A millimeter-wave slot-V antenna

A V-shaped slot antenna built on a dielectric substrate is presented. The antenna is a nonresonant, traveling-wave design, with a predicted impedance in the range from 50 Ω to 80 Ω. Calculations indicate that this antenna should have a gain of 15 dB with 3 dB beamwidths of 10° in the H plane and 64° in the E plane. Pattern measurements at 90 GHz support the theory. It should be possible to equalize the two beamwidths with a cylindrical lens. The broad bandwidth and high gain characteristics make the slot- V a good candidate for picosecond optoelectronic measurements. Fabrication is simple, and it should be possible to make this antenna at wavelengths as short as 10 μm with conventional photolithography

Properties of periodic arrays of symmetric complementary structuresand their application to grid amplifiers

Deschamps' theorem for n-terminal complementary structures is reviewed. An extension to Deschamps' theorem for a class of three-terminal bounded structures with one axis of symmetry is presented. It is shown that, for these structures, a simple relationship between the impedances of the odd mode of the original structure and the admittances of the even mode of the complementary structure exists, and that these modes are orthogonal. Using this, a self-complementary grid amplifier is designed and the measured results are presented

Self-Complementary Structures and Their Application in Grid Amplifiers

An extension to Deschamps’s theorem for a class of 3-terminal bounded structures with one axis of symmetry is presented. For these structures, a simple relationship between the impedance matrix of the odd mode excitation of the original structure and the admittance matrix of the even mode excitation of its complement exists. Using this, a self-complementary grid amplifier is designed and the measured results are presented

Stability of grid amplifiers

We present a stability model for quasi-optical grid amplifiers. This model is useful for predicting and suppressing the common-mode oscillations that often occur in amplifier grids. Three stabilization techniques will be discussed. The first technique uses a capacitor to stabilize the grid. The second approach employs resistance to suppress the oscillations. The final technique stabilizes the grid by reducing the on-chip common-mode resistance, allowing greatly increased amplifier efficiencies. Experimental evidence will be presented to confirm the validity of our stability model

A 100-Element MODFET Grid Amplifier

A 100-element quasi-optical amplifier is presented. The active devices are custom-fabricated modulation-doped field-effect transistors (MODFETs). Common-mode oscillations were suppressed using resistors in the input gate leads. The grid has 9 dB of gain at 10.1 GHz. The 3-dB bandwidth is 1.2 GHz. We present a model for the gain of the grid versus frequency and compare measurement with theory

Miniaturized Ka-Band Dual-Channel Radar

Smaller (volume, mass, power) electronics for a Ka-band (36 GHz) radar interferometer were required. To reduce size and achieve better control over RFphase versus temperature, fully hybrid electronics were developed for the RF portion of the radar s two-channel receiver and single-channel transmitter. In this context, fully hybrid means that every active RF device was an open die, and all passives were directly attached to the subcarrier. Attachments were made using wire and ribbon bonding. In this way, every component, even small passives, was selected for the fabrication of the two radar receivers, and the devices were mounted relative to each other in order to make complementary components isothermal and to isolate other components from potential temperature gradients. This is critical for developing receivers that can track each other s phase over temperature, which is a key mission driver for obtaining ocean surface height. Fully hybrid, Ka-band (36 GHz) radar transmitter and dual-channel receiver were developed for spaceborne radar interferometry. The fully hybrid fabrication enables control over every aspect of the component selection, placement, and connection. Since the two receiver channels must track each other to better than 100 millidegrees of RF phase over several minutes, the hardware in the two receivers must be "identical," routed the same (same line lengths), and as isothermal as possible. This level of design freedom is not possible with packaged components, which include many internal passive, unknown internal connection lengths/types, and often a single orientation of inputs and outputs

Gain and Stability Models for HBT Grid Amplifiers

A 16-element heterojunction bipolar transistor (HBT) grid amplifier has been fabricated with a peak gain of 11 dB at 9.9 GHz with a 3-dB bandwidth of 350 MHz. We report a gain analysis model for the grid and give a comparison of the measurement and theory. The measured patterns show the evidence of a common-mode oscillation. A stability model for the common-mode oscillation is developed. Based on the stability model, a lumped capacitor gives suitable phase shift of the circular function, thus stabilizing the grid. A second 18-element grid was fabricated, using this theory, with improved stability

