Fast deposition of highly crystallized microcrystalline silicon film using microwave plasma for thin film solar cells

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High-rate synthesis of microcrystalline silicon films using high-density SiH4/H2 microwave plasma

A high electron density (> 1011 cm− 3) and low electron temperature (1–2 eV) plasma is produced by using a microwave plasma source utilizing a spoke antenna, and is applied for the high-rate synthesis of high quality microcrystalline silicon (μc-Si) films. A very fast deposition rate of 65 Å/s is achieved at a substrate temperature of 150 °C with a high Raman crystallinity and a low defect density of (1–2) × 1016 cm− 3. Optical emission spectroscopy measurements reveal that emission intensity of SiH and intensity ratio of Hα/SiH are good monitors for film deposition rate and film crystallinity, respectively. A high flux of film deposition precursor and atomic hydrogen under a moderate substrate temperature condition is effective for the fast deposition of highly crystallized μc-Si films without creating additional defects as well as for the improvement of film homogeneity

High rate growth highly crystallized microcrystalline silicon films using SiH4/H2 high-density microwave plasma

The plasma parameter for fast deposition of highly crystallized microcrystalline silicon (μc-Si) films with low defect density is presented using the high-density and low-temperature microwave plasma (MWP) of a SiH4-H2 mixture. A very high deposition rate of ~ 65 Å/s has been achieved at SiH4 concentration of 67% diluted in H2 with high Raman crystallinity Ic / Iα > 3 and low defect density of 1-2 x 10^16cm^- 3 by adjusting the plasma condition. Contrary to the conventional rf plasma, the defect density of the μc-Si films strongly depend on substrate temperature Ts and it increased with increasing Ts despite Ts below 300 °C, suggesting that the real surface temperature at the growing surface was higher than the monitored value. The sufficient supply of deposition precursors such as SiH3 at the growth surface under an appropriate ion bombardment was effective for the fast deposition of highly crystallized μc-Si films as well as the suppression of the incubation and transition layers at the initial growth stage

Microwave plasma CVD of Si:H:Cl films from chlorinated materials for large area electronics

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Plasma parameters for fast deposition of highly crystallized μc-Si films using MWPE-CVD

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Synthesis of microcrystalline Si films using the 2-step growth by the high density micro-wave plasma

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Toward the fast deposition of highly crystallized microcrystalline silicon films with low defect density for Si thin film solar cells

Abstract not available

Toward the fast deposition of highly crystallized microcrystalline silicon films with low defect density for Si thin film solar cells

In this study, employing a high-density, low-temperature SiH4-H2 mixture microwave plasma, we investigate the influence of source gas supply configuration on deposition rate and structural properties of microcrystalline silicon (μc-Si) films, and demonstrate the plasma parameters for fast deposition of highly crystallized μc-Si films with low defect density. A fast deposition rate of 65 Å/s has been achieved for a SiH4 concentration of 67% diluted in H2 with a high Raman crystallinity of Xc > 65% and a low defect density of (1-2) x 1016 cm^-3 by adjusting source gas supply configuration and plasma conditions. A sufficient supply of deposition precursors, such as SiH3, as well as atomic hydrogen H on film growing surface is effective for the high-rate synthesis of highly crystallized μc-Si films, for the reduction in defect density, and for the improvement in film homogeneity and compactability. A preliminary result of p-i-n structure μc-Si thin-film solar cells using the resulting μc-Si films as an intrinsic absorption layer is presented

Fast deposition of crystalline Si films from SiH2Cl2 utilizing the high-density microwave plasma

Abstract not available

Synthesis of highly crystallized Si:H:Cl films using SiH2Cl2/H2 high-density microwave plasma for Si thin-film solar cells

Abstract not available