. With t-channel rho, f2(1270) exchange and the pi pi -> rho rho -> pi pi box diagram contribution, we reproduce the pi-pi isotensor S-wave and D-wave scattering phase shifts and inelasticities up to 2.2 GeV quite well in a K-matrix formalism.Comment: Talk given at Hadron 03: 10th International Conference on Hadron Spectroscopy, Aschaffenburg, Germany, 31 Aug - 6 Sep 200

Efficient and reliable hierarchical error estimates for the discretization error of elliptic obstacle problems

We present and analyze novel hierarchical a posteriori error estimates for self-adjoint elliptic obstacle problems. Our approach differs from straightforward, but nonreliable estimators by an additional extra term accounting for the deviation of the discrete free boundary in the localization step. We prove efficiency and reliability on a saturation assumption and a regularity condition on the underlying grid. Heuristic arguments suggest that the extra term is of higher order and preserves full locality. Numerical computations confirm our theoretical findings

Electronic States and Magnetism of Mn Impurities and Dimers in Narrow-Gap and Wide-Gap III-V Semiconductors

Electronic states and magnetic properties of single $Mn$ impurity and dimer doped in narrow-gap and wide-gap $III$-$V$ semiconductors have been studied systematically. It has been found that in the ground state for single $Mn$ impurity, $Mn$-$As(N)$ complex is antiferromagnetic (AFM) coupling when $p$-$d$ hybridization $V_{pd}$ is large and both the hole level $E_{v}$ and the impurity level $E_{d}$ are close to the midgap; or very weak ferromagnetic (FM) when $V_{pd}$ is small and both $E_{v}$ and $E_d$ are deep in the valence band. In $Mn$ dimer situation, the $Mn$ spins are AFM coupling for half-filled or full-filled $p$ orbits; on the contrast, the Mn spins are double-exchange-like FM coupling for any $p$-orbits away from half-filling. We propose the strong {\it p-d} hybridized double exchange mechanism is responsible for the FM order in diluted $III$-$V$ semiconductors