An overview of knowledge sharing in new product development

This paper provides an overview of some of the issues in knowledge management related to the sharing of knowledge in new product development. Previous research and concepts reported by international researchers, and examples of the research projects carried out by the authors will be introduced. The paper first provides an overview of the history and importance of innovation and challenges in manufacturing. Then the importance of new product development in the sustainable success of manufacturing enterprises in the globalised business operations is discussed. The formalisation and modelling of product development processes will also be introduced. The concept and different definitions of knowledge management by previous researchers are then introduced, with further discussion on knowledge sharing. At this point, the authors’ research in knowledge sharing is also introduced. Finally, the trend of using social media and Enterprise 2 technologies in knowledge management and sharing is introduced using the recent research projects of the authors as examples

Patents and Industrialisation. An Historical Overview of the British Case, 1624-1907

A Report to the Strategic Advisory Board on Intellectual Property Policy (SABIP), U

The ways to deposit amorphous or nanocrystalline material from a vapor phase

International audienceThis paper deals with Chemical Vapor Deposition (CVD) and ALD (Atomic Layer Deposition) processes which lead to materials elaborated from a gaseous phase. These processes constitute an important technology in many applications fields such as microelectronics, energy, protective coating industry …. Once the target material is identified, to achieve specific film properties, efforts should be focused on the obtention of a particular film microstucture. The microstructure of the deposited layer is determined by the roles played by the growth phenomena and as a consequence, is strongly dependent on the choice of the process parameters (nature of chemical precursor, nature and structure of the substrate on which the material has to be deposited, temperature, total pressure, nature and partial pressures of the gaseous species)

Atomic layer deposition of tantalum oxide thin films for their use as diffusion barriers in microelectronic devices

International audienceAtomic Layer Deposition (ALD) was used for the deposition of tantalum oxide thin films in order to be integrated in microelectronic devices as barrier to copper diffusion. The influence of deposition temperature, number of cycles and precursor pulse time on the film growth was discussed. The conformity of thinnest deposited films was shown. Copper diffusion through ALD Ta2O5 thin films, 20 nm in thickness, was investigated, for three temperatures from 600 to 800 degrees C, using X-ray Photoelectron Spectroscopy. The failure of such films was detected after a thermal treatment at 700 degrees C. (C) 2009 Elsevier B.V. All rights reserved

Deposition of nanostructures by Atomic Layer Deposition

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Chemical Vapour Deposition processes of metallic amorphous or nanocrystalline thin films

International audienc