Demultiplexing of 80-Gb/s Pulse-Position Modulated Data With an Ultrafast Nonlinear Interferometer

Abstract-Pulse-position modulation may be used to reduce patterning effects arising from gain saturation in all-optical switches employing semiconductor optical amplifiers. We present a novel technique for return-to-zero pulse-position modulation of data suitable for use in optical time-division-multiplexed (OTDM) networks. We demonstrate two methods for all-optical demultiplexing of a pulse-position modulated data stream using an ultrafast nonlinear interferometer. Errorfree operation is obtained for demultiplexing from OTDM data rates as high as 80 Gb/s with control pulse energies of 25 fJ

POWER2008-60167 VERIFYING SUITABILITY FOR SERVICE WITH EMI DIAGNOSTICS

ABSTRACT This paper provides examples of conditions found with nuclear plant electrical equipment by the application of EMI (electromagnetic interference) Diagnostics. This is an on-line test that can detect a wide variety of defects in motors, generators, power cables transformers and isolated phase bus

Wavelength Conversion of a 40-Gb/s NRZ Signal Across the Entire C-Band by an Asymmetric Sagnac Loop

Abstract-A compact integrated all-optical wavelength converter based on an asymmetric Sagnac loop is demonstrated. We show that a 40-Gb/s nonreturn-to-zero data signal can be converted over the entire -band employing an asymmetric Sagnac loop. Compared to the back-to-back configuration, a receiver sensitivity power penalty of less then 2.1 dB is measured for both up-and down-conversion

Leakage current modeling of test structures for characterization of dark current in CMOS image sensors

Abstract-In this paper, we present an extensive study of leakage current mechanisms in diodes to model the dark current of various pixel architectures for active pixel CMOS image sensors. Dedicated test structures made in 0.35-m CMOS have been investigated to determine the various contributions to the leakage current. Three pixel variants with different photo diodes-n + /pwell, n + /nwell/psubstrate and p + /nwell/p-substrate-are described. We found that the main part of the total dark current is coming from the depletion of the photodiode edge at the surface. Furthermore, the source of the reset transistor contributes seriously to the total leakage current of a pixel. From the investigation of reverse current-voltage ( -) characteristics, temperature dependencies of leakage current, and device simulations we found that for a wide depletion, such as n-well/p-well, thermal Shockley-Read-Hall generation is the main leakage mechanism, while for a junction with higher dope concentrations, such as n + /p-well or p + /n-well, tunneling and impact ionization are the dominant mechanisms

Wavelength conversion of a 40-Gb/s NRZ signal across the entire C-band by an asymmetric Sagnac loop Citation for published version (APA): Wavelength Conversion of a 40-Gb/s NRZ Signal Across the Entire C-Band by an Asymmetric Sagnac Loop

Abstract-A compact integrated all-optical wavelength converter based on an asymmetric Sagnac loop is demonstrated. We show that a 40-Gb/s nonreturn-to-zero data signal can be converted over the entire -band employing an asymmetric Sagnac loop. Compared to the back-to-back configuration, a receiver sensitivity power penalty of less then 2.1 dB is measured for both up-and down-conversion