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3 research outputs found

Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots

Author: AY Liu
B Fluegel
Chunfang Cao
CY Jin
D Fan
DP Popescu
HY Liu
HY Liu
HY Liu
HY Liu
JG Keizer
Juanjuan Liu
M Tang
M Usman
MT Currie
NN Ledenstov
P Dawson
Peng Wang
Q Cao
Q Gong
Qian Gong
Shumin Wang
T Akatsu
T Kaizu
VV Mamutin
Wenwu Pan
WS Liu
X Mu
Xiaoyan Wu
Publication venue: 'Springer Science and Business Media LLC'
Publication date
Field of study

High-power, high repetition rate, short-pulse mode-locking using flared waveguide quantum-dot lasers at 1.3 /spl mu/m

Author: Kovsh AR
Krestnikov IL
Lau FK
Ledenstov NN
Livshits DA
Marinelli C
Mikhrin SS
Penty RV
Sellin RL
Thompson MG
White IH
Publication venue: 'Institute of Electrical and Electronics Engineers (IEEE)'
Publication date: 01/01/2005
Field of study

Ultra-short pulse, high power mode-locking is demonstrated in InGaAs quantum dot lasers using a flared waveguide design. 24GHz mode-locking with 790fs wide pulses and 500mW peak powers suitable for telecommunications applications are presented

CUED - Cambridge University Engineering Department

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices

Author: A Badolato
A Dousse
A Hartmann
CEC Wood
CF Wang
D Ebeling
E Pelucchi
G Costantini
H-J Butt
J Houel
J Marquez
J-Y Marzin
JM Gerard
JM Zajac
K Akimoto
K Fujiwara
K Hennessy
K Kuruma
K Nanbu
KA Serrels
KH Lee
L Chu
L Sapienza
M Davanço
M Gschrey
M Winger
N Chand
NN Ledenstov
O Gozzano
PD Siverns
PM Petroff
RZ Bachrach
S Kiravittaya
S Maier
SM Thon
T Kojima
V Mlinar
W-C Liu
XZ Liao
Publication venue: 'Springer Science and Business Media LLC'
Publication date
Field of study

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