Measurement of spontaneous emission from a two-dimensional photonic band gap defined microcavity at near-infrared wavelengths

An active, photonic band gap-based microcavity emitter in the near infrared is demonstrated. We present direct measurement of the spontaneous emission power and spectrum from a microcavity formed using a two-dimensional photonic band gap structure in a half wavelength thick slab waveguide. The appearance of cavity resonance peaks in the spectrum correspond to the photonic band gap energy. For detuned band gaps, no resonances are observed. For devices with correctly tuned band gaps, a two-time enhancement of the extraction efficiency was demonstrated compared to detuned band gaps and unpatterned material

Photonic bandgap disk laser

A two-dimensional photonic crystal defined hexagonal disk laser which relies on Bragg reflection rather than the total internal reflection as in traditional microdisk lasers is described. The devices are fabricated using a selective etch to form free standing membranes suspended in air. Room temperature lasing at 1650nm for a 150nm thick, ~15μm wide cavity fabricated in InP/GaAsP is demonstrated with pulsed optical pumping

Lasers incorporating 2D photonic bandgap mirrors

Semiconductor lasers incorporating a 2D photonic lattice as a one end mirror in a Fabry-Perot cavity are demonstrated. The photonic lattice is a 2D hexagonal close-packed array with a lattice constant of 220 nm. Pulsed threshold currents of 110 mA were observed from a 180 μm laser

Two-dimensional photonic band-gap mirrors at 850 and 980 nm

Summary form only given. Photonic band-gap (PBG) crystals can be fabricated in semiconductor devices through the etching of patterns of holes in the device, resulting in a periodic dielectric structure. One of the more practical uses of photonic crystals in optoelectronic devices is for thin, high-reflectivity mirrors. The use of hexagonal arrays of etched circular holes results in a 2-D photonic band-gap mirror that can be tuned to a specific wavelength by varying the hole radius and the lattice spacing. 2-D mirror characterization is performed by evaluating the light emission from an active waveguide

Lasers incorporating two-dimensional photonic crystal mirrors

Photonic bandgap crystals are expected to be of use in defining microcavities for modifying spontaneous emission and as highly reflective mirrors. There are several reports of microfabricating one-dimensional structure. Here, we describe the incorporation of a microfabricated two-dimensional photonic lattice in an edge-emitting semiconductor laser structure. We demonstrate laser operation in a cavity formed between a cleaved facet and a microfabricated periodic lattice

Phonon laser action in a tunable, two-level photonic molecule

The phonon analog of an optical laser has long been a subject of interest. We demonstrate a compound microcavity system, coupled to a radio-frequency mechanical mode, that operates in close analogy to a two-level laser system. An inversion produces gain, causing phonon laser action above a pump power threshold of around 50 $\mu$W. The device features a continuously tunable, gain spectrum to selectively amplify mechanical modes from radio frequency to microwave rates. Viewed as a Brillouin process, the system accesses a regime in which the phonon plays what has traditionally been the role of the Stokes wave. For this reason, it should also be possible to controllably switch between phonon and photon laser regimes. Cooling of the mechanical mode is also possible.Comment: 4 pages, 4 figure

Finite-difference time-domain calculation of spontaneous emission lifetime in a microcavity

We developed a general numerical method to calculate the spontaneous emission lifetime in an arbitrary microcavity, using a finite-difference time-domain algorithm. For structures with rotational symmetry we also developed a more efficient but less general algorithm. To simulate an open radiation problem, we use absorbing boundaries to truncate the computational domain. The accuracy of this method is limited only by numerical error and finite reflection at the absorbing boundaries. We compare our result with cases that can be solved analytically and find excellent agreement. Finally, we apply the method to calculate the spontaneous emission lifetime in a slab waveguide and in a dielectric microdisk, respectively

Chemically etched ultrahigh-Q wedge-resonator on a silicon chip

Ultrahigh-Q optical resonators are being studied across a wide range of fields, including quantum information, nonlinear optics, cavity optomechanics and telecommunications. Here, we demonstrate a new resonator with a record Q-factor of 875 million for on-chip devices. The fabrication of our device avoids the requirement for a specialized processing step, which in microtoroid resonators8 has made it difficult to control their size and achieve millimetre- and centimetre-scale diameters. Attaining these sizes is important in applications such as microcombs and potentially also in rotation sensing. As an application of size control, stimulated Brillouin lasers incorporating our device are demonstrated. The resonators not only set a new benchmark for the Q-factor on a chip, but also provide, for the first time, full compatibility of this important device class with conventional semiconductor processing. This feature will greatly expand the range of possible ‘system on a chip’ functions enabled by ultrahigh-Q devices

Wavelength- and material-dependent absorption in GaAs and AlGaAs microcavities

The quality factors of modes in nearly identical GaAs and Al_{0.18}Ga_{0.82}As microdisks are tracked over three wavelength ranges centered at 980 nm, 1460 nm, and 1600 nm, with quality factors measured as high as 6.62x10^5 in the 1600-nm band. After accounting for surface scattering, the remaining loss is due to sub-bandgap absorption in the bulk and on the surfaces. We observe the absorption is, on average, 80 percent greater in AlGaAs than in GaAs and in both materials is 540 percent higher at 980 nm than at 1600nm.Comment: 4 pages, 2 figures, 1 table, minor changes to disucssion of Qrad and Urbach tai