11 research outputs found

    Quenching of metal sticking by photo-oxidation of an amorphous semiconductor:Zn on GeS2

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    The sticking probability of Zn on amorphous GeS2 is greatly reduced when the UHV-prepared semiconductor film is photo-oxidized in the presence of band-gap radiation. The phenomena underlying this interesting effect have been elucidated in a kinetic and structural study using electron spectroscopy and x-ray-absorption spectroscopy. Selective photo-oxidation of Ge sites strongly suppresses the formation of Ge-Zn bonds at the interface: these act as nucleation sites for the growing metal film. A consistent picture emerges that also accounts for the very different behavior encountered during deposition of Ag films with and without photo-oxidation in the closely related Ag/GeS2 system.</p

    The effect of photo-oxidation on the sticking and reactivity of Ag on amorphous GeS<sub>2</sub>

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    Photo-oxidation of amorphous GeS2 films illuminated by band-gap radiation drastically alters the growth mode and reactivity of subsequently deposited Ag. In the former case (monolayer/simultaneous multilayer growth) the Ag reacts with both Ge and S sites. In the latter case (Stranski-Krastanov growth) Ge sites are selectively oxidized and film growth proceeds by Ag nucleation at the unoxidized S sites. The behaviour is very different from that reported earlier for Zn deposition on GeS2, where photo-oxidation results in very large changes in metal sticking probability. XPS, XAES and EXAFS data provide the basis for understanding both this phenomenon and the very different photodiffusion behaviour of Zn and Ag in GeS2.</p
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