2,913 research outputs found
Renormalization-group improved predictions for Higgs boson production at large
We study the next-to-next-to-leading logarithmic order resummation for the
large Higgs boson production at the LHC in the framework of
soft-collinear effective theory. We find that the resummation effects reduce
the scale uncertainty significantly and decrease the QCD NLO results by about
in the large region. The finite top quark mass effects and the
effects of the NNLO singular terms are also discussed.Comment: 31 pages, 17 figures, version published in Phys.Rev.
Chaos-based wireless communication resisting multipath effects
This work is supported by NSFC (China) under Grants No. 61401354, No. 61172070, and No. 61502385; by the Innovative Research Team of Shaanxi Province under Grant No. 2013KCT-04; and by Key Basic Research Fund of Shaanxi Province under Grant No. 2016JQ6015.Peer reviewedPublisher PD
Poly[bis(μ-azido-κ2 N 1:N 1)[μ-1,2-bis(imidazol-1-yl)ethane-κ2 N 3:N 3′]cadmium]
In the title three-dimensional coordination polymer, [Cd(N3)2(C8H10N4)]n, the coordination geometry around the CdII atom is distorted octahedral. The CdII atom is coordinated by two N atoms from two cis-positioned bridging 1,2-bis(imidazol-1-yl)ethane (bime) ligands and four N atoms from four azide anions. Each azide ligand acts in an end-on bridging coordination mode. The azide ligands and CdII atoms form a one-dimensional zigzag chain constructed from four-membered [Cd(N3)2]n metallacycles extending along the a axis. These inorganic chains are connected with four other chains via bridging bime ligands to form a three-dimensional coordination network
Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate
Transition-metal dichalcogenide (TMD) semiconductors have been widely studied
due to their distinctive electronic and optical properties. The property of TMD
flakes is a function of its thickness, or layer number (N). How to determine N
of ultrathin TMDs materials is of primary importance for fundamental study and
practical applications. Raman mode intensity from substrates has been used to
identify N of intrinsic and defective multilayer graphenes up to N=100.
However, such analysis is not applicable for ultrathin TMD flakes due to the
lack of a unified complex refractive index () from monolayer to bulk
TMDs. Here, we discuss the N identification of TMD flakes on the SiO/Si
substrate by the intensity ratio between the Si peak from 100-nm (or 89-nm)
SiO/Si substrates underneath TMD flakes and that from bare SiO/Si
substrates. We assume the real part of of TMD flakes as that of
monolayer TMD and treat the imaginary part of as a fitting
parameter to fit the experimental intensity ratio. An empirical ,
namely, , of ultrathin MoS, WS and WSe
flakes from monolayer to multilayer is obtained for typical laser excitations
(2.54 eV, 2.34 eV, or 2.09 eV). The fitted of MoS has
been used to identify N of MoS flakes deposited on 302-nm SiO/Si
substrate, which agrees well with that determined from their shear and
layer-breathing modes. This technique by measuring Raman intensity from the
substrate can be extended to identify N of ultrathin 2D flakes with N-dependent
. For the application purpose, the intensity ratio excited by
specific laser excitations has been provided for MoS, WS and
WSe flakes and multilayer graphene flakes deposited on Si substrates
covered by 80-110 nm or 280-310 nm SiO layer.Comment: 10 pages, 4 figures. Accepted by Nanotechnolog
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