Indium Phosphide Bismide

Indium phosphide bismide is a new member to the dilute bismide family. Since the first synthesis by molecular beam epitaxy (MBE) in 2013, it has cut a figure for its abnormal properties comparing with other dilute bismides. Bismuth (Bi) incorporation is always a difficulty for epitaxial growth of dilute. In this chapter, it shows how to regulate MBE growth parameters and their influence on Bi incorporation in InP1−xBix. Structural, electronic and optical properties are systematically reviewed. Thermal annealing to study Bi thermal stability and its effect on physical properties is performed. InP1−xBix shows strong and broad photoluminescence at room temperature, which is a potential candidate for fabricating super-luminescence diodes applied for enhancing spatial resolution in optical coherence tomography. Quaternary phosphide bismide, including InGaPBi and InAlPBi, is briefly introduced in this chapter

Energy and Environmental Implications of Automated Vehicles Under Mixed Autonomy Traffic Environment

With the evolution of technologies related to automated vehicles (AVs), vehicles with automation are increasingly approaching large-scale deployment nowadays. This research concentrates on mixed traffic scenarios in the near future, which capitalize on the implications of AVs on the transportation system and environment. How to co-exist with AVs in a complex environment is quite an unfamiliar challenge for human drivers of conventional vehicles. To conquer the difficulty, we investigate the behavioral response of human-driven vehicles (HVs) to AVs in multiple mixed traffic situations based on the real-world trajectory dataset and propose the driving characteristic indicator based on machine learning to conduct the quantitative comparison of different carfollowing (CF) behaviors. Additionally, to precisely replicate the driving features of HVs and longitudinal control of AVs in mixed traffic, a microscopic behavior modeling framework consisting of model-based and data-driven CF strategies is designed, which accurately reproduces the sophisticated microscopic behavior and maintains the interpretability of the intrinsic controller mechanism. Furthermore, simulation experiments on a real-world urban-scale network in Suzhou, China are performed to thoroughly evaluate the implications of widespread implementation of AVs under different market penetration rates (MPRs). The result indicates that the low penetration rate may exert adverse effects on the mixed traffic environment

Anomalous photoluminescence in InP1-xBix

Low temperature photoluminescence (PL) from InP1-xBix thin films with Bi concentrations in the 0-2.49% range reveals anomalous spectral features with strong and very broad (linewidth of 700 nm) PL signals compared to other bismide alloys. Multiple transitions are observed and their energy levels are found much smaller than the band-gap measured from absorption measurements. These transitions are related to deep levels confirmed by deep level transient spectroscopy, which effectively trap free holes and enhance radiative recombination. The broad luminescence feature is beneficial for making super-luminescence diodes, which can theoretically enhance spatial resolution beyond 1 ?m in optical coherent tomography (OCT)

Nanoscale distribution of Bi atoms in InP1-xBix

The nanoscale distribution of Bi in InPBi is determined by atom probe tomography and transmission electron microscopy. The distribution of Bi atoms is not uniform both along the growth direction and within the film plane. A statistically high Bi-content region is observed at the bottom of the InPBi layer close to the InPBi/InP interface. Bi-rich V-shaped walls on the (−111) and (1–11) planes close to the InPBi/InP interface and quasi-periodic Bi-rich nanowalls in the (1–10) plane with a periodicity of about 100 nm are observed. A growth model is proposed to explain the formation of these unique Bi-related nanoscale features. These features can significantly affect the deep levels of the InPBi epilayer. The regions in the InPBi layer with or without these Bi-related nanostructures exhibit different optical properties

May Measurement Month 2018: a pragmatic global screening campaign to raise awareness of blood pressure by the International Society of Hypertension

Aims Raised blood pressure (BP) is the biggest contributor to mortality and disease burden worldwide and fewer than half of those with hypertension are aware of it. May Measurement Month (MMM) is a global campaign set up in 2017, to raise awareness of high BP and as a pragmatic solution to a lack of formal screening worldwide. The 2018 campaign was expanded, aiming to include more participants and countries. Methods and results Eighty-nine countries participated in MMM 2018. Volunteers (≥18 years) were recruited through opportunistic sampling at a variety of screening sites. Each participant had three BP measurements and completed a questionnaire on demographic, lifestyle, and environmental factors. Hypertension was defined as a systolic BP ≥140 mmHg or diastolic BP ≥90 mmHg, or taking antihypertensive medication. In total, 74.9% of screenees provided three BP readings. Multiple imputation using chained equations was used to impute missing readings. 1 504 963 individuals (mean age 45.3 years; 52.4% female) were screened. After multiple imputation, 502 079 (33.4%) individuals had hypertension, of whom 59.5% were aware of their diagnosis and 55.3% were taking antihypertensive medication. Of those on medication, 60.0% were controlled and of all hypertensives, 33.2% were controlled. We detected 224 285 individuals with untreated hypertension and 111 214 individuals with inadequately treated (systolic BP ≥ 140 mmHg or diastolic BP ≥ 90 mmHg) hypertension. Conclusion May Measurement Month expanded significantly compared with 2017, including more participants in more countries. The campaign identified over 335 000 adults with untreated or inadequately treated hypertension. In the absence of systematic screening programmes, MMM was effective at raising awareness at least among these individuals at risk

Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the k center dot p Model

Optical gains of type-II InGaAs/GaAsBi quantum wells (QWs) with W, N, and M shapes are analyzed theoretically for near-infrared laser applications. The bandgap and wave functions are calculated using the self-consistent k . p Hamiltonian, taking into account valence band mixing and the strain effect. Our calculations show that the M-shaped type-II QWs are a promising structure for making 1.3 mu m lasers at room temperature because they can easily be used to obtain 1.3 mu m for photoluminescence with a proper thickness and have large wave-function overlap for high optical gain