Difference of Oxide Hetero-Structure Junctions with Semiconductor Electronic Devices

Charge carrier injection performed in Pr0.7Ca0.3MnO3 (PCMO) hetero-structure junctions exhibits stable without electric fields and dramatic changes in both resistances and interface barriers, which are entirely different from behaviors of semiconductor devices. Disappearance and reversion of interface barriers suggest that the adjustable resistance switching of such hetero-structure oxide devices should associate with motion of charge carriers across interfaces. The results suggested that injected carriers should be still staying in devices and resulted in changes in properties, which guided to a carrier self-trapping and releasing picture in strongly correlated electronic framework. Observations in PCMO and oxygen deficient CeO2 devices show that oxides as functional materials could be used in microelectronics with some novel properties, in which interface is very important.Comment: 8 pages, 4 figure

Characteristics of hydrogen/oxygen isotopes in water masses and implications for spatial distribution of freshwater in the Amundsen Sea, Southern Ocean

Antarctica’s marginal seas are of great importance to atmosphere–ocean–ice interactions and are sensitive to global climate change. Multiple factors account for the freshwater budget in these regions, including glacier melting, seasonal formation/decay of sea ice, and precipitation. Hydrogen (H) and oxygen (O) isotopes represent useful proxies for determining the distribution and migration of water masses. We analyzed the H and O isotopic compositions of 190 seawater samples collected from the Amundsen Sea during the 34th Chinese Antarctic Research Expedition in 2017/2018. The upper-oceanic structure (3%) of freshwater generally lie in the upper ~50 m and extend from Antarctica to ~65°S in the meridional direction (anomalously low freshwater proportion occurred between 68°S and 71°S). Winter Water mainly occupied the layer between 50 and 150 m south of 71°S in the western Amundsen Sea. The water structure and spatial distribution of freshwater in the upper Amundsen Sea were found influenced mainly by the rates of basal and surficial melting of ice shelves, seasonal alternation of sea ice melt/formation, wind forcing, and regional bathymetry. Owing to the distance between heavy sea ice boundary (HSIB) and ice shelves is much shorter in the western HSIB than the east HSIB, the western part of the heavy sea ice boundary includes a higher proportion of freshwater than the eastern region. This study, which highlighted the distribution and extent of freshwater derived from ice (ice shelves and sea ice) melt, provides important evidence that the offshore drift pathway of cold and fresh Antarctic continental shelf water is likely interrupted by upwelled UCDW in the Amundsen Sea

The formation of a charge layer at the interface of GaMnAs and an organic material

The interface formed between the ferromagnetic semiconductor GaMnAs and the organic semiconductor N,N$^\prime$-diphenyl-N,N$^\prime$-bis(1-naphthyl)(1,1$^\prime$-biphenyl)-4,4$^\prime$-diamine (NPB) was investigated using current transport measurement and ultraviolet photoemission spectroscopy (UPS). The hole injection barrier at a GaMnAs and NPB interface was measured as 0.77 eV by modelling the measured current density-voltage (J-V) characteristics in a GaMnAs$/$NPB$/$Al structured device. The vacuum level shift at a GaMnAs$/$NPB interface was deduced to be 0.54 eV, indicating that a dipole layer exists at the interface. A UPS study gave a vacuum level shift of 0.53 eV and a band offset between the GaMnAs valence band and the highest occupied molecular orbital of NPB of 0.79 eV, in good agreement with the results of J-V measurements. We attribute the vacuum level shift to charge transfer across the interface