Highly nondegenerate four-wave mixing efficiency of an asymmetric coupled quantum well structure

An asymmetric coupled quantum well structure is theoretically investigated as a means of tailoring the conversion efficiency of the four-wave mixing process at terahertz detuning rates. In this structure, a coherent electronic oscillation between the two wells can be excited that introduces a resonance peak in the four-wave mixing frequency response. A calculation based on the density matrix formalism shows that an increase in the power conversion efficiency on the order of 10 dB can be attained at the selected resonance frequency for low temperature operation. Finally, we propose a novel technique for exciting the interwell oscillations that takes advantage of the polarization dependence of the interband optical transitions in alternating strain quantum wells

Optical properties of tensilely strained Ge nanomembranes

Group-IV semiconductors, which provide the leading materials platform of micro- electronics, are generally unsuitable for light emitting device applications because of their indirect- bandgap nature. This property currently limits the large-scale integration of electronic and photonic functionalities on Si chips. The introduction of tensile strain in Ge, which has the effect of lowering the direct conduction-band minimum relative to the indirect valleys, is a promising approach to address this challenge. Here we review recent work focused on the basic science and technology of mechanically stressed Ge nanomembranes, i.e., single-crystal sheets with thicknesses of a few tens of nanometers, which can sustain particularly large strain levels before the onset of plastic deformation. These nanomaterials have been employed to demonstrate large strain-enhanced photoluminescence, population inversion under optical pumping, and the formation of direct-bandgap Ge. Furthermore, Si-based photonic-crystal cavities have been developed that can be combined with these Ge nanomembranes without limiting their mechanical flexibility. These results highlight the potential of strained Ge as a CMOS-compatible laser material, and more in general the promise of nanomembrane strain engineering for novel device technologies.The Ge nanomembrane fabrication and characterization efforts were supported initially by DOE under Grant DE-FG02-03ER46028, and subsequently by AFOSR under Grant FA9550-14-1-0361. The development of the photonic-crystal cavities was supported by NSF under Grant ECCS-1308534. The initial photoluminescence studies were funded by NSF under Grant DMR-0907296. The contribution from several students and research scientists involved in this research at Boston University and the University of Wisconsin-Madison (including Cicek Boztug, Francesca Cavallo, Feng Chen, Xiaorui Cui, RB Jacobson, Debbie Paskiewicz, Jose Sanchez-Perez, Pornsatit Sookchoo, Faisal Sudradjat, Xiaowei Wang, and Jian Yin) is also gratefully acknowledged. (DE-FG02-03ER46028 - DOE; FA9550-14-1-0361 - AFOSR; ECCS-1308534 - NSF; DMR-0907296 - NSF)Published versio

Four-wave mixing and generation of terahertz radiation in an alternating-strain coupled quantum-well structure

We propose a scheme for exciting steady-state tunneling oscillations of an electronic wave packet in a semiconductor coupled quantum-well structure with strain of the opposite polarity in the two wells. A detailed study of the four-wave mixing process in this structure is then presented, based on the density matrix formalism. Our results show that a resonance peak is introduced in the four-wave mixing frequency response at the tunneling frequency, leading to a significant enhancement in the wavelength conversion efficiency for low temperature operation. Furthermore, we consider this structure under the same excitation condition as a potential source of coherent radiation in, the terahertz frequency band