A terahertz grid frequency doubler

We present a 144-element terahertz quasi-optical grid frequency doubler. The grid is a planar structure with bow-tie antennas as a unit cell, each loaded with a planar Schottky diode. The maximum output power measured for this grid is 24 mW at 1 THz for 3.1-μs 500-GHz input pulses with a peak input power of 47 W. An efficiency of 0.17% for an input power of 6.3 W and output power of 10.8 mW is measured. To date, this is the largest recorded output power for a multiplier at terahertz frequencies. Input and output tuning curves are presented and an output pattern is measured and compared to theory

Modeling and performance of a 100-element pHEMT grid amplifier

A 100-element hybrid grid amplifier has been fabricated, The active devices in the grid are custom-made pseudomorphic high electron mobility transistor (pHEMT) differential-pair chips. We present a model for gain analysis and compare measurements with theory. The grid includes stabilizing resistors in the gate. Measurements show the grid has a peak gain of 10 db when tuned for 10 GHz and a gain of 12 dB when tuned for 9 GHz. The maximum 3-dB bandwidth is 15% at 9 GHz. The minimum noise figure is 3 dB. The maximum saturated output power is 3.7 W, with a peak power-added efficiency of 12%. These results area significant improvement over previous grid amplifiers based on heterojunction bipolar transistors (HBT's)

Single-Chip T/R Module for 1.2 GHz

A single-chip CMOS-based (complementary-metal-oxide-semiconductorbased) transmit/receive (T/R) module is being developed for L-band radar systems. Previous T/R module implementations required multiple chips employing different technologies (GaAs, Si, and others) combined with off-chip transmission lines and discrete components including circulators. The new design eliminates the bulky circulator, significantly reducing the size and mass of the T/R module. Compared to multi-chip designs, the single-chip CMOS can be implemented with lower cost. These innovations enable cost-effective realization of advanced phased array and synthetic aperture radar systems that require integration of thousands of T/R modules. The circulator is a ferromagnetic device that directs the flow of the RF (radio frequency) power during transmission and reception. During transmission, the circulator delivers the transmitted power from the amplifier to the antenna, while preventing it from damaging the sensitive receiver circuitry. During reception, the circulator directs the energy from the antenna to the low-noise amplifier (LNA) while isolating the output of the power amplifier (PA). In principle, a circulator could be replaced by series transistors acting as electronic switches. However, in practice, the integration of conventional series transistors into a T/R chip introduces significant losses and noise. The prototype single-chip T/R module contains integrated transistor switches, but not connected in series; instead, they are connected in a shunt configuration with resonant circuits (see figure). The shunt/resonant circuit topology not only reduces the losses associated with conventional semiconductor switches but also provides beneficial transformation of impedances for the PA and the LNA. It provides full singlepole/ double-throw switching for the antenna, isolating the LNA from the transmitted signal and isolating the PA from the received signal. During reception, the voltage on control line RX/TX (raised bar) is high, causing the field-effect transistor (FET) switch S1 to be closed, forming a parallel resonant tank circuit L1||C1. This circuit presents high impedance to the left of the antenna, so that the received signal is coupled to the LNA. At the same time, FET switches S2 and S3 are open, so that C2 is removed from the circuit (except for a small parasitic capacitance). The combination of L2 and C3 forms a matching network that transforms the antenna impedance of 50 ohms to a higher value from the perspective of the LNA input terminal. This transformation of impedance improves LNA noise figure by increasing the received voltage delivered to the input transistor. This allows lower transconductance and therefore a smaller transistor, which makes it possible to design the CMOS LNA for low power consumption. During transmission, the voltage on control line RX/TX (raised bar) is low, causing switch S1 to be open. In this configuration, the combination of L1 and C1 transforms the antenna impedance to a lower value from the perspective of the PA. This low impedance is helpful in producing a relatively high output power compatible with the low CMOS operating potential. At the same time, switches S2 and S3 are closed, forming the parallel resonant tank circuit L2||C2. This circuit presents high impedance to the right of the antenna, directing the PA output signal to the antenna and away from the LNA. During this time, S3 presents a short circuit across the LNA input terminals to guarantee that the voltage seen by the LNA is small enough to prevent damage