A tiny heart beating: Student-edited legal periodicals in good ol' Europe

This paper has a twofold aim: to analyze the possible opportunities disclosed by the observed growth of student- dited law reviews in Europe and to propose an innovative model of student participation to legal publication. The first part explores the phenomenon of student-edited law reviews in the U.S., focusing on its recognized educational benefits. Among others, it is observed that participation in student-edited law reviews might promote greater scholarly maturity among J.D. students, who might in turn be better equipped for a career in the academia after finishing law school, in comparison to their same-age European peers. Hence, there follows an examination of the possible beneficial repercussions that the establishment of student-edited law reviews may yield on the process of faculty education in (continental) Europe, in light of the general practice therein endorsed of academic “apprenticeship” under a mentor. Such benefits may consist, among others, in the enticement of larger numbers of potential academicians and in their possible greater intellectual maturity, providing new meaning to the aforementioned time-honored European practice. The second part of the paper focuses, instead, on the drawbacks brought about by excessive proliferation of student-edited law reviews in the U.S., such as alleged decrease in the quality of published scholarship as a consequence of the superficial quality control that student editors sometimes perform. In view of the foregoing, an innovative model of student publication is proposed, in order to prevent the onset of such drawbacks in Europe, while retaining the above-outlined benefits of early student involvement in academic discourse. It is suggested to complement few, authoritative sources of published scholarship in the form of peer-reviewed journals with student-edited working paper series which, if based on the guideline to provide substantial constructive feedback to authors, could ultimately help foster a quality improvement of published scholarship

On the time-dependent transport mechanism between surface traps and the 2DEG in AlGaN/GaN devices

The physical mechanisms involved in the trapping and de-trapping processes associated to surface donor traps in GaN transistors are discussed in this work. The paper challenges the conventional transient techniques adopted for extrapolating the trap energy level via experiments and TCAD simulations. Transient TCAD simulations were employed to reproduce the time-dependent electrical behavior of a Metal-on-Insulator Field-Effect-Transistor (MISFET) and explain the influence of the electric field and energy barrier on the transient time associated to the trapping and de-trapping mechanisms of surface traps. The comparison between three test-structures and the relative variation of the trapping and de-trapping times with the bias and trap parameters leads to the suggestion of a proposed test-structure and bias configuration to accurately extrapolate the energy level of surface traps in GaN transistors

What School Factors are Associated with the Success of Socio-Economically Disadvantaged Students? An Empirical Investigation Using PISA Data

Many school-level policies, such as school funding formulae and teacher allocation mechanisms, aim at reducing the influence of students’ low socio-economic condition on academic achievement. Benchmarks and indicators based on large-scale international assessments can be used to measure academic success and identify if and when disadvantaged students are successful. We build on such work and develop a new method for identifying a cross-country comparable metric of the academic success of socio-economically disadvantaged students using data from the Programme for International Student Assessment (PISA). We estimate the prevalence of successful disadvantaged students in 56 countries, as well as changes over time between 2006 and 2015. In addition, we focus on the PISA 2015 edition and explore school factors associated with the probability that disadvantaged students will be successful academically in a subsample of 18 countries. Findings reveal that successful disadvantaged students attend schools with a better disciplinary climate and that provide additional time for instruction in key subjects

What School Factors are Associated with the Success of Socio-Economically Disadvantaged Students? An Empirical Investigation Using PISA Data

Many school-level policies, such as school funding formulae and teacher allocation mechanisms, aim at reducing the influence of students’ low socio-economic condition on academic achievement. Benchmarks and indicators based on large-scale international assessments can be used to measure academic success and identify if and when disadvantaged students are successful. We build on such work and develop a new method for identifying a cross-country comparable metric of the academic success of socio-economically disadvantaged students using data from the Programme for International Student Assessment (PISA). We estimate the prevalence of successful disadvantaged students in 56 countries, as well as changes over time between 2006 and 2015. In addition, we focus on the PISA 2015 edition and explore school factors associated with the probability that disadvantaged students will be successful academically in a subsample of 18 countries. Findings reveal that successful disadvantaged students attend schools with a better disciplinary climate and that provide additional time for instruction in key subjects

High critical-current density and scaling of phase-slip processes in YBaCuO nanowires