One-dimensional carbon nanostructures for terahertz electron-beam radiation

One-dimensional carbon nanostructures such as nanotubes and nanoribbons can feature near-ballistic electronic transport over micron-scale distances even at room temperature. As a result, these materials provide a uniquely suited solid-state platform for radiation mechanisms that so far have been the exclusive domain of electron beams in vacuum. Here we consider the generation of terahertz light based on two such mechanisms, namely, the emission of cyclotronlike radiation in a sinusoidally corrugated nanowire (where periodic angular motion is produced by the mechanical corrugation rather than an externally applied magnetic field), and the Smith-Purcell effect in a rectilinear nanowire over a dielectric grating. In both cases, the radiation properties of the individual charge carriers are investigated via full-wave electrodynamic simulations, including dephasing effects caused by carrier collisions. The overall light output is then computed with a standard model of charge transport for two particularly suitable types of carbon nanostructures, i.e., zigzag graphene nanoribbons and armchair single-wall nanotubes. Relatively sharp emission peaks at geometrically tunable terahertz frequencies are obtained in each case. The corresponding output powers are experimentally accessible even with individual nanowires, and can be scaled to technologically significant levels using array configurations. These radiation mechanisms therefore represent a promising paradigm for light emission in condensed matter, which may find important applications in nanoelectronics and terahertz photonics.DMR-1308659/National Science Foundationhttp://ultra.bu.edu/papers/Tantiwanichapan-2016-PRB-CNT-THz.pd

Ultrafast WDM logic

Ultrafast all-optical logic gates that accept optical inputs in which wavelength designates bit position within the overall byte are proposed and demonstrated. Four-wave mixing is shown to provide a conditional test function that can be used to construct any multi-input logic gate. Polarization provides the logic state for each bit. Implementations that use semiconductor optical amplifiers as the four-wave mixing medium can be monolithic and compact

Spectral logic gates for byte-wide WDM signal processing

We propose a new class of all-optical logic gates based on four-wave mixing, designed to operate on multiwavelength input signals. We demonstrate the XOR function with two 2.5-Gbit/s modulated input signals

Four-wave mixing mediated by the capture of electrons and holes in semiconductor quantum-well laser amplifiers

An experimental technique based on frequency-resolved four-wave mixing is proposed for the investigation of phonon-assisted capture of electrons and holes in electrically pumped semiconductor quantum wells. We show how this technique can be used to directly measure the intrinsic capture lifetime, with no need for involved numerical fits. We also present experimental results from an application of the technique to a multiquantum-well semiconductor optical amplifier. The possible impact of phase matching on the results is discussed

Measurement of the stimulated carrier lifetime in semiconductor optical amplifiers by four-wave mixing of polarized ASE noise

We present a simple experiment aimed at measuring the stimulated carrier lifetime in semiconductor optical amplifiers (SOA's). The technique relies on polarization-resolved nearly degenerate four-wave mixing (FWM) of a laser source with an amplified spontaneous emission (ASE) noise source. The method can quickly characterize the bandwidth performance of active layers for application in a cross-gain or cross-phase wavelength converter

Polarization-dependent optical nonlinearities of multiquantum-well laser amplifiers studied by four-wave mixing

We present a detailed study of the polarization properties of four-wave mixing in multiquantum-well (MQW) semiconductor optical amplifiers (SOA's). In particular, the polarization selection rules relevant to all processes contributing to the generation of the four-wave mixing signal are rigorously derived and discussed. We then show the importance of these results in applications where four-wave mixing is used as a spectroscopic tool to study the optical nonlinearities of semiconductor gain media. For illustration, we demonstrate two novel applications of polarization-resolved four-wave mixing. The first is a new technique for measuring the recombination lifetime in SOA's, based on mixing of a pump wave with polarized amplified spontaneous emission noise. In the second, we use the same polarization selection rules to measure the interwell transport lifetime in alternating-strain MQW amplifiers. Finally, we also discuss the possibility of studying the dynamics of the optically induced phase coherence between spin-degenerate states

Four-wave mixing mediated by the capture of carriers in semiconductor quantum-well amplifiers

We demonstrate a technique to measure the intrinsic capture lifetime, using frequency-resolved four wave mixing (FWM). The work is based on a frequency-domain measurement of the response function associated with the transfer of a modulation from three-dimensional states above the QW to the quantum-confined two dimensional states. The principle of the experiment is shown using two DFB semiconductor quantum well lasers