8 research outputs found
Strong Charge-Transfer Doping of 1 to 10 Layer Graphene by NO<sub>2</sub>
We use resonance Raman and optical reflection contrast methods to study charge transfer in 1–10 layer (1L–10L) thick graphene samples on which NO<sub>2</sub> has adsorbed. Electrons transfer from the graphene to NO<sub>2</sub>, leaving the graphene layers doped with mobile delocalized holes. Doping follows a Langmuir-type isotherm as a function of NO<sub>2</sub> pressure. Raman and optical contrast spectra provide independent, self-consistent measures of the hole density and distribution as a function of the number of layers (<i>N</i>). At high doping, as the Fermi level shift <i>E</i><sub>F</sub> reaches half the laser photon energy, a resonance in the graphene G mode Raman intensity is observed. We observe a decrease of graphene optical absorption in the near-IR that is due to hole-doping. Highly doped graphene is more optically transparent and much more electrically conductive than intrinsic graphene. In thicker samples, holes are effectively confined near the surface, and in these samples, a small band gap opens near the surface. We discuss the properties and versatility of these highly charge-transfer-doped, few-layer-thick graphene samples as a new class of electronic materials
The Role of Photon Energy and Semiconductor Substrate in the Plasmon-Mediated Photooxidation of Citrate by Silver Nanoparticles
The plasmon-mediated photooxidation
of citrate ions adsorbed on
silver (Ag) nanoparticle–semiconductor electrodes is studied
in a photoelectrochemical cell. Consistent with previous reports,
a negative photovoltage and an anodic photocurrent arise from citrate
photooxidation under weak visible light illumination. We measure the
wavelength dependence of this reaction for three different types of
Ag nanoparticles and find that both the photovoltage and photocurrent
increase with photon energy over the visible spectral range. The electrode
photoresponse does not closely track the localized surface plasmon
resonance of the Ag nanoparticles. We also explore the role of the
semiconductor substrate in this reaction, and we find a similar electrode
photoresponse for several different substrates. The strong dependence
of reaction rate on photon energy is consistent with a hot-carrier
photochemical process where photoexcited hot holes generated in the
Ag nanoparticles are responsible for the oxidation of adsorbed citrate
Probing the Dynamics of the Metallic-to-Semiconducting Structural Phase Transformation in MoS<sub>2</sub> Crystals
We have investigated the phase transformation
of bulk MoS<sub>2</sub> crystals from the metastable metallic 1T/1T′
phase to the thermodynamically stable semiconducting 2H phase. The
metastable 1T/1T′ material was prepared by Li intercalation
and deintercalation. The thermally driven kinetics of the phase transformation
were studied with <i>in situ</i> Raman and optical reflection
spectroscopies and yield an activation energy of 400 ± 60 meV
(38 ± 6 kJ/mol). We calculate the expected minimum energy pathways
for these transformations using DFT methods. The experimental activation
energy corresponds approximately to the theoretical barrier for a
single formula unit, suggesting that nucleation of the phase transformation
is quite local. We also report that femtosecond laser writing converts
1T/1T′ to 2H in a single laser pass. The mechanisms for the
phase transformation are discussed
Observation of Excitonic Rydberg States in Monolayer MoS<sub>2</sub> and WS<sub>2</sub> by Photoluminescence Excitation Spectroscopy
We have identified excited exciton
states in monolayers of MoS<sub>2</sub> and WS<sub>2</sub> supported
on fused silica by means of
photoluminescence excitation spectroscopy. In monolayer WS<sub>2</sub>, the positions of the excited A exciton states imply an exciton
binding energy of 0.32 eV. In monolayer MoS<sub>2</sub>, excited exciton
transitions are observed at energies of 2.24 and 2.34 eV. Assigning
these states to the B exciton Rydberg series yields an exciton binding
energy of 0.44 eV
Physical Adsorption and Charge Transfer of Molecular Br<sub>2</sub> on Graphene
