Multiloop Integrand Reduction for Dimensionally Regulated Amplitudes

We present the integrand reduction via multivariate polynomial division as a natural technique to encode the unitarity conditions of Feynman amplitudes. We derive a recursive formula for the integrand reduction, valid for arbitrary dimensionally regulated loop integrals with any number of loops and external legs, which can be used to obtain the decomposition of any integrand analytically with a finite number of algebraic operations. The general results are illustrated by applications to two-loop Feynman diagrams in QED and QCD, showing that the proposed reduction algorithm can also be seamlessly applied to integrands with denominators appearing with arbitrary powers.Comment: Published version. 5 pages, 2 figure

FormCalc 8: Better Algebra and Vectorization

We present Version 8 of the Feynman-diagram calculator FormCalc. New features include in particular significantly improved algebraic simplification as well as vectorization of the generated code. The Cuba Library, used in FormCalc, features checkpointing to disk for all integration algorithms.Comment: 7 pages, LaTeX, proceedings contribution to ACAT 2013, Beijing, China, 16-21 May 201

Generalised Unitarity for Dimensionally Regulated Amplitudes

We present a novel set of Feynman rules and generalised unitarity cut-conditions for computing one-loop amplitudes via d-dimensional integrand reduction algorithm. Our algorithm is suited for analytic as well as numerical result, because all ingredients turn out to have a four-dimensional representation. We will apply this formalism to NLO QCD corrections.Comment: Presented at SILAFAE 2014, 24-28 Nov, Ruta N, Medellin, Colombi

The Integrand Reduction of One- and Two-Loop Scattering Amplitudes

The integrand-level methods for the reduction of scattering amplitudes are well-established techniques, which have already proven their effectiveness in several applications at one-loop. In addition to the automation and refinement of tools for one-loop calculations, during the past year we observed very interesting progress in developing new techniques for amplitudes at two- and higher-loops, based on similar principles. In this presentation, we review the main features of integrand-level approaches with a particular focus on algebraic techniques, such as Laurent series expansion which we used to improve the one-loop reduction, and multivariate polynomial division which unveils the structure of multi-loop amplitudes.Comment: 7 pages, v2: fixed typos, added references. Presented at "Loops and Legs in Quantum Field Theory", Wernigerode, Germany, 15-20 April 201

Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition

Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (V$_o$) were identified in ZnO nanorods (NRs) grown by low cost chemical bath deposition. A transient behaviour in the photoluminescence (PL) intensity of the two V$_o$ states was found to be sensitive to the ambient environment and to NR post-growth treatment. The largest transient was found in samples dried on a hot plate with a PL intensity decay time, in air only, of 23 and 80 s for the 2.25 and 2.03 eV peaks, respectively. Resistance measurements under UV exposure exhibited a transient behaviour in full agreement with the PL transient indicating a clear role of atmospheric O$_2$ on the surface defect states. A model for surface defect transient behaviour due to band bending with respect to the Fermi level is proposed. The results have implications for a variety of sensing and photovoltaic applications of ZnO NRs

Influence of interface potential on the effective mass in Ge nanostructures

The role of the interface potential on the effective mass of charge carriers is elucidated in this work. We develop a new theoretical formalism using a spatially dependent effective mass that is related to the magnitude of the interface potential. Using this formalism we studied Ge quantum dots (QDs) formed by plasma enhanced chemical vapour deposition (PECVD) and co-sputtering (sputter). These samples allowed us to isolate important consequences arising from differences in the interface potential. We found that for a higher interface potential, as in the case of PECVD QDs, there is a larger reduction in the effective mass, which increases the confinement energy with respect to the sputter sample. We further understood the action of O interface states by comparing our results with Ge QDs grown by molecular beam epitaxy. It is found that the O states can suppress the influence of the interface potential. From our theoretical formalism we determine the length scale over which the interface potential influences the effective mass

Semi-inclusive bottom-Higgs production at LHC: The complete one-loop electroweak effect in the MSSM

We present the first complete calculation of the one-loop electroweak effect in the process of semi-inclusive bottom-Higgs production at LHC in the MSSM. The size of the electroweak contribution depends on the choice of the final produced neutral Higgs boson, and can be relevant, in some range of the input parameters. A comparison of the one-loop results obtained in two different renormalization schemes is also performed, showing a very good NLO scheme independence. We further comment on two possible, simpler, approximations of the full NLO result, and on their reliabilty

Electroweak corrections to squark--anti-squark pair production at the LHC

We present the complete NLO electroweak contribution to the production of diagonal squark--anti-squark pairs in proton--proton collisions. We discuss their effects for the production of squarks different from top squarks, in the SPS1a' scenario.Comment: Talk given at IFAE 2008, Bologna, Italy, 26-28 March 200

NLO QCD corrections to the production of Higgs plus two jets at the LHC

We present the calculation of the NLO QCD corrections to the associated production of a Higgs boson and two jets, in the infinite top-mass limit. We discuss the technical details of the computation and we show the numerical impact of the radiative corrections on several observables at the LHC. The results are obtained by using a fully automated framework for fixed order NLO QCD calculations based on the interplay of the packages GoSam and Sherpa. The evaluation of the virtual corrections constitutes an application of the d-dimensional integrand-level reduction to theories with higher dimensional operators. We also present first results for the one-loop matrix elements of the partonic processes with a quark-pair in the final state, which enter the hadronic production of a Higgs boson together with three jets in the infinite top-mass approximation.Comment: 9 pages, 7 figures, references added, published in Phys.Lett.

Light harvesting with Ge quantum dots embedded in SiO2 and Si3N4

Cataloged from PDF version of article.Germanium quantum dots (QDs) embedded in SiO2 or in Si3N4 have been studied for light harvesting purposes. SiGeO or SiGeN thin films, produced by plasma enhanced chemical vapor deposition, have been annealed up to 850 degrees C to induce Ge QD precipitation in Si based matrices. By varying the Ge content, the QD diameter can be tuned in the 3-9 nm range in the SiO2 matrix, or in the 1-2 nm range in the Si3N4 matrix, as measured by transmission electron microscopy. Thus, Si3N4 matrix hosts Ge QDs at higher density and more closely spaced than SiO2 matrix. Raman spectroscopy revealed a higher threshold for amorphous-to-crystalline transition for Ge QDs embedded in Si3N4 matrix in comparison with those in the SiO2 host. Light absorption by Ge QDs is shown to be more effective in Si3N4 matrix, due to the optical bandgap (0.9-1.6 eV) being lower than in SiO2 matrix (1.2-2.2 eV). Significant photoresponse with a large measured internal quantum efficiency has been observed for Ge QDs in Si3N4 matrix when they are used as a sensitive layer in a photodetector device. These data will be presented and discussed, opening new routes for application of Ge QDs in light harvesting devices. (C) 2014 AIP Publishing LLC