27 research outputs found

    Morphology controls the thermoelectric power factor of a doped semiconducting polymer.

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    The electrical performance of doped semiconducting polymers is strongly governed by processing methods and underlying thin-film microstructure. We report on the influence of different doping methods (solution versus vapor) on the thermoelectric power factor (PF) of PBTTT molecularly p-doped with F n TCNQ (n = 2 or 4). The vapor-doped films have more than two orders of magnitude higher electronic conductivity (σ) relative to solution-doped films. On the basis of resonant soft x-ray scattering, vapor-doped samples are shown to have a large orientational correlation length (OCL) (that is, length scale of aligned backbones) that correlates to a high apparent charge carrier mobility (μ). The Seebeck coefficient (α) is largely independent of OCL. This reveals that, unlike σ, leveraging strategies to improve μ have a smaller impact on α. Our best-performing sample with the largest OCL, vapor-doped PBTTT:F4TCNQ thin film, has a σ of 670 S/cm and an α of 42 μV/K, which translates to a large PF of 120 μW m-1 K-2. In addition, despite the unfavorable offset for charge transfer, doping by F2TCNQ also leads to a large PF of 70 μW m-1 K-2, which reveals the potential utility of weak molecular dopants. Overall, our work introduces important general processing guidelines for the continued development of doped semiconducting polymers for thermoelectrics

    Tethered tertiary amines as solid-state n-type dopants for solution-processable organic semiconductors

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    A scarcity of stable n-type doping strategies compatible with facile processing has been a major impediment to the advancement of organic electronic devices. Localizing dopants near the cores of conductive molecules can lead to improved efficacy of doping. We and others recently showed the effectiveness of tethering dopants covalently to an electron-deficient aromatic molecule using trimethylammonium functionalization with hydroxide counterions linked to a perylene diimide core by alkyl spacers. In this work, we demonstrate that, contrary to previous hypotheses, the main driver responsible for the highly effective doping observed in thin films is the formation of tethered tertiary amine moieties during thin film processing. Furthermore, we demonstrate that tethered tertiary amine groups are powerful and general n-doping motifs for the successful generation of free electron carriers in the solid-state, not only when coupled to the perylene diimide molecular core, but also when linked with other small molecule systems including naphthalene diimide, diketopyrrolopyrrole, and fullerene derivatives. Our findings help expand a promising molecular design strategy for future enhancements of n-type organic electronic materials

    Power Factor Enhancement in Solution‐Processed Organic n‐Type Thermoelectrics Through Molecular Design

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    A new class of high‐performance n‐type organic thermoelectric materials, self‐doping perylene diimide derivatives with modified side chains, is reported. These materials achieve the highest n‐type thermoelectric performance of solution‐processed organic materials reported to date, with power factors as high as 1.4 μW/mK^2. These results demonstrate that molecular design is a promising strategy for enhancing organic thermoelectric performance

    Increasing the Thermoelectric Power Factor of a Semiconducting Polymer by Doping from the Vapor Phase

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    We demonstrate how processing methods affect the thermoelectric properties of thin films of a high mobility semiconducting polymer, PBTTT. Two doping methods were compared: vapor deposition of (tridecafluoro-1,1,2,2-tetrahydrooctyl)­trichlorosilane (FTS) or immersion in a solvent containing 4-ethylbenzenesulfonic acid (EBSA). Thermally annealed, thin films doped by FTS deposited from vapor yield a high Seebeck coefficient (α) at high electronic conductivity (σ) and, in turn, a large power factor (PF = α<sup>2</sup>σ) of ∼100 μW m<sup>–1</sup> K<sup>–2</sup>. The FTS-doped films yield α values that are a factor of 2 higher than the EBSA-doped films at comparable high value of σ. A detailed analysis of X-ray scattering experiments indicates that perturbations in the local structure from either dopant are not significant enough to account for the difference in α. Therefore, we postulate that an increase in α arises from the entropic vibrational component of α or changes in scattering of carriers in disordered regions in the film
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