We present a detailed study of gaseous Br<sub>2</sub> adsorption and charge transfer on graphene, combining <i>in situ</i> Raman spectroscopy and density functional theory (DFT). When graphene is encapsulated by hexagonal boron nitride (h-BN) layers on both sides, in a h-BN/graphene/h-BN sandwich structure, it is protected from doping by strongly oxidizing Br<sub>2</sub>. Graphene supported on only one side by h-BN shows strong hole doping by adsorbed Br<sub>2</sub>. Using Raman spectroscopy, we determine the graphene charge density as a function of pressure. DFT calculations reveal the variation in charge transfer per adsorbed molecule as a function of coverage. The molecular adsorption isotherm (coverage <i>versus</i> pressure) is obtained by combining Raman spectra with DFT calculations. The Fowler–Guggenheim isotherm fits better than the Langmuir isotherm. The fitting yields the adsorption equilibrium constant (∼0.31 Torr<sup>–1</sup>) and repulsive lateral interaction (∼20 meV) between adsorbed Br<sub>2</sub> molecules. The Br<sub>2</sub> molecule binding energy is ∼0.35 eV. We estimate that at monolayer coverage each Br<sub>2</sub> molecule accepts 0.09 e<sup>–</sup> from single-layer graphene. If graphene is supported on SiO<sub>2</sub> instead of h-BN, a threshold pressure is observed for diffusion of Br<sub>2</sub> along the (somewhat rough) SiO<sub>2</sub>/graphene interface. At high pressure, graphene supported on SiO<sub>2</sub> is doped by adsorbed Br<sub>2</sub> on both sides
Controlled Electrochemical Intercalation of Graphene/<i>h-</i>BN van der Waals Heterostructures
Electrochemical intercalation
is a powerful method for tuning the
electronic properties of layered solids. In this work, we report an
electrochemical strategy to controllably intercalate lithium ions
into a series of van der Waals (vdW) heterostructures built by sandwiching
graphene between hexagonal boron nitride (<i>h</i>-BN).
We demonstrate that encapsulating graphene with <i>h</i>-BN eliminates parasitic surface side reactions while simultaneously
creating a new heterointerface that permits intercalation between
the atomically thin layers. To monitor the electrochemical process,
we employ the Hall effect to precisely monitor the intercalation reaction.
We also simultaneously probe the spectroscopic and electrical transport
properties of the resulting intercalation compounds at different stages
of intercalation. We achieve the highest carrier density >5 ×
10<sup>13</sup> cm<sup>2</sup> with mobility >10<sup>3</sup> cm<sup>2</sup>/(V s) in the most heavily intercalated samples, where Shubnikov–de
Haas quantum oscillations are observed at low temperatures. These
results set the stage for further studies that employ intercalation
in modifying properties of vdW heterostructures
Energy Transfer from Quantum Dots to Graphene and MoS<sub>2</sub>: The Role of Absorption and Screening in Two-Dimensional Materials
We report efficient nonradiative
energy transfer (NRET) from core–shell, semiconducting quantum
dots to adjacent two-dimensional sheets of graphene and MoS<sub>2</sub> of single- and few-layer thickness. We observe quenching of the
photoluminescence (PL) from individual quantum dots and enhanced PL
decay rates in time-resolved PL, corresponding to energy transfer
rates of 1–10 ns<sup>–1</sup>. Our measurements reveal
contrasting trends in the NRET rate from the quantum dot to the van
der Waals material as a function of thickness. The rate increases
significantly with increasing layer thickness of graphene, but decreases
with increasing thickness of MoS<sub>2</sub> layers. A classical electromagnetic
theory accounts for both the trends and absolute rates observed for
the NRET. The countervailing trends arise from the competition between
screening and absorption of the electric field of the quantum dot
dipole inside the acceptor layers. We extend our analysis to predict
the type of NRET behavior for the near-field coupling of a chromophore
to a range of semiconducting and metallic thin film materials
Ferromagnetic Ordering in Superatomic Solids
In order to realize
significant benefits from the assembly of solid-state
materials from molecular cluster superatomic building blocks, several
criteria must be met. Reproducible syntheses must reliably produce
macroscopic amounts of pure material; the cluster-assembled solids
must show properties that are more than simply averages of those of
the constituent subunits; and rational changes to the chemical structures
of the subunits must result in predictable changes in the collective
properties of the solid. In this report we show that we can meet these
requirements. Using a combination of magnetometry and muon spin relaxation
measurements, we demonstrate that crystallographically defined superatomic
solids assembled from molecular nickel telluride clusters and fullerenes
undergo a ferromagnetic phase transition at low temperatures. Moreover,
we show that when we modify the constituent superatoms, the cooperative
magnetic properties change in predictable ways