Combined breakdown of a dielectric nanolayer to form a Josephson bridge

Electrical breakdown of a dielectric nanolayer between film electrodes under the combined action of direct current and capacitor discharge current makes it possible to form Josephson bridges with a reproducible resistance exceeding 1 {\Omega}. A new feature of the formation of a bridge during electrical breakdown, which is preceded by a series of preliminary breakdowns (auto breakdowns) of a dielectric nanolayer, has been discovered. The mechanism of the process and the role of the thickness of the cathode film in the formation of the bridge are discussed.Comment: 10 pages, 4 figure

Electrical breakdown of a dielectric for the formation of a superconducting nanocontact

Electrical breakdown of the dielectric nanolayer between film electrodes of niobium and an alloy of 50% indium and 50% tin forms a bridge of this alloy between the electrodes. The bridge resistance depends on the breakdown current. The length of the bridge is equal to the thickness of the dielectric (30 nm), and its diameter is 25 nm. The calculated coherence length of the alloy at 0 K is close to the length of the bridge. The calculated critical current of a bridge with a resistance of 1 {\Omega} at a temperature of 0 K is 2 mA. It is concluded that such a bridge should have the properties of a Josephson contact at a temperature lower than the critical temperature of the alloy (6.5 K).Comment: 11 pages, 7 figure