YBaCuO nanowires were reproducibly fabricated down to widths of 50 nm. A Au/Ti cap layer on YBCO yielded high electrical performance up to temperatures above 80 K in single nanowires. Critical current density of tens of MA/cm2 at T = 4.2 K and of 10 MA/cm2 at 77 K were achieved that survive in high magnetic fields. Phase-slip processes were tuned by choosing the size of the nanochannels and the intensity of the applied external magnetic field. Data indicate that YBCO nanowires are rather attractive system for the fabrication of efficient sensors, supporting the notion of futuristic THz devices.Comment: 8 pages, 3 figures. Accepted for publication in Superconductor Science and Technolog

Diamond power devices: state of the art, modelling, figures of merit and future perspective

Abstract: With its remarkable electro-thermal properties such as the highest known thermal conductivity (~22 W cm−1∙K−1 at RT of any material, high hole mobility (>2000 cm2 V−1 s−1), high critical electric field (>10 MV cm−1), and large band gap (5.47 eV), diamond has overwhelming advantages over silicon and other wide bandgap semiconductors (WBGs) for ultra-high-voltage and high-temperature (HT) applications (>3 kV and >450 K, respectively). However, despite their tremendous potential, fabricated devices based on this material have not yet delivered the expected high performance. The main reason behind this is the absence of shallow donor and acceptor species. The second reason is the lack of consistent physical models and design approaches specific to diamond-based devices that could significantly accelerate their development. The third reason is that the best performances of diamond devices are expected only when the highest electric field in reverse bias can be achieved, something that has not been widely obtained yet. In this context, HT operation and unique device structures based on the two-dimensional hole gas (2DHG) formation represent two alternatives that could alleviate the issue of the incomplete ionization of dopant species. Nevertheless, ultra-HT operations and device parallelization could result in severe thermal management issues and affect the overall stability and long-term reliability. In addition, problems connected to the reproducibility and long-term stability of 2DHG-based devices still need to be resolved. This review paper aims at addressing these issues by providing the power device research community with a detailed set of physical models, device designs and challenges associated with all the aspects of the diamond power device value chain, from the definition of figures of merit, the material growth and processing conditions, to packaging solutions and targeted applications. Finally, the paper will conclude with suggestions on how to design power converters with diamond devices and will provide the roadmap of diamond device development for power electronics

Design of a normally-off diamond JFET for high power integrated applications

© 2017 Elsevier B.V. Normally-on (depletion mode) and normally-off (enhancement mode) diamond Junction Field Effect Transistors (JFETs) have been analyzed by means of a commercially available TCAD software. First, the parameters used for describing the incomplete ionization, avalanche, and mobility models in diamond have been discussed and assessed against the state-of-the-art. The on- and off-state electrical characteristics of diamond JFETs have been simulated with the suggested parameter values and matched with a set of available experimental data. Secondly, an optimization technique which can improve the performance of an enhancement mode diamond JFET that operates in the unipolar conduction regime has been proposed. This method takes into account the unique properties and limitations of diamond and highlights the main issues that can arise from the design of a normally-off diamond JFET. In particular, the crucial effect of the high temperature on the performance of the normally-off JFET has been investigated. The adopted technique is mainly based on a design of TCAD experiments and no mathematical algorithms have been developed for the calculation of the optimized set of parameters

Macroscopic quantum tunnelling in spin filter ferromagnetic Josephson junctions.

The interfacial coupling of two materials with different ordered phases, such as a superconductor (S) and a ferromagnet (F), is driving new fundamental physics and innovative applications. For example, the creation of spin-filter Josephson junctions and the demonstration of triplet supercurrents have suggested the potential of a dissipationless version of spintronics based on unconventional superconductivity. Here we demonstrate evidence for active quantum applications of S-F-S junctions, through the observation of macroscopic quantum tunnelling in Josephson junctions with GdN ferromagnetic insulator barriers. We show a clear transition from thermal to quantum regime at a crossover temperature of about 100 mK at zero magnetic field in junctions, which present clear signatures of unconventional superconductivity. Following previous demonstration of passive S-F-S phase shifters in a phase qubit, our result paves the way to the active use of spin filter Josephson systems in quantum hybrid circuits.We acknowledge financial support from COST Action MP1201 [NanoSC COST], by Progetto FIRB HybridNanoDev RBFR1236VV001 and by Regione Campania through POR Campania FSE 2007/2013, progetto MASTRI CUP B25B09000010007.This is the final version. It was first published by NPG at http://www.nature.com/ncomms/2015/150609/ncomms8376/full/ncomms8376.html#abstract