Rashba-splitting-induced topological flat band detected by anomalous resistance oscillations beyond the quantum limit in ZrTe5_5

Topological flat band, on which the kinetic energy of topological electrons is quenched, represents a platform for investigating the topological properties of correlated systems. Recent experimental studies on flattened electronic bands have mainly concentrated on 2-dimensional materials created by van der Waals heterostructure-based engineering. Here, we report the observation of a topological flat band formed by polar-distortion-assisted Rashba splitting in a 3-dimensional Dirac material ZrTe$_5$. The polar distortion and resulting Rashba splitting on the band are directly detected by torque magnetometry and the anomalous Hall effect, respectively. The local symmetry breaking further flattens the band, on which we observe resistance oscillations beyond the quantum limit. These oscillations follow the temperature dependence of the Lifshitz-Kosevich formula but are evenly distributed in B instead of 1/B in high magnetic fields. Furthermore, the cyclotron mass anomalously gets enhanced about 10$^2$ times at field ~20 T. These anomalous properties of oscillations originate from a topological flat band with quenched kinetic energy. The topological flat band, realized by polar-distortion-assisted Rashba splitting in the 3-dimensional Dirac system ZrTe$_5$, signifies an intrinsic platform without invoking moir\'e or order-stacking engineering, and also opens the door for studying topologically correlated phenomena beyond the dimensionality of two.Comment: 32 pages, 11 figures; Version of original submissio

Probing the fractional quantum Hall phases in valley-layer locked bilayer MoS2_{2}

Semiconducting transition-metal dichalcogenides (TMDs) exhibit high mobility, strong spin-orbit coupling, and large effective masses, which simultaneously leads to a rich wealth of Landau quantizations and inherently strong electronic interactions. However, in spite of their extensively explored Landau levels (LL) structure, probing electron correlations in the fractionally filled LL regime has not been possible due to the difficulty of reaching the quantum limit. Here, we report evidence for fractional quantum Hall (FQH) states at filling fractions 4/5 and 2/5 in the lowest LL of bilayer MoS$_{2}$, manifested in fractionally quantized transverse conductance plateaus accompanied by longitudinal resistance minima. We further show that the observed FQH states sensitively depend on the dielectric and gate screening of the Coulomb interactions. Our findings establish a new FQH experimental platform which are a scarce resource: an intrinsic semiconducting high mobility electron gas, whose electronic interactions in the FQH regime are in principle tunable by Coulomb-screening engineering, and as such, could be the missing link between atomically thin graphene and semiconducting quantum wells.Comment: 10 pages, 4 figure

Probing the fractional quantum Hall phases in valley-layer locked bilayer MoS2

Semiconducting transition-metal dichalcogenides (TMDs) exhibit high mobility, strong spin-orbit coupling, and large effective masses, which simultaneously leads to a rich wealth of Landau quantizations and inherently strong electronic interactions. However, in spite of their extensively explored Landau levels (LL) structure, probing electron correlations in the fractionally filled LL regime has not been possible due to the difficulty of reaching the quantum limit. Here, we report evidence for fractional quantum Hall (FQH) states at filling fractions 4/5 and 2/5 in the lowest LL of bilayer MoS 2 , manifested in fractionally quantized transverse conductance plateaus accompanied by longitudinal resistance minima. We further show that the observed FQH states sensitively depend on the dielectric and gate screening of the Coulomb interactions. Our findings establish a new FQH experimental platform which are a scarce resource: an intrinsic semiconducting high mobility electron gas, whose electronic interactions in the FQH regime are in principle tunable by Coulomb-screening engineering, and as such, could be the missing link between atomically thin graphene and semiconducting quantum